TI TPS53114

TPS53114
www.ti.com ..................................................................................................................................................................................................... SLVS887 – APRIL 2009
SINGLE SYNCHRONOUS STEP-DOWN CONTROLLER FOR LOW VOLTAGE POWER
RAILS
FEATURES
APPLICATIONS
• High Efficiency, Low-Power Consumption
• D-CAP2™ Mode Enables Fast Transient
Response
• No external parts required for loop
compensation
• Allows Ceramic Output Capacitor
• Integrated Enable Pin to Select POSCAP or
Ceramic Capacitor (MLCC) Use
• High Initial Reference Accuracy
• Low Output Ripple
• Wide Input Voltage Range: 4.5V to 24V
• Output Voltage Range: 0.76V to 5.5V
• Low-Side RDS(on) Loss-less Current Sensing
• Adaptive Gate Drivers with Integrated Boost
Diode
• Adjustable Soft Start
• Pre-Biased Soft Start
• Selectable Switching frequency
350kHz/700kHz
• Built-In 5V Linear Regulator
•
1
2
Point-of-load regulation in low power systems
for wide range of applications
– Digital TV Power Supply
– Networking Home Terminal
– Digital Set Top Box (STB)
– DVD player / recorder
– Gaming consoles and other
DESCRIPTION
The TPS53114 is a single, adaptive on-time
D-CAP2™ mode synchronous buck controller. The
part enables system designers to cost effectively
complete the suite of various end equipment's power
bus regulators with a low external component count
and low standby consumption. The main control loop
for the TPS53114 uses the D-CAP2™ mode topology
which provides a very fast transient response with no
external components. The TPS53114 also has a
PROPRIETARY circuit that enables the device to
adapt to not only low equivalent series resistance
(ESR) output capacitors such as POSCAP/SP-CAP,
but also ceramic using the CER pin. The part
provides convenient and efficient operation with
conversion voltages from 4.5V to 24V and output
voltage from 0.76V to 5.5V.
The TPS53114 is available in the 16 pin TSSOP
package, and is specified from –40°C to 85°C
temperature range.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
D-CAP2 is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS53114
SLVS887 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATION CIRCUIT
VIN
VO
1
R1
VBST
16
DRVH
15
SW
14
DRVL
13
PGND
12
TRIP
11
VREG5
10
TPS53114PWP
R2
2
VFB
3
SS
4
GND
C7
C3
C2
0.1 mF
Q1
10 mFx2
VO
(TSSOP16)
5
CER
6
FSEL
7
THERMAL
PAD
EN
V5FILT
Q2
C1
R3
C5
C6
8
L1
VIN
PGND
4.7 mF
VIN
9
C4
1 mF
PGND
SGND
ORDERING INFORMATION
TA
–40°C to 85°C
PACKAGE
ORDERING PART NUMBER
HTSSOP(Thermal
Pad)
TPS53114PWPR
PINS
16
TPS53114PWP
OUTPUT SUPPLY
ECO PLAN
Tape-and-Reel
Green
(RoHS & no Sb/Br)
Tube
ABSOLUTE MAXIMUM RATINGS
Operating under free-air temperature range (unless otherwise noted)
(1)
VALUE
Input voltage range
Output voltage
range
VIN, EN
–0.3 to 26
VBST
–0.3 to 32
VBST(wrt SW)
–0.3 to 6
V5FILT, VFB, TRIP, VO, FSEL, CER
–0.3 to 6
SW
–2 to 26
DRVH
–1 to 32
DRVH (wrt SW)
–0.3 to 6
DRVL, VREG5, SS
–0.3 to 6
PGND
Operating ambient temperature range
–40 to 85
TSTG
Storage temperature range
