TI TMS27C020-20JE

TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
D
D
D
30
4
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
4
A17
VCC
PGM
TMS27PC020
FM PACKAGE
( TOP VIEW )
3 2 1 32 31 30
A7
5
29
A14
A6
6
28
A13
A5
7
27
A8
A4
8
26
A9
A3
9
25
A11
A2
10
24
G
A1
11
23
A10
A0
12
22
E
DQ0
13
21
DQ7
14 15 16 17 18 19 20
The TMS27C020 series are 262 144 by 8-bit
(2 097 152-bit), ultraviolet (UV) light erasable,
electrically programmable read-only memories
(EPROMs).
The TMS27PC020 series are one-time programmable (OTP) electrically programmable read-only
memories (PROMs).
DQ1
description
DQ6
D
3
VCC
PGM
A17
A14
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
DQ5
D
D
D
31
DQ4
D
32
2
A16
VPP
D
’27C/ PC020-10
100 ns
’27C/ PC020-12
120 ns
’27C/ PC020-15
150 ns
’27C/ PC020-20
200 ns
’27C/ PC020-25
250 ns
8-Bit Output For Use in
Microprocessor-Based Systems
Very High-Speed SNAP! Pulse
Programming
Power Saving CMOS Technology
3-State Output Buffers
400 mV Minimum DC Noise Immunity With
Standard TTL Loads
Latchup Immunity of 250 mA on All Input
and Output Pins
No Pullup Resistors Required
Low Power Dissipation (VCC = 5.5 V)
– Active . . . 165 mW Worst Case
– Standby . . . 0.55 mW Worst Case
(CMOS-Input Levels)
Temperature Range Options
1
GND
DQ3
D
D
D
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
A12
A15
D
J PACKAGE
( TOP VIEW )
Organization . . . 262 144 by 8 Bits
Single 5-V Power Supply
Operationally Compatible With Existing
Megabit EPROMs
Industry Standard 32-Pin Dual-In-line
Package and 32-Lead Plastic Leaded Chip
Carrier
All Inputs / Outputs Fully TTL Compatible
±10% VCC Tolerance
Max Access / Min Cycle Time
VCC ± 10%
DQ2
D
D
D
PIN NOMENCLATURE
A0 – A17
DQ0 – DQ7
E
G
GND
PGM
VCC
VPP
Address Inputs
Inputs (programming) / Outputs
Chip Enable
Output Enable
Ground
Program
5-V Power Supply
13-V Power Supply †
† Only in program mode
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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1
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
description (continued)
These devices are fabricated using power-saving CMOS technology for high speed and simple interface with
MOS and bipolar circuits. All inputs ( including program data inputs) can be driven by Series 74 TTL circuits
without the use of external pullup resistors. Each output can drive one Series 74 TTL circuit without external
resistors.
The TMS27C020 EPROM is offered in a dual-in-line ceramic package (J suffix) designed for insertion in
mounting hole rows on 15,2-mm (600-mil) centers. The TMS27C020 is also offered with two choices of
temperature ranges of 0° to 70°C (JL suffix) and – 40°C to 85°C (JE suffix). See Table 1.
The TMS27PC020 is offered in a 32-lead plastic leaded chip carrier using 1,25 mm (50 mil) lead spacing
( FM suffix). The TMS27PC020 is offered with two choices of temperature ranges of 0°C to 70°C (FML suffix)
and – 40°C to 85°C (FME suffix). See Table 1.
Table 1. Temperature Range Suffixes
SUFFIX FOR OPERATING
TEMPERATURE RANGES
FUNCTION
0°C TO 70°C
– 40 °C TO 85°C
TMS27C040-XXX
JL
JE
TMS27PC040-XXX
FML
FME
These EPROMs operate from a single 5-V supply ( in the read mode), they are ideal for use in
microprocessor-based systems. One other (13 V) supply is needed for programming. All programming signals
are TTL level. For programming outside the system, existing EPROM programmers can be used.
operation
The seven modes of operation for the TMS27C020 and TMS27PC020 are listed in Table 2. The read mode
requires a single 5-V supply. All inputs are TTL level except for VPP during programming (13 V), and VH (12 V) on
A9 for the signature mode.
