TOSHIBA TK50F15J1

TK50F15J1
MOSFETs
Silicon N-Channel MOS (U-MOS-H)
TK50F15J1
1. Applications
•
Switching Voltage Regulators
•
DC-DC Converters
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)
(3)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-220SM(W)
 unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
(Note 1)
Drain current (pulsed)
Power dissipation
(Note 1)
(Tc = 25)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Symbol
Rating
Unit
VDSS
150
V
VGSS
±20
ID
50
A
IDP
150
PD
300
W
EAS
273
mJ
IAR
35
A

Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
Max
Unit
Rth(ch-c)
0.5
/W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = 50 V, Tch = 25 (initial), L = 33 µH, RG = 25 Ω, IAR = 35 A
Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
 unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
IDSS
VDS = 150 V, VGS = 0 V
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 4)
V(BR)DSS
ID = 10 mA, VGS = 0 V
V(BR)DSX
Min
Typ.
Max
Unit


±10
µA


10
150


ID = 10 mA, VGS = -20 V
95


Vth
VDS = 10 V, ID = 1 mA
2.0

4.0
RDS(ON)
VGS = 10 V, ID = 25 A

22
30
Gate threshold voltage
Drain-source on-resistance
Test Condition
V
mΩ
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
 unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min
Typ.
Max
Unit

4300

pF
Reverse transfer capacitance
Crss

210

Output capacitance
Coss

640

Switching time (rise time)
tr

7

Switching time (turn-on time)
ton

30

tf

15

toff

85

Min
Typ.
Max
Unit

75

nC
Switching time (fall time)
Switching time (turn-off time)
See Fig. 6.2.1
ns
Fig. 6.2.1 Switching Time Test Circuit
 unless otherwise specified)
25
6.3. Gate Charge Characteristics (Ta = 25
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Qg
Test Condition
VDD ≈ 120 V, VGS = 10 V, ID = 50 A
Gate-source charge
Qgs

50

Gate-drain charge
Qgd

25

 unless otherwise specified)
6.4. Source-Drain Characteristics (Ta = 25
25
Characteristics
Reverse drain current (DC)
(Note 5)
Reverse drain current (pulsed)
(Note 5)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR



50
A



150
Diode forward voltage
VDSF
IDRP
IDR = 50 A, VGS = 0 V


-1.5
V
Reverse recovery time
trr

95

ns
Reverse recovery charge
Qrr
IDR = 50 A, VGS = 0 V
-dIDR/dt = 100 A/µs

450

nC
Note 5: Ensure that the channel temperature does not exceed 175.
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7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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8. Moisture-Proof Packing
This device is packed in a moisture-proof laminated aluminum bag.
8.1. Precautions for Transportation and Storage (Note)
(1)
Avoid excessive vibration during transportation.
(2)
Do not toss or drop the packed devices to avoid ripping of the bag.
(3)
After opening the moisture-proof bag, the devices should be assembled within two weeks in an
(4)
The moisture-proof bag may be stored unopened for up to 24 months at 5 to 30 and RH90% or below.
(5)
If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the
environment of 5 to 30 and RH70% or below. Perform reflow at most twice.
30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as
follows:
Note:
Baking conditions: 125 for 48 hours.
Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum
magazines when baking.
The humidity indicator shows an approximate ambient humidity at 25.
If the ambient humidity is below 30%, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30% dot has changed from blue to pink, the
devices should be baked before assembly.
Fig. 8.1.1 Humidity Indicator
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9. Characteristics Curves (Note)
Fig. 9.1 ID - VDS
Fig. 9.2 ID - VDS
Fig. 9.3 ID - VGS
Fig. 9.4 VDS - VGS
Fig. 9.5 RDS(ON) - ID
Fig. 9.6 RDS(ON) - Ta
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Fig. 9.7 IDR - VDS
Fig. 9.8 Capacitance - VDS
Fig. 9.9 Vth - Ta
Fig. 9.10 Dynamic Input/Output Characteristics
Fig. 9.11 PD - Tc
(Guaranteed Maximum)
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Fig. 9.12 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 9.13 Safe Operating Area
(Guaranteed Maximum)
Fig. 9.14 EAS - Tch
(Guaranteed Maximum)
Fig. 9.15 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 1.07 g (typ.)
Package Name(s)
TOSHIBA: 2-10W1S
Nickname: TO-220SM(W)
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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