–55 to 150
TJ
Junction temperature range
–40 to 150
2
V
V
–0.3 to 0.3
TA
(1)
UNIT
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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DISSIPATION RATING TABLE (2 oz. trace and copper pad with solder)
PACKAGE
TA < 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 85°C
POWER RATING
16 pin HTSSOP(PWP)
2.73W
16.4mW/°C
1.09W
RECOMMENDED OPERATING CONDITIONS
MIN
Supply input voltage range
Input voltage range
Output Voltage range
MAX
VIN
4.5
24
V5FILT
4.5
5.5
VBST
–0.1
30
VBST (wrt SW)
–0.1
5.5
VFB, VO, FSEL, CER
–0.1
5.5
TRIP
–0.1
0.3
EN
–0.1
24
SW
-1.8
24
DRVH
–0.1
30
VBST (wrt SW)
–0.1
5.5
DRVL, VREG5, SS
–0.1
5.5
PGND
–0.1
0.1
TA
Operating free-air temperature
–40
85
TJ
Operating junction temperature
–40
125
UNIT
V
V
V
°C
ELECTRICAL CHARACTERISTICS
over recommended free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VIN current, TA = 25°C, VREG5 tied to V5FLT, EN =
5V, VFB = 0.8V, SW = 0.5V
350
600
µA
VIN current, TA = 25°C, No Load , EN = 0V, VREG5
= ON
28
60
µA
1.0
%
765
775
SUPPLY CURRENT
IIN
VIN supply current
IVINSDN
VIN shutdown current
VFB VOLTAGE and DISCHARGE RESISTANCE
VBG
Bandgap Initial regulation accuracy TA = 25°C
–1.0
TA = 25°C , FSEL = 0 V, CER = V5FILT
755
TA = –40°C to 85°C, FSEL = 0V, CER = V5FILT
752
TA = 25°C , FSEL = CER = V5FILT
748
TA = –40°C to 85°C, FSEL = CER = V5FILT
745
VVFBTHL
VFB threshold voltage
VVFBTHH
VFB threshold voltage
IVFB
VFB Input Current
VFB = 0.8V, TA = 25°C
RDischg
Vo Discharge Resistance
EN = 0V, VO = 0.5V, TA = 25°C
778
758
768
771
mV
mV
–0.01
±0.1
µA
40
80
Ω
5.0
5.2
V
VREG5 OUTPUT
VVREG5
VREG5 Output Voltage
TA=25°C, 5.5V < VIN < 24V, 0 < IVREG5 < 10mA
4.8
VLN5
Line regulation
5.5V < VIN < 24V, IVREG5 = 10mA
20
mV
VLD5
Load regulation
1mA < IVREG5 < 10mA
40
mV
IVREG5
Output current
VIN = 5.5V, VVREG5 = 4.0V, TA = 25°C
170
mA
OUTPUT: N-CHANNEL MOSFET GATE DRIVERS
RDRVH
DRVH resistance
RDRVL
DRVL resistance
Source, IDRVH = –100mA
5.5
11
Sink, IDRVH = 100mA
2.5
5
Source, IDRVL = –100mA
4
8
Sink, IDRVL = 100mA
2
4
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Ω
Ω
3
TPS53114
SLVS887 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
over recommended free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
TD
Dead time
MIN
TYP
MAX
DRVH-low to DRVL-on
CONDITIONS
20
50
80
DRVL-low to DRVH-on
20
40
80
0.7
UNIT
ns
INTERNAL BST DIODE
VFBST
Forward Voltage
VVREG5-VBST, IF = 10mA, TA = 25°C
0.8
0.9
V
IVBSTLK
VBST Leakage Current
VBST = 29V, SW = 24V, TA = 25°C
0.1
1
µA
ON-TIME TIMER CONTROL
TONL
On Time
SW = 12V, VO = 1.8V, FSEL = 0V
390
ns
TONH
On Time
SW = 12V, VO = 1.8V, FSEL = V5FILT
139
ns
TOFFL
Min off time
SW = 0.7V, TA = 25°C, VFB = 0.7V, FSEL = 0V
285
ns
TOFFH
Min off time
SW = 0.7V, TA = 25°C, VFB = 0.7V, FSEL = V5FILT
216
ns
SOFT START
Issc
SS charge current
VSS = 0V , SOURCE CURRENT
1.4
2.0
2.6
Issd
SS discharge current
VSS = 0.5V , SINK CURRRENT
0.1
0.15
Wake up
3.7
4.0
4.3
Hysteresis
0.2
0.3
0.4
2.0
µA
mA
UVLO
VUV5VFILT
V5FILT UVLO threshold
V
LOGIC THRESHOLD
VENH