Table 2. Operation Modes
MODE†
FUNCTION
READ
OUTPUT
DISABLE
STANDBY
PROGRAMMING
VERIFY
PROGRAM
INHIBIT
SIGNATURE MODE
G
VIL
VIL
VIL
VIH
VIH
X
VIL
VIH
VIL
VIL
VIH
X
VIL
VIL
PGM
X
X
X
X
X
VCC
X
VCC
VCC
VCC
VCC
VIH
VPP
X
VPP
VCC
A9
VIL
VPP
X
VCC
X
VPP
VCC
X
VCC
VCC
X
VCC
X
A0
X
X
X
X
X
X
E
VH‡
VIL
VH‡
VIH
CODE
DQ0 – DQ7
Data Out
Hi-Z
Hi-Z
Data In
Data Out
† X can be VIL or VIH
‡ VH = 12 V ± 0.5 V
2
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Hi-Z
MFG
DEVICE
97
32
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
read/ output disable
When the outputs of two or more TMS27C020s or TMS27PC020s are connected in parallel on the same bus,
the output of any particular device in the circuit can be read with no interference from competing outputs of the
other devices. To read the output of a single device, a low level signal is applied to the E and G pins. All other
devices in the circuit should have their outputs disabled by applying a high level signal to one of these pins.
latchup immunity
Latchup immunity on the TMS27C020 and TMS72PC020 is a minimum of 250 mA on all inputs and outputs.
This feature provides latchup immunity beyond any potential transients at the P.C. board level when the EPROM
is interfaced to industry standard TTL or MOS logic devices. The input / output layout approach controls latchup
without compromising performance or packing density.
power down
Active ICC supply current can be reduced from 30 mA to 500 µA by applying a high TTL input on E and to
100 µA by applying a high CMOS input on E. In this mode all outputs are in the high-impedance state.
erasure
Before programming, the TMS27C020 is erased by exposing the chip through the transparent lid to a high
intensity ultraviolet light (wavelength 2537 Å). The recommended minimum exposure dose
(UV intensity × exposure time) is 15-W⋅s / cm2. A typical 12-mW / cm2, filterless UV lamp erases the device in
21 minutes. The lamp should be located about 2.5 cm above the chip during erasure. After erasure, all bits are
in the high state. It should be noted that normal ambient light contains the correct wavelength for erasure.
Therefore, when using the TMS27C020, the window should be covered with an opaque label. After erasure (all
bits in logic high state), logic lows are programmed into the desired locations. A programmed low can be erased
only by ultraviolet light.
SNAP! Pulse programming
The TMS27C020 and TMS27PC020 are programmed using the TI SNAP! Pulse programming algorithm,
illustrated by the flowchart in Figure 1, which programs in a nominal time of twenty-six seconds. Actual
programming time varies as a function of the programmer used.
The SNAP! Pulse programming algorithm uses an initial pulse of 100 microseconds (µs) followed by a byte
verification to determine when the addressed byte has been successfully programmed. Up to ten 100-µs pulses
per byte are provided before a failure is recognized.
The programming mode is achieved when VPP equals 13 V, VCC = 6.5 V, E = VIL, G = VIH. Data is presented
in parallel (eight bits) on pins DQ0 through DQ7. Once addresses and data are stable, PGM is pulsed low.
More than one device can be programmed when the devices are connected in parallel. Locations can be
programmed in any order. When the SNAP! Pulse programming routine is complete, all bits are verified with
VCC = VPP = 5 V ± 10%.
program inhibit
Programming can be inhibited by maintaining a high level input on the E or PGM pins.
program verify
Programmed bits can be verified with VPP equals 13 V when G = VIL, E = VIL, and PGM = VIH.
signature mode
The signature mode provides access to a binary code identifying the manufacturer and type. This mode is
activated when A9 (pin 26) is forced to 12 V. Two identifier bytes are accessed by toggling A0. All other
addresses must be held low. The signature code for the TMS27C020 is 9732. A0 low selects the manufacturer’s
code 97 ( Hex), and A0 high selects the device code 32 ( Hex), as shown in Table 3.
