TPCF8108
MOSFETs
Silicon P-Channel MOS (U-MOS)
TPCF8108
1. Applications
•
Lithium-Ion Secondary Batteries
•
Power Management Switches
•
Notebook PCs
2. Features
(1)
Small footprint due to a small and thin package
(2)
Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = -4.5 V)
(3)
Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)
(4)
Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
5: Source
4: Gate
1, 2, 3, 6, 7, 8: Drain
VS-8
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Symbol
Rating
Unit
VDSS
-20
V
VGSS
±12
(Note 1)
ID
-7
A
(Note 1)
IDP
-28
Power dissipation
(t = 5 s)
(Note 2)
PD
2.5
Power dissipation
(t = 5 s)
(Note 3)
PD
0.7
W
(Note 4)
EAS
31.8
mJ
Single-pulse avalanche energy
W
Avalanche current
IAR
-7
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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TPCF8108
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 2)
Rth(ch-a)
50.0
/W
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 3)
Rth(ch-a)
178.5
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = -16 V, Tch = 25 (initial), L = 0.5 mH, RG = 25 Ω, IAR = -7 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Note:
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
This transistor is sensitive to electrostatic discharge and should be handled with care.
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TPCF8108
unless otherwise specified)
6. Electrical Characteristics (Ta = 25
25
6.1. Static Characteristics
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
µA
Gate leakage current
IGSS
VGS = ±12 V, VDS = 0 V
±0.1
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
-10
V(BR)DSS
ID = -10 mA, VGS = 0 V
-20
V(BR)DSX
ID = -10 mA, VGS = 8 V
-12
VDS = -10 V, ID = -0.5 mA
-0.5
-1.2
VGS = -1.8 V, ID = -1 A
45
95
VGS = -2.5 V, ID = -3.5 A
29
37
VGS = -4.5 V, ID = -3.5 A
21
26
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 5)
Gate threshold voltage
Vth
Drain-source on-resistance
RDS(ON)
V
mΩ
Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = -10 V, VGS = 0 V, f = 1 MHz
Min
Typ.
Max
Unit
1320
pF
Reverse transfer capacitance
Crss
180
Output capacitance
Coss
210
Switching time (rise time)
tr
8.6
Switching time (turn-on time)
ton
17
tf
42
toff
152
Min
Typ.
Max
Unit
19
nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Symbol
Total gate charge
(gate-source plus gate-drain)
Test Condition
VDD ≈ -16 V, VGS = -5 V, ID = -7 A
Qg
Gate-source charge 1
Qgs1
2.5
Gate-drain charge
Qgd
5.2
Min
Typ.
Max
Unit
6.4. Source-Drain Characteristics
Characteristics
Pulsed reverse drain current
Diode forward voltage
Symbol
(Note 6)
Test Condition
IDRP
-28
A
VDSF
IDR = -7 A, VGS = 0 V
1.2
V
Note 6: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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TPCF8108
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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TPCF8108
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
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TPCF8108
Fig. 8.12 rth - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TPCF8108
Package Dimensions
Unit: mm
Weight: 0.011 g (typ.)
Package Name(s)
TOSHIBA: 2-3U1S
Nickname: VS-8
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TPCF8108
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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