EN H-level input voltage
EN
VENL
EN L-level input voltage
EN
V
0.3
V
CURRENT SENSE
ITRIP
TRIP source current
VTRIP = 0.1V, TA = 25°C
TCITRIP
ITRIP temperature coefficient
on the basis of 25°C
VOCLoff
VRtrip
OCP compensation offset
Current limit threshold setting
range
8.5
10
11.5
4000
(VTRIP-GND-VPGND-SW) voltage,
VTRIP-GND = 60mV, TA = 25°C
–10
(VTRIP-GND-VPGND-SW) voltage,
VTRIP-GND = 60mV
–15
15
30
200
mV
120
%
VTRIP-GND voltage
0
µA
ppm/°C
10
mV
mV
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VOVP
Output OVP trip threshold
TOVPDEL
Output OVP prop delay
VUVP
Output UVP trip threshold
OVP detect
110
UVP detect
65
Output UVP delay
TUVPEN
Output UVP enable delay
µs
1.5
Hysteresis (recovery <20µs)
TUVPDEL
115
UVP enable delay / softstart time
70
75
%
µs
10
%
17
30
40
X1.4
X1.7
X2.0
THERMAL SHUTDOWN
TSDN
Thermal shutdown threshold
Shutdown temperature (1)
Hysteresis
(1)
4
(1)
150
°C
20
Ensured by design. Not production tested.
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PIN ASSIGNMENT (TOP VIEW)
VO
1
16
VBST
15
DRVH
14
SW
13
DRVL
12
PGND
11
TRIP
VREG5
2
GND
4
CER
FSEL
5
EN
7
10
V5FILT
8
9
TPS 531 14
VFB
SS
3
6
VIN
PIN FUNCTIONS
PIN
I/O
NAME
NO.
VBST
16
EN
SS
DESCRIPTION
I
Supply input for high-side NFET driver (Boost Terminal). Connect capacitor from this pin to SW terminal. An
internal PN diode is connected between VREG5 and VBST. User can add external schottky diode if forward
drop is critical to drive the NFET.
7
I
High level enable pin.
3
O
Connect Capacitor from SS pin to GND.
VO
1
I
Connect to output of converter. This terminal is used for On-Time Adjustment and Output Discharge.
VFB
2
I
Converter feedback input. Connect with feedback resistor divider.
GND
4
I
Signal ground pin.
DRVH
15
O
High-side NFET driver output. SW referenced floating driver. The gate drive voltage is defined by the voltage
across VBST to SW node capacitor.
SW
14
I/O
Switch node connections for high-side driver. Also serves as input to current comparator.
DRVL
13
O
Synchronous NFET driver output. PGND referenced driver. The gate drive voltage is defined by VREG5
voltage.
PGND
12
TRIP
11
I
Over current trip point set input. Connect resistor from this pin to GND to set threshold for synchronous FET
RDS(on) sense. Voltage across this pin and GND is compared to voltage across PGND and SW by over current
comparator.
VIN
9
I
Supply Input for 5V linear regulator.
V5FILT
8
I
5V supply input for the entire control circuit except the NFET driver. Connect Capacitor (typical 1uF) from GND
to V5FILT. V5FILT is connected to VREG5 via internal resistor.
VREG5
10
O
5V power supply output. VREG5 is connected to V5FILT via internal resistor.
CER
5
I
Connect to GND for ceramic output capacitors. Connect to V5FILT for polymer electrolyte output capacitors
(SP-CAP, POS-CAP, PXE).
FSEL
6
I
Switching frequency selection pin. Connect to GND for low switching frequency or connect to V5FILT for high
switching frequency.
I/O
Ground return for DRVL. Also serves as input of current comparator. Connect PGND and GND together near
the IC.
