TSM100N06 60V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS (V) RDS(on)(mΩ) ID (A) 60 6.7 @ VGS =10V 100 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 6.7mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) ● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing TO-220 50pcs / Tube TSM100N06CZ C0 N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V (3) TC=25°C Continuous Drain Current TC=70°C TA=25°C 100 ID TA=70°C 80 A 14 11 Drain Current-Pulsed Note 1 IDM 400 A Avalanche Current, L=0.1mH IAS 71 A Avalanche Energy, L=0.1mH EAS, EAR 400 mJ Maximum Power Dissipation TC=25°C 167 TC=70°C 107 TA=25°C PD TA=70°C Storage Temperature Range Operating Junction Temperature Range W 2 1.3 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/6 Unit 0.8 o 62.5 o C/W C/W Version: A12 TSM100N06 60V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 5.7 6.7 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Qg -- 81 -- Qgs -- 23 -- Qgd -- 24 -- Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 30V, ID = 30A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz Ciss -- 4382 -- Coss -- 668 -- Crss -- 339 -- td(on) -- 25 -- tr -- 19 -- td(off) -- 85 -- tf -- 43 -- VSD - 0.8 1.3 nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time RG = 3.3Ω Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward VGS=0V, IS=20A Voltage Reverse Recovery Time o IS = 30A, TJ=25 C tfr 36 nS V nS dI/dt = 100A/us Reverse Recovery Charge Qfr 53 nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 3. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 75A 2/6 Version: A12 TSM100N06 60V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Gate Threshold Voltage Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: A12 TSM100N06 60V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Power Derating Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge 4/6 Version: A12 TSM100N06 60V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P 5/6 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Version: A12 TSM100N06 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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