UFB200FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 240 A FEATURES • Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage SOT-227 • Optimized for power conversion: welding and industrial SMPS applications • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The UFB200FA20P insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY VR 200 V IF(AV) at TC = 90 °C 240 A trr 45 ns These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 200 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 90 °C 120 Single pulse forward current per diode IFSM TC = 25 °C 1700 PD TC = 90 °C 240 Maximum power dissipation per module RMS isolation voltage VISOL Operating junction and storage temperatures Document Number: 94087 Revision: 21-Jul-10 TJ, TStg Any terminal to case, t = 1 minute A W 2500 V - 55 to 150 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 UFB200FA20P Insulated Ultrafast Rectifier Module, 240 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Forward voltage VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 120 A - - 1.1 IF = 120 A, TJ = 150 °C - - 0.95 IR = 100 μA UNITS V VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 2 mA VR = 200 V - 200 - pF DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. - - 45 TJ = 25 °C - 34 - TJ = 125 °C - 58 - TJ = 25 °C TJ = 125 °C IF = 150 A dIF/dt = 200 A/μs VR = 160 V - 5.1 - - 10.3 - TJ = 25 °C - 87 - TJ = 125 °C - 300 - MIN. TYP. MAX. - - 0.5 - - 0.25 UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting Junction to case, both leg conducting TEST CONDITIONS RthJC °C/W - 0.05 - Weight - 30 - g Mounting torque - 1.3 - Nm Case to heatsink www.vishay.com 2 RthCS Flat, greased surface UNITS For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94087 Revision: 21-Jul-10 UFB200FA20P 1000 Vishay Semiconductors 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Insulated Ultrafast Rectifier Module, 240 A 100 TJ = 150 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 100 0 1.4 200 400 300 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 PDM 0.1 Single pulse (thermal resistance) t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94087 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 UFB200FA20P Insulated Ultrafast Rectifier Module, 240 A Vishay Semiconductors 70 140 VR = 160 V TJ = 125 °C TJ = 25 °C 60 130 50 120 trr (ns) Allowable Case Temperature (°C) 150 DC 110 100 Square wave (D = 0.50) Rated VR applied 90 40 30 IF = 150 A IF = 75 A 20 80 See note (1) 10 100 70 0 20 40 60 80 100 120 140 160 1000 dIF/dt (A/µs) IF(AV) - Average Forward Current (A) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Avarage Forward Current (Per Leg) 900 150 700 VR = 160 V TJ = 125 °C TJ = 25 °C 600 IF = 150 A IF = 75 A 120 RMS limit 90 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 30 DC 20 40 60 80 100 120 140 500 400 300 200 100 0 0 Qrr (nC) Average Power Loss (W) 800 160 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) 0 100 1000 dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94087 Revision: 21-Jul-10 UFB200FA20P Insulated Ultrafast Rectifier Module, 240 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94087 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 UFB200FA20P Insulated Ultrafast Rectifier Module, 240 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code UF B 200 F A 20 P 1 2 3 4 5 6 7 1 - Ultrafast rectifier 2 - Ultrafast Pt diffused 3 - Current rating (200 = 200 A) 4 - Circuit configuration (2 separate diodes, parallel pin-out) 5 - Package indicator (SOT-227 standard isolated base) 6 - Voltage rating (20 = 200 V) 7 - None = Standard production P = Lead (Pb)-free Quantity per tube is 10, M4 screw and washer included CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94087 Revision: 21-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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