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FUNCTIONAL BLOCK DIAGRAM
VIN
-30%
FSELECT
UV
VREG5
VBST
16
Control Logic
0.1 mF
15
VO
OV
1
XCON
15%
14
13
PGND
Ref
SS
12
PWM
10 mA
VFB
2
SW
VO
DRVL
PGND
GND
TRIP
OCP
EN
10x2 mF
DRVH
EN
Logic
7
SS Logic
11
LL
PGND
VIN
VIN
SS
9
3
UV
GND
OV
4
UVLO
VREG5
Protection
5VREG
10
Logic
4.7 mF
TSD
CER
Ref
5
REF
V5FILT
TEST
8
TEST BLOCK
FSEL
6
FSELECT
PowerGood
UVLO
1 mF
DETAILED DESCRIPTION
PWM OPERATION
The main control loop of the switching mode power supply (SMPS) is designed as an adaptive on-time pulse
width modulation (PWM) controller that supports a proprietary D-CAP2TM Mode. D-CAP2TM mode uses internal
compensation circuit and it is suitable for low external component count configuration with appropriate amount of
equivalent series resistance (ESR) at the output capacitor(s) and/or ceramic output capacitors. D-CAP2 mode
topology integrates a ripple injection circuit to allow use of ceramic output capacitors without external
components. It can be stable even if ripple voltage at the output, VO(ripple), is virtually zero. The output ripple
valley voltage is monitored at a feedback point voltage.
At the beginning of each cycle, the synchronous high-side MOSFET is turned on. This MOSFET is turned off
after internal one shot timer expires. The one shot timer is determined by the converter’s input voltage, VIN, and
the output voltage, VO, to keep frequency fairly constant over the input voltage range, hence it is called adaptive
on-time control. The high-side MOSFET is turned on again when the feedback information indicates insufficient
output voltage. Repeating the MOSFET operation in this manner, the controller regulates the output voltage.
LOW-SIDE DRIVER
The low-side driver is designed to drive high current, low RDS(on) N-channel MOSFET(s). The drive capability is
represented by its internal resistance. To prevent shoot through, a dead time is internally generated between
high-side MOSFET off to low-side MOSFET on, and low-side MOSFET off to high-side MOSFET on. 5V bias
voltage is delivered from the internal regulator VREG5 output. The instantaneous drive current is supplied by a
capacitor connected between VREG5 and GND. The average drive current is equal to the gate charge at
Vgs=5V times switching frequency. This gate drive current as well as the high-side gate drive current times 5V
approximates the driving power which is dissipated in the TPS53114 package.
6
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HIGH-SIDE DRIVER
The high-side driver is designed to drive high current, low RDS(on) N-channel MOSFET(s). When configured as a
floating driver, a 5V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by
the gate charge at Vgs=5V times switching frequency. The instantaneous drive current is supplied by the
capacitor between VBST and SW pins. The drive capability is represented by its internal resistance.
PWM FREQUENCY AND ADAPTIVE ON-TIME CONTROL
The TPS53114 uses an adaptive on-time control scheme and does not have a dedicated on board oscillator;
however, the device runs with pseudo-constant frequency by feed-forwarding the input and output voltage into
the on-time one-shot timer. The on-time control is inversely proportional to the input voltage and proportional to
the output voltage; therefore, the duty ratio is VO/VIN and has the same cycle time.
SOFT START AND PRE-BIASED SOFTSTART
The TPS53114 has an adjustable soft-start. When the EN pin becomes high, 2.0µA current begins charging the
capacitor which is connected from SS pin to GND. Smooth control of the output voltage is maintained during start
up.
The TPS53114 contains a unique circuit to prevent current from being pulled from the output during startup in the
condition the output is pre-biased. When the soft-start commands a voltage higher than the pre-bias level
(internal soft-start becomes greater than feedback voltage [VFB]), the controller slowly activates synchronous
rectification by starting the first DRVL pulses with a narrow on-time. It then increments that on-time on a
cycle-by-cycle basis until it coincides with the time dictated by (1-D), where D is the duty cycle of the converter.
