UNISONIC TECHNOLOGIES CO., LTD
UF9Z34
Preliminary
POWER MOSFET
-17A, -55V P-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC UF9Z34 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF9Z34 is suitable for all commercial-industrial
applications, etc.
1
TO-220
FEATURES
* RDS(ON)<0.1Ω @ VGS=-10V, ID=-10A
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
D
G
S
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF9Z34L-TA3-T
UF9Z34G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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UF9Z34
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-55
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
VGS=-10V, TC=25°C
-17
A
Continuous
ID
VGS=10V, TC=100°C
-12
A
Pulsed (Note 2)
IDM
-68
A
Avalanche Current (Note 2)
IAR
-10
A
180
mJ
Single Pulse (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
5.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.7
V/ns
56
W
Power Dissipation (TC=25°C)
PD
Linear Derating Factor
0.37
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ=25°C, L=3.6mH, RG=25Ω, IAS=-10A.
3. ISD≤-10A, di/dt≤-290A/µs, VDD≤BVDSS, TJ≤150°C.
4. Pulse width≤300µs; duty cycle≤2%.
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62
2.7
UNIT
°C/W
°C/W
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Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain -Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0V, ID=-250µA
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
IGSS
VDS=-55V, VGS=0V
VDS=-44V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN TYP MAX UNIT
-55
V
-0.05
V/°C
-25
-250
100
-100
ON CHARACTERISTICS
Static Drain-Source On-State
RDS(ON) VGS=-10V, ID=-10A (Note 2)
0.10
Resistance
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
-2.0
-4.0
DYNAMIC PARAMETERS
620
Input Capacitance
CISS
Output Capacitance
COSS
280
VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
140
SWITCHING PARAMETERS
35
Total Gate Charge
QG
Gate to Source Charge
QGS
7.9
ID=-10A, VDS=-44V, VGS=-10V (Note 2)
Gate to Drain ("Miller") Charge
QGD
16
Turn-ON Delay Time
tD(ON)
13
Rise Time
tR
55
VDD=-28V, ID=-10A, RG=13Ω
RD=2.6Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
30
Fall Time
tF
41
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
IS
-17
Source Current
Maximum Body-Diode Pulsed Current
ISM
-68
(Note 1)
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-10A, VGS=0V (Note 2)
-1.3
54
82
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-10A, di/dt=-100A/µs
(Note 2)
Body Diode Reverse Recovery Charge
QRR
110 160
Note: 1. Starting TJ=25°C, L=3.6mH, RG=25Ω, IAS=-10A
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
µA
µA
nA
nA
Ω
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
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Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
-10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveforms
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UF9Z34
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF9Z34
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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