TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 100 @ VGS = -4.5V -2.8 150 @ VGS = -2.5V -2.0 190 @ VGS = -1.8V -2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch P-Channel MOSFET Ordering Information Part No. Package Packing TSM2301BCX RF SOT-23 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V ID -2.8 A IDM -8 A IS -0.72 A Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature W 0.57 +150 o TJ, TSTG - 55 to +150 o Symbol Limit TL 5 TJ Operating Junction and Storage Temperature Range 0.9 C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 120 Unit S o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. c. Surface Mounted on FR4 Board, 1/6 Version: A07 TSM2301B 20V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.45 -- -0.95 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA VDS = -9.6V, VGS = 0V IDSS -- -- -1.0 µA VDS ≥-10V, VGS = -5V ID(ON) -6 -- -- A -- 80 100 -- 110 150 -- 150 190 Zero Gate Voltage Drain Current a On-State Drain Current VGS = -4.5V, ID = -2.8A Drain-Source On-State Resistance a VGS = -2.5V, ID = -2.0A RDS(ON) VGS = -1.8V, ID = -2.0A Forward Transconductance a Diode Forward Voltage Dynamic mΩ VDS = -5V, ID = -4A gfs -- 6.5 -- S IS = -0.75A, VGS = 0V VSD -- - 0.8 -1.2 V Qg -- 5.8 -- Qgs -- 0.85 -- Qgd -- 1.7 -- Ciss -- 415 -- Coss -- 223 -- Crss -- 87 -- td(on) -- 13 -- tr -- 36 -- td(off) -- 42 -- -- 34 -- b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -6V, ID = -2.8A, VGS = -4.5V VDS = -6V, VGS = 0V, f = 1.0MHz nC pF c Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -6V, RL = 6Ω, ID = -1A, VGEN = -4.5V, RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 nS Version: A07 TSM2301B 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A07 TSM2301B 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A07 TSM2301B 20V P-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram 01 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A07 TSM2301B 20V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A07