This scheme prevents the initial sinking of the pre-bias output, and ensures that the out voltage (VO) starts and
ramps up smoothly into regulation and the control loop is given time to transition from pre-biased start-up to
normal mode operation.
SWITCHING FREQUENCY SELECTION
Connect FSEL pin to GND for a switching frequency (fSW) is 350kHz. Connect FSEL pin to V5FILT for a
switching frequency (fSW) is 700kHz.
OUTPUT DISCHARGE CONTROL
The TPS53114 discharges the outputs when EN is low, or the controller is turned off by the protection functions
(OVP, UVP, UVLO, and thermal shutdown). The device discharges output using an internal 40-Ω MOSFET which
is connected to VO and PGND. The external low-side MOSFET is not turned on during the output discharge
operation to avoid the possibility of causing negative voltage at the output. This discharge ensures that, on start,
the regulated voltage always initializes from zero volts.
CURRENT PROTECTION
The TPS53114 has cycle-by-cycle over current limiting control. The inductor current is monitored during the OFF
state and the controller retains the OFF state when the inductor current is larger than the over current trip level.
In order to provide both accuracy and cost effective solution, the device supports temperature compensated
MOSFET RDS(on) sensing. The TRIP pin should be connected to GND through the trip voltage setting resistor,
Rtrip. The TRIP terminal provides 10µA (Itrip) of current at the ambient temperature and the trip level is set to the
OCL trip voltage (Vtrip) as follows.
Vtrip (mV) = R trip (kW) ´ 10(mA)
(1)
The trip level is in the range of 30mV to 200mV over all operational temperatures. The inductor current is
monitored by the voltage between PGND pin and SW pin. Itrip has 4000ppm/°C temperature slope to compensate
the temperature dependency of RDS(on). PGND is used as the positive current sensing node so that PGND is
connected to the source terminal of the bottom MOSFET. As the comparison is done during the OFF state, Vtrip
sets the valley level of the inductor current; therefore, the load current at over current threshold, Iocp, can be
calculated as follows:
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Vtrip
1
Iocp = Vtrip RDS(on) + IL1(ripple ) 2 =
+
RDS(on)
2 ´ L1 ´ ¦ sw
´
(VIN
- VO ) ´ VO
VIN
(2)
In an over current condition, the current to the load exceeds the current to the output capacitor; thus, the output
voltage tends to fall off. Eventually, it will cross the under voltage protection threshold and shutdown.
OVER/UNDER VOLTAGE PROTECTION
The TPS53114 monitors a resistor divided feedback voltage to detect over and under voltages. When the
feedback voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and
the circuit latches the high-side MOSFET driver turns off and the low-side MOSFET driver turns on.
When the feedback voltage becomes lower than 70% of the target voltage, the UVP comparator output goes
high and an internal UVP delay counter begins. After 30us, the TPS53114 latches off both top and bottom
MOSFET drivers. This function is enabled approximately 2.0ms after power-on. The latch off is reset when EN
pin goes low.
UVLO PROTECTION
The TPS53114 has under voltage lock out protection (UVLO) that monitors the voltage of V5FILT pin. When the
V5FILT voltage is lower than UVLO threshold voltage, the device is shut off. The UVLO protection is a non-latch
protection.
THERMAL SHUTDOWN
If the temperature exceeds the threshold value (typically 150°C), the drivers will be shut off both DRVH and
DRVL are set low, the output discharge function is enabled and the device is shut off. Thermal shutdown is a
non-latch protection.
