TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM3424CX6 RF TSM3424CX6 RFG SOT-26 SOT-26 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 6.7 A IDM 30 A IS 1.7 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Ta = 25 C Maximum Power Dissipation 2.0 PD o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range W 1.3 TJ +150 o TJ, TSTG -55 to +150 o Symbol Limit C C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 30 80 Unit o C/W o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. 1/6 Version: C11 TSM3424 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit a Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 1.4 3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 µA Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1.0 µA On-State Drain Current VDS ≥ 5V, VGS = 10V ID(ON) 30 -- -- A -- 23 30 -- 32 42 Drain-Source On-State Resistance VGS = 10V, ID = 6.7A VGS = 4.5V, ID = 5.7A RDS(ON) mΩ Forward Transconductance VDS = 5V, ID = 5.0A gfs -- 14 -- S Diode Forward Voltage IS = 1.7A, VGS = 0V VSD -- 0.76 1 V Qg -- 4.52 -- Qgs -- 1.24 -- Qgd -- 1.68 -- Ciss -- 400.96 -- Coss -- 100.47 -- Crss -- 71.82 -- td(on) -- 7.42 -- tr -- 3.41 -- td(off) -- 20.4 -- -- 3.01 -- b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 15V, ID = 6.7A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 2.2Ω, ID = 1A, VGEN = 10V, RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/6 nS Version: C11 TSM3424 30V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: C11 TSM3424 30V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: C11 TSM3424 30V N-Channel MOSFET SOT-26 Mechanical Drawing DIM SOT-26 DIMENSION MILLIMETERS INCHES MIN MIN TYP MAX TYP A 0.95 BSC 0.0374 BSC A1 1.9 BSC MAX B 2.60 2.80 3.00 0.0748 BSC 0.1024 0.1102 0.1181 C 1.40 1.50 1.70 0.0551 0.0591 0.0669 D 2.80 2.90 3.10 0.1101 0.1142 0.1220 E 1.00 1.10 1.20 0.0394 0.0433 0.0472 F 0.00 -- 0.10 0.00 G 0.35 0.40 0.50 0.0138 0.0157 0.0197 H 0.10 0.15 0.20 0.0039 0.0059 0.0079 -- 0.0236 -- 10º I 0.30 -- 0.60 0.0118 J 5º -- 10º 5º 0.0039 Marking Diagram 24 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: C11 TSM3424 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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