2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 CLASSIFICATION OF hFE Product Rank 2SB1132-P 2SB1132-Q 2SB1132-R A 82~180 120~270 180~390 E BAP BAQ BAR Range Marking 1 2 3 C B D F PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7’ inch H Collector REF. Emitter K J Base G A B C D E F L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 1.2 0.89 Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 REF. G H J K L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -1 A Collector Power Dissipation PC 500 mW TJ, TSTG 150, -55~150 °C Parameter Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO -40 - - V IC= -50μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC= -1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE= -50μA, IC=0 Collector cut-off current ICBO - - -0.5 μA VCB= -20V, IE=0 Emitter cut-off current IEBO - - -0.5 μA VEB= -4V, IC=0 DC current gain hFE 82 - 390 VCE(sat) - -0.2 -0.5 Collector-emitter saturation voltage Transition frequency Collector output capacitance http://www.SeCoSGmbH.com/ 02-Nov-2012 Rev. C Test Conditions VCE= -3V, IC= -100mA V fT - 150 - MHz Cob - 20 30 pF IC= -500mA, IB= -50mA VCE= -5V, IC= -50mA, f=30MHz VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SB1132 Elektronische Bauelemente -1A, -40V PNP Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 02-Oct-2012 Rev. C Any changes of specification will not be informed individually. Page 2 of 2