TYPICAL CHARACTERISTICS
600
45
f = 350 kHz
VO = 1.05 V
VREG5 = ON
40
IO(sd) − Shutdown Current − µA
ICC − Supply Current − µA
500
400
300
200
FSEL = V5FILT
35
30
FSEL = GND
25
20
15
10
100
5
0
−50
0
50
100
150
TJ − Junction Temperature − °C
Figure 1. VIN SUPPLY CURRENT vs. JUNCTION
TEMPERATURE
8
0
−50
0
50
100
TJ − Junction Temperature − °C
G001
150
G002
Figure 2. VIN SHUTDOWN CURRENT vs. JUNCTION
TEMPERATURE
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TYPICAL CHARACTERISTICS (continued)
500
16
4200ppm/°C for RDS(ON) Compensation
14
FSEL = GND
f = 350 kHz
f(SW) − Swithing Frequency − kHz
I(TRIP) − Source Current − µA
450
12
10
8
6
4
400
VO = 5 V
VO = 3.3 V
VO = 1.8 V
350
300
VO = 1.05 V
VO = 1.2 V
250
2
0
−50
200
0
50
100
150
TJ − Junction Temperature − °C
0
G003
600
500
VO = 1.05 V
VO = 1.8 V
25
G004
500
VO = 3.3 V
400
300
VO = 1.05 V
VO = 1.2 V
FSEL = V5FILT
300
5
20
FSEL = GND
VI = 12 V
f(SW) − Swithing Frequency − kHz
f(SW) − Swithing Frequency − kHz
VO = 3.3 V
700
0
15
Figure 4. SWITCHING FREQUENCY (IO = 1 A) vs. INPUT
VOLTAGE
600
800
400
10
VI − Input Voltage − V
Figure 3. TRIP SOURCE CURRENT vs. JUNCTION
TEMPERATURE
VO = 5 V
5
10
15
VI − Input Voltage − V
20
25
200
0.0
0.5
1.5
2.0
2.5
3.0
3.5
4.0
IO − Output Current − A
G005
Figure 5. SWITCHING FREQUENCY vs. INPUT VOLTAGE
1.0
G006
Figure 6. SWITCHING FREQUENCY vs. OUTPUT
CURRENT
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TYPICAL CHARACTERISTICS (continued)
800
1.10
VI = 12 V
1.09
1.08
VO = 3.3 V
VO − Output Voltage − V
f(SW) − Swithing Frequency − kHz
700
600
500
VO = 1.05 V
400
1.07
FSEL = GND
1.06
1.05
1.04
FSEL = V5FILT
1.03
1.02
300
FSEL = V5FILT
VI = 12 V
200
0.0
0.5
1.0
1.01
1.5
2.0
2.5
3.0
3.5
4.0
IO − Output Current − A
1.00
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IO − Output Current − A
G007
Figure 7. SWITCHING FREQUENCY vs. OUTPUT
CURRENT
0.5
G008
Figure 8. 1.05-V OUTPUT VOLTAGE vs. OUTPUT
CURRENT
1.10
IO = 3 A
1.09
VO − Output Voltage − V
1.08
VO (50mV/div)
FSEL = V5FILT
1.07
1.06
FSEL = GND
(350 kHz Selection)
1.05
1.04
FSEL = GND
1.03
Iout1 (2A/div)
1.02
1.01
1.00
0
5
10
15
VI − Input Voltage − V
20
25
Figure 9. 1.05-V OUTPUT VOLTAGE vs. INPUT VOLTAGE
10
t − Time − 20 µs/div
G009
G010
Figure 10. 1.05-V LOAD TRANSIENT RESPONSE
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Product Folder Link(s): TPS53114
TPS53114
www.ti.com ..................................................................................................................................................................................................... SLVS887 – APRIL 2009
TYPICAL CHARACTERISTICS (continued)
EN
VO (50mV/div)
SS
FSEL = V5FILT
(700 kHz Selection)
VO = 1.05 V
Iout2 (2A/div)
CSS = 4700 pF
t − Time − 20 µs/div
t − Time − 2 ms/div
G011
G012
Figure 12. STARTUP WAVEFORM
100
100
90
90
80
80
70
70
η − Efficiency − %
η − Efficiency − %
Figure 11. 1.05-V LOAD TRANSIENT RESPONSE
60
50
40
30
60
50
40
30
20
20
FSEL = GND
350 kHz Selection
VI = 12 V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
IO − Output Current − A
3.0
3.5
FSEL = V5FILT
700 kHz Selection
VI = 12 V
10
4.0
0
0.0
1.0
1.5
2.0
2.5
3.0
3.5
IO − Output Current − A
G013
Figure 13. 1.05-V EFFICIENCY vs. OUTPUT CURRENT
0.5
4.0
G014
Figure 14. 1.05-V EFFICIENCY vs. OUTPUT CURRENT
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Product Folder Link(s): TPS53114
11
TPS53114
SLVS887 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
APPLICATION INFORMATION
CHOOSE INDUCTOR
The inductance value should be determined, using Equation 3, to give the ripple current a value of approximately
1/4 to of the maximum output current. Large ripple current increases output ripple voltage, improves S/N ratio,
and contributes to a stable operation.
