UMH13N Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES Two DTC144T chips in a package. MARKING H13 PACKAGE INFORMATION Package MPQ Leader Size SOT-363 3K 7 inch Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Power dissipation PD 150 mW TJ, TSTG 150, -55 ~ 150 °C Junction & Storage temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO 50 - - Collector-emitter breakdown voltage V(BR)CEO 50 - - Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=50µA, IC=0 Collector cut-off current ICBO - - 0.5 µA VCB=50V, IE=0 Emitter cut-off current IEBO - - 0.5 µA VEB=4V, IC=0 VCE(sat) - - 0.3 V IC=5mA, IB=0.5mA DC current transfer ratio hFE 100 - 600 Input resistance R1 32.9 - 61.1 KΩ Transition frequency fT - 250 - MHz Collector-emitter saturation voltage http://www.SeCoSGmbH.com/ 1-Nov-2011 Rev. A Unit V Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 VCE=5V, IC=1mA VCE=10V, IC=5mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 1