TK35S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK35S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ unless otherwise specified) 25 4. Absolute Maximum Ratings (Note) (Ta = 25 Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Rating Unit VDSS 40 V VGSS ±20 (Note 1) ID 35 (Note 1) IDP 70 PD 58 W EAS 42 mJ IAR 35 A (Tc = 25) Single-pulse avalanche energy Symbol (Note 2) Avalanche current A Channel temperature (Note 3) Tch 175 Storage temperature (Note 3) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-02-02 Rev.3.0 TK35S04K3L 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Max Unit Rth(ch-c) 2.6 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = 25 V, Tch = 25 (initial), L = 36 µH, RG = 1 Ω, IAR = 35 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2012-02-02 Rev.3.0 TK35S04K3L 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage IGSS VGS = ±16 V, VDS = 0 V Min Typ. Max Unit ±10 µA IDSS VDS = 40 V, VGS = 0 V 10 V(BR)DSS ID = 10 mA, VGS = 0 V 40 V(BR)DSX V ID = 10 mA, VGS = -20 V 20 Vth VDS = 10 V, ID = 1 mA 2.0 3.0 RDS(ON) VGS = 6 V, ID = 17.5 A 11.0 15.0 VGS = 10 V, ID = 17.5 A 8.2 10.3 Min Typ. Max Unit 1370 pF Gate threshold voltage Drain-source on-resistance Test Condition mΩ unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss 180 Output capacitance Coss 320 Switching time (rise time) tr 9 Switching time (turn-on time) ton 19 tf 12 toff 35 Min Typ. Max Unit 28 nC Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1. ns Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Symbol Test Condition VDD ≈ 32 V, VGS = 10 V, ID = 35 A Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs 18 Gate-drain charge Qgd 10 unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Symbol Test Condition Min Typ. Max Unit A Reverse drain current (DC) (Note 4) IDR 35 Reverse drain current (pulsed) (Note 4) IDRP 70 Diode forward voltage VDSF IDR = 35 A, VGS = 0 V -1.2 V Reverse recovery time trr 35 ns Qrr IDR = 35 A, VGS = 0 V -dIDR/dt = 50 A/µs Reverse recovery charge 17 nC Note 4: Ensure that the channel temperature does not exceed 175. 3 2012-02-02 Rev.3.0 TK35S04K3L 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2012-02-02 Rev.3.0 TK35S04K3L 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2012-02-02 Rev.3.0 TK35S04K3L Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Tc (Guaranteed Maximum) 6 2012-02-02 Rev.3.0 TK35S04K3L Fig. 8.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.13 Safe Operating Area (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.15 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2012-02-02 Rev.3.0 TK35S04K3L Package Dimensions Unit: mm Weight: 0.36 g (typ.) Package Name(s) TOSHIBA: 2-7M1A Nickname: DPAK+ 8 2012-02-02 Rev.3.0 TK35S04K3L RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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