L1 =
1
IL1(ripple) ´ ¦ sw
´
(VIN(max) - VO )´ VO =
VIN(max)
3
IO (max) ´ ¦ sw
´
(VIN(max) - VO )´ VO
VIN(max)
(3)
The inductor must have low DCR to achieve ideal efficiency, as well as enough room above peak inductor
current before saturation. The peak inductor current can be estimated using the following (Equation 4).
Vtrip
(VIN(max) - VO) × VO
1
IL1(peak) =
+
×
RDS(on)
L1 × ƒ sw
VIN(max)
(4)
CHOOSE OUTPUT CAPACITOR
The capacitor value and ESR determines the amount of output voltage ripple. A ceramic output capacitor is
recommended.
C1= ñ
RESR á
(VIN(max) - VO) ´ VO
1
´
VO(ripple)
8 ´ ¦ sw
- RESR
IL1(ripple)
(5)
VO(ripple)
IL1(ripple)
IC1(rms) =
(6)
VO ´ (VIN - VO)
12 ´ VIN ´ L1 ´ ¦ sw
(7)
CHOOSE INPUT CAPACITOR
The TPS53114 requires an input decoupling capacitor and may require a bulk capacitor depending on the
application. A ceramic capacitor over 10µF is recommended for the decoupling capacitor. The capacitor voltage
rating must be greater than the maximum input voltage.
CHOOSE BOOTSTRAP CAPACITOR
0.1µF ceramic capacitor must be connected between the VBST and SW pins for proper operation.
CHOOSE VREG5 AND V5FILT CAPACITOR
A 4.7µF ceramic capacitor must be connected between the VREG5 and GND for proper operation. A 1µF
ceramic capacitor must be connected between the V5FILT and GND for proper operation.
CHOOSE OUTPUT VOLTAGE RESISTOR
The output voltage is set with a resistor divider from output node to the VFB pin. The use of 1% tolerance or
better divider resistors are recommended. Start with a 10kΩ for the Rl resistor and use the Equation 8 and
Equation 9 to calculate output voltage.
12
æ R1 ö
Vout = 0.765 ´ ç 1+
÷
è R2 ø
(FSEL=GND)
æ R1 ö
Vout = 0.758 × ç 1+
÷
è R2 ø
(FSEL=V5FILT)
(8)
(9)
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Product Folder Link(s): TPS53114
TPS53114
www.ti.com ..................................................................................................................................................................................................... SLVS887 – APRIL 2009
CHOOSE SOFTSTART CAPACITOR
Softstart timing equations are as follows:
Css × 0.765
Tss =
(s)
(FSEL=GND)
2e - 6
Css ´ 0.758
Tss =
(s)
(FSEL=V5FILT)
2e - 6
(10)
(11)
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Product Folder Link(s): TPS53114
13
PACKAGE OPTION ADDENDUM
www.ti.com
13-Apr-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS53114PWP
ACTIVE
HTSSOP
PWP
16
TPS53114PWPR
ACTIVE
HTSSOP
PWP
16
90
Lead/Ball Finish
MSL Peak Temp (3)
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Apr-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS53114PWPR
Package Package Pins
Type Drawing
SPQ
HTSSOP
2000
PWP
16
Reel
Reel
Diameter Width
(mm) W1 (mm)
330.0
12.4
Pack Materials-Page 1
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
7.0
5.6
1.6
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Apr-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS53114PWPR
HTSSOP
PWP
16
2000
346.0
346.0
29.0
Pack Materials-Page 2
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