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3
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
signature mode (continued)
Table 3. Signature Mode
IDENTIFIER†
A0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
HEX
VIL
VIH
1
0
0
1
0
1
1
1
97
DEVICE CODE
0
0
1
1
† E = G = VIL, A1 – A8 = VIL, A9 = VH, A10 – A17 = VIL, VPP = VCC.
0
0
1
0
32
MANUFACTURER CODE
4
PINS
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
Start
Address = First Location
VCC = 6.5 V ± 0.25 V, VPP = 13 V ± 0.25 V
Program
Mode
Program One Pulse = tw = 100 µs
Last
Address?
Increment Address
No
Yes
Address = First Location
X=0
Program One Pulse = tw = 100 µs
No
Increment
Address
Verify
One Byte
Fail
X=X+1
X = 10?
Interactive
Mode
Pass
No
Last
Address?
Yes
Yes
VCC = VPP = 5 V ± 0.5 V
Compare
All Bytes
to Original
Data
Device Failed
Fail
Final
Verification
Pass
Device Passed
Figure 1. SNAP! Pulse Programming Flowchart
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
logic symbol†
EPROM 262 144 × 8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
E
12
11
10
9
8
7
6
5
27
26
23
25
4
28
29
3
2
30
22
0
A
24
13
14
15
17
18
19
20
21
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
17
[PWR DOWN]
&
G
0
262 143
A∇
A∇
A∇
A∇
A∇
A∇
A∇
A∇
EN
† This symbol is in accordance with ANSI / IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers are for the J package.
6
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)‡
Supply voltage range, VCC (see Note 1) : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to 7 V
Supply voltage range, VPP : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to 14 V
Input voltage range (see Note 1), All inputs except A9 : . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to VCC + 1 V
A9 : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to 13.5 V
Output voltage range, with respect to VSS (see Note 1) : . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to VCC + 1 V
Operating free-air temperature range (’27C020-_ _ JL, ’27PC020_ _FML) : . . . . . . . . . . . . . . . . . 0°C to 70°C
Operating free-air temperature range (’27C020-_ _JE, ’27PC020-_ _FME) : . . . . . . . . . . . . . . . – 40°C to 85°C
Storage temperature range, Tstg : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
‡ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to GND.
recommended operating conditions
MIN
VCC
VPP
Read mode (see Note 2)
Supply voltage
SNAP! Pulse programming algorithm
Read mode
Supply voltage
SNAP! Pulse programming algorithm
NOM
MAX
UNIT
4.5
5
5.5
V
6.25
6.5
6.75
V
VCC + 0.6
13.25
V
VCC – 0.6
12.75
TTL
VCC
13
2
VCC + 0.5
VCC + 0.5
V
VIH
High level dc input voltage
High-level
VIL
Low level dc input voltage
Low-level
TA
Operating free-air temperature
’27C020-_ _JL,
’27PC020-_ _FML
0
70
°C
TA
Operating free-air temperature
’27C020-_ _JE,
’27PC020-_ _FME
– 40
85
°C
CMOS
TTL
VCC – 0.2
– 0.5
CMOS
0.8
– 0.5
GND + 0.2
V
V
NOTE 2: VCC must be applied before or at the same time as VPP and removed after or at the same time as VPP. The device must not be
inserted into or removed from the board when VPP or VCC is applied.
