UFB200CB40P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial SMPS applications • Plug-in compatible with other SOT-227 packages SOT-227 • Easy to assemble • Direct mounting to heatsink Anode 1 Anode 2 3 • Compliant to RoHS directive 2002/95/EC 4 • Designed and qualified for industrial level DESCRIPTION The UFB200CB40P not insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. Base common cathode PRODUCT SUMMARY VR 400 V IF(AV) at TC = 146 °C per module (1) 200 A trr 89 ns Note (1) All 4 anode terminals connected ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Continuous forward current per diode IF Single pulse forward current per diode Maximum power dissipation per module Operating junction and storage temperatures (1) MAX. UNITS 400 V TC = 140 °C 142 IFSM (2) TC = 25 °C 1300 PD TC = 140 °C TJ, TStg A 368 W - 55 to 175 °C Notes (1) Both anode terminals connected; Maximum IRMS current per leg 200 A to do not exceed the maximum temperature of terminals, see fig. 6 (2) 10 ms sine or 6 ms rectangular pulse Document Number: 94276 Revision: 16-Jul-09 For technical questions, contact: [email protected] www.vishay.com 1 UFB200CB40P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 µA MIN. TYP. MAX. 400 - - IF = 100 A - 1.11 1.34 IF = 100 A, TJ = 125 °C - 0.99 1.1 UNITS V IF = 200 A - 1.3 1.6 IF = 200 A, TJ = 125 °C - 1.22 1.4 VR = VR rated - - 50 µA TJ = 175 °C, VR = VR rated - - 4 mA VR = 400 V - 100 - pF DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 400 A/µs, VR = 30 V TEST CONDITIONS - 39 - TJ = 25 °C - 89 136 TJ = 125 °C - 184 235 - 9 12 - 20 25 TJ = 25 °C - 400 815 TJ = 125 °C - 1840 2940 MIN. TYP. MAX. - - 0.19 - - 0.095 IF = 50 A dIF/dt = 200 A/µs VR = 100 V TJ = 25 °C TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting SYMBOL TEST CONDITIONS RthJC °C/W - 0.05 - Weight - 30 - g Mounting torque - 1.3 - Nm Case to heatsink, per module www.vishay.com 2 RthCS Flat, greased surface UNITS For technical questions, contact: [email protected] Document Number: 94276 Revision: 16-Jul-09 UFB200CB40P Vishay High Power Products 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 300 350 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 Single pulse (thermal resistance) 0.01 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94276 Revision: 16-Jul-09 For technical questions, contact: [email protected] www.vishay.com 3 UFB200CB40P Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A 180 250 160 230 140 210 DC 120 100 80 Square wave (D = 0.50) 80 % rated VR applied 60 TJ = 125 °C 170 150 130 110 40 TJ = 25 °C 90 20 70 See note (1) 0 0 40 50 100 80 120 160 200 240 280 320 360 400 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 350 4000 300 3500 VR = 100 V IF = 50 A TJ = 125 °C 3000 250 Qrr (nC) Average Power Loss (W) VR = 100 V IF = 50 A 190 trr (ns) Allowable Case Temperature (°C) Vishay High Power Products 200 RMS limit 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 DC 50 2000 1500 TJ = 25 °C 1000 500 0 100 0 0 2500 20 40 60 80 100 120 140 160 180 200 220 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt 50 VR = 100 V IF = 50 A 40 IRR (A) TJ = 125 °C 30 20 TJ = 25 °C 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94276 Revision: 16-Jul-09 UFB200CB40P Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A Vishay High Power Products VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Document Number: 94276 Revision: 16-Jul-09 For technical questions, contact: [email protected] www.vishay.com 5 UFB200CB40P Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A Vishay High Power Products ORDERING INFORMATION TABLE Device code UF B 200 C B 40 P 1 2 3 4 5 6 7 1 - Ultrafast rectifier 2 - Ultrafast Pt diffused 3 - Current rating (200 = 200 A) 4 - Circuit configuration (2 common cathode diodes) 5 - Package indicator (SOT-227 standard not insulated) 6 - Voltage rating (40 = 400 V) 7 - P = Lead (Pb)-free Quantity per tube is 10 pcs, M4 screw and washer included LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94276 Revision: 16-Jul-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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