TLN110(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead(Pb)-Free Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. • TPS703(F) PIN photodiode with resin to screen out visible light available as detector for remote control Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta > 25°C) Pulse forward current Symbol Rating Unit IF 100 mA ΔIF / °C −1.33 mA / °C 1 A IFP (Note 1) Reverse voltage VR 5 V Power dissipation PD 150 mW Operating temperature range Topr −20~75 °C TOSHIBA Storage temperature range Tstg −30~100 °C Weight: 0.32 g (typ.) 4−6C4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Pin Connection reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the 1. Anode 1 2 absolute maximum ratings. 2. Cathode Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≤ 100μs, repetitive frequency = 100 Hz Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 100mA ― 1.35 1.5 V Reverse current IR VR = 5V ― ― 10 μA Radiant intensity IE IF = 50mA 15 30 ― mW / sr Radiant power PO IF = 50mA ― 9 ― mW Capacitance CT VR = 0, f = 1MHz ― 20 ― pF Peak emission wavelength λP IF = 50mA ― 940 ― nm Spectral line half width Δλ IF = 50mA ― 45 ― nm 1 θ 2 IF = 50mA ― ±8 ― ° Half value angle 1 2007-10-01 TLN110(F) Precautions Please be careful of the followings. 1. Soldering temperature : 260°C max Soldering time : 5s max (Soldering must be performed under the stopper.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110(F) IFP – VFP 1000 100 500 (typ.) 300 80 Pulse forward current IFP (mA) Allowable forward current IF (mA) IF – Ta 120 60 40 20 0 0 20 40 60 100 80 120 140 Ambient temperature Ta (°C) 100 50 30 10 5 Pulse width ≦100μs Repetitive Frequency = 100Hz Ta = 25°C 3 IF – V F 100 (typ.) 1 1.0 Ta = 25°C 1.2 1.4 (mA) 1.8 2.0 2.2 2.4 2.6 Pulse forward voltage VFP (V) 50 Forward current IF 1.6 30 10 5 3 1 0.8 IE – IF 0.9 1.0 1.1 1.2 1.3 Forward voltage VF 1.4 (typ.) 1000 1.5 Pulse width ≦ 100μs Repetitive 500 Frequency = 100Hz 300 Ta = 25°C (V) (mW / sr) 100 ΔVF / ΔTa – IF Radiant intensity IE Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) -2.4 -2.0 -1.6 50 30 10 5 3 1 -1.2 0.5 -0.8 -0.4 0.3 1 3 10 30 0.1 1 100 Forward current IF (mA) 3 10 30 100 300 1000 Forward current IF (mA) 3 2007-10-01 TLN110(F) Wavelength Characteristic 1.0 (typ.) Relative IE – Ta (typ.) 10 IF = 50mA Ta = 25°C 5 Relative radiant intensity Relative intensity 0.8 0.6 0.4 3 1 0.2 0.5 0 880 900 940 920 980 960 0.3 1000 Wavelength λ (nm) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Distance Characteristics (near distance) 100 1000 20° 0° 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° IE = 20mW / sr 10 100 IE = 10mW / sr 1 10 80° 80° 90° 0 0.4 0.2 0.6 0.8 90° 1.0 Relative intensity Converted radiant incidence E (Ta = 25°C) (mW / cm2) (typ.) TPS703(F) short circuit current ISC (μA) Radiation Pattern 0.1 1 1 10 100 Distance d (mm) IFP – PW 3000 Allowable pulse forward current IFP (mA) Ta = 25°C 1000 500 f = 100Hz 300 100 10kHz 2kHz 5kHz 50 500Hz 1kHz 200Hz 30 10 3μ 10μ 30μ 100μ Pulse width 300μ PW 1m 3m 10m (s) 4 2007-10-01 TLN110(F) Distance Characteristics (long distance) 100 1000 IEP = 200mW / sr at IFP ~300mA, f = 100Hz, PW = 100μs 10 0.1 1 0.01 0.1 (mW / cm2) 1 10 Converted radiant incidence E TPS703(F) short circuit current ISC (μA) 100 0.001 0.01 IE = 20mW / sr at IF ~50mA 0.001 0.01 0.0001 0.1 1 10 Distance d (m) 5 2007-10-01 TLN110(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01