electrical characteristics over full ranges of operating conditions
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VOH
High level dc output voltage
High-level
IOH = – 20 µA
IOH = – 2 mA
VOL
Low level dc output voltage
Low-level
IOL = 2.1 mA
IOL = 20 µA
0.4
II
IO
Input current (leakage)
VI = 0 V to 5.5 V
VO = 0 V to VCC
±1
µA
Output current (leakage)
±1
µA
IPP1
IPP2
VPP supply current
VPP supply current (during program pulse)
VPP = VCC = 5.5 V
VPP = 13 V
10
µA
50
mA
ICC1
VCC supply current (standby)
ICC2
VCC supply current (active)
TTL-input level
CMOS-input level
VCC = 5.5 V, . . . E = VIH
VCC = 5.5 V,
E = VCC ± 0.2 V
VCC = 5.5 V,
E = VIL
tcycle = minimum cycle time,
outputs open†
VCC – 0.2
2.4
V
0.1
500
100
30
V
µA
mA
† Minimum cycle time = maximum access time.
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz†
PARAMETER
CI
NOM‡
MAX
f = 1 MHz
4
8
pF
f = 1 MHz
6
10
pF
TEST CONDITIONS
Input capacitance
VI = 0 V,
VO = 0 V,
CO
Output capacitance
† Capacitance measurements are made on sample basis only.
‡ All typical values are at TA = 25°C and nominal voltages.
MIN
UNIT
switching characteristics over full ranges of recommended operating conditions (see Notes 3
and 4)
PARAMETER
TEST
CONDITIONS
’27C020-10
’27PC020-10
MIN
MAX
’27C020-12
’27PC020-12
MIN
MAX
’27C020-15
’27PC020-15
MIN
MAX
27C020-20
27PC020-20
MIN
MAX
’27C020-25
’27PC020-25
MIN
UNIT
MAX
ta(A)
Access
time
from address
100
120
150
200
250
ns
ta(E)
Access
time
from chip enable
100
120
150
200
250
ns
ten(G)
Output enable
time from G
55
55
75
75
100
ns
tdis
Output disable
time from G or
E,
whichever
occurs first†
80
ns
tv(A)
Output data
valid time after
change of address, E, or G,
whichever occurs first§
CL = 100 pF,
1 Series 74
TTL load,
Input tr ≤ 20 ns,
Input tf ≤ 20 ns
0
50
0
0
0
50
0
0
60
0
0
60
0
0
ns
§ Value calculated from 0.5-V delta to measured output level. This parameter is sampled and not 100% tested.
NOTES: 3. For all switching characteristics, the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high
and 0.8 V for logic low. (See Figure 2).
4. Common test conditions apply for tdis except during programming.
8
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
switching characteristics for programming: VCC = 6.5 V and VPP = 13 V (SNAP! Pulse), TA = 25°C
(see Note 3)
PARAMETER
tdis(G)
ten(G)
Output disable time from G
MIN
MAX
UNIT
0
100
ns
150
ns
Output enable time from G
NOTE 3: For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
0.8 V for logic low (See Figure 2).
timing requirements for programming
SNAP! Pulse programming algorithm
MIN
TYP
MAX
UNIT
95
100
105
µs
tw(PGM)
tsu(A)
Pulse duration, program
Setup time, address
2
µs
tsu(E)
tsu(G)
Setup time, E
2
µs
Setup time, G
2
µs
tsu(D)
tsu(VPP)
Setup time, data
2
µs
Setup time, VPP
2
µs
tsu(VCC)
th(A)
Setup time, VCC
2
µs
Hold time, address
0
µs
th(D)
Hold time, data
2
µs
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9
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
2.08 V
RL = 800 Ω
Output
Under Test
CL = 100 pF
(see Note A)
2.4 V
2V
0.8 V
0.4 V
2V
0.8 V
NOTES: A. CL includes probe and fixture capacitance.
B. The ac testing inputs are driven at 2.4 V for logic high and 0.4 V for logic low. Timing
measurements are made at 2 V for logic high and 0.8 V for logic low for both inputs
and outputs.
Figure 2. The ac Testing Output Load Circuit and Waveform
VIH
A0 – A17
Addresses Valid
VIL
ta(A)
VIH
E
VIL
ta(E)
VIH
G
ten(G)
VIL
tdis
tv(A)
VIH
DQ0 – DQ7
Output Valid
Hi-Z
Hi-Z
VIL
Figure 3. Read-Cycle Timing
10
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Verify
Program
A0 – A17
Address
N+1
Address Stable
tsu(A)
DQ0 – DQ7
VIH
VIL
th(A)
VIH / VOH
Data-Out
Valid
Data-In Stable
VIL / VOL
tdis(G)†
tsu(D)
VPP‡
VPP
VCC
tsu(VPP)
VCC‡
VCC
VCC
tsu(VCC)
VIH
E
VIL
th(D)
tsu(E)
VIH
PGM
VIL
tsu(G)
tw(PGM)
ten(G)†
VIH
G
VIL
† tdis(G) and ten(G) are characteristics of the device but must be accommodated by the programmer.
‡ 13-V VPP and 6.5-V VCC for SNAP! Pulse programming.
Figure 4. Program-Cycle Timing (SNAP! Pulse Programming)
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
FM (R-PQCC-J32)
PLASTIC J-LEADED CHIP CARRIER
Seating Plane
0.004 (0,10)
0.140 (3,56)
0.132 (3,35)
0.495 (12,57)
4
0.485 (12,32)
0.129 (3,28)
0.123 (3,12)
0.453 (11,51)
0.447 (11,35)
0.049 (1,24)
0.043 (1,09)
1
0.008 (0,20) NOM
30
29
5
0.020 (0,51)
0.015 (0,38)
0.595 (15,11)
0.585 (14,86)
0.553 (14,05)
0.547 (13,89)
0.030 (0,76)
TYP
21
13
14
20
0.050 (1,27)
4040201-4 / B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-016
12
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
J (R-CDIP-T**)
CERAMIC SIDE-BRAZE DUAL-IN-LINE PACKAGE
24 PIN SHOWN
B
13
24
C
12
1
Lens Protrusion
0.010 (0,25) MAX
0.065 (1,65)
0.045 (1,14)
0.090 (2,29)
0.060 (1,53)
0.018 (0,46) MIN
0.175 (4,45)
0.140 (3,56)
A
Seating Plane
0°– 10°
0.125 (3,18) MIN
0.022 (0,56)
0.014 (0,36)
0.100 (2,54)
A
B
C
28
24
PINS**
NARR
DIM
0.012 (0,30)
0.008 (0,20)
NARR
WIDE
32
WIDE
NARR
40
WIDE
NARR
WIDE
MAX
0.624(15,85) 0.624(15,85)
0.624(15,85) 0.624(15,85)
0.624(15,85) 0.624(15,85)
0.624(15,85) 0.624(15,85)
MIN
0.590(14,99) 0.590(14,99)
0.590(14,99) 0.590(14,99)
0.590(14,99) 0.590(14,99)
0.590(14,99) 0.590(14,99)
MAX
1.265(32,13) 1.265(32,13)
1.465(37,21) 1.465(37,21)
1.668(42,37) 1.668(42,37)
2.068(52,53) 2.068(52,53)
MIN
1.235(31,37) 1.235(31,37)
1.435(36,45) 1.435(36,45)
1.632(41,45) 1.632(41,45)
2.032(51,61) 2.032(51,61)
MAX
0.541(13,74) 0.598(15,19)
0.541(13,74) 0.598(15,19)
0.541(13,74) 0.598(15,19)
0.541(13,74) 0.598(15,19)
MIN
0.514(13,06) 0.571(14,50)
0.514(13,06) 0.571(14,50)
0.514(13,06) 0.571(14,50)
0.514(13,06) 0.571(14,50)
4040084 / B 04/95
NOTES: A.
B.
C.
D.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
This package can be hermetically sealed with a ceramic lid using glass frit.
Index point is provided on cap for terminal identification only on press ceramic glass frit seal only.
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
14
POST OFFICE BOX 1443
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