Transistors with built-in Resistor UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z (UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z) Silicon NPN epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ■ Absolute Maximum Ratings (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 1.45 0.95 +0.1 0.4 –0.05 +0.1 0.16 –0.06 1.1 –0.1 Marking Symbol (R1) UNR2211 8A 10kΩ UNR2212 8B 22kΩ UNR2213 8C 47kΩ UNR2214 8D 10kΩ UNR2215 8E 10kΩ UNR2216 8F 4.7kΩ UNR2217 8H 22kΩ UNR2218 8I 0.51kΩ UNR2219 8K 1kΩ UNR2210 8L 47kΩ UNR221D 8M 47kΩ UNR221E 8N 47kΩ UNR221F 8O 4.7kΩ UNR221K 8P 10kΩ UNR221L 8Q 4.7kΩ UNR221M EL 2.2kΩ UNR221N EX 4.7kΩ UNR221T EZ 22kΩ UNR221V FD 2.2kΩ UNR221Z FF 4.7kΩ 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 ● 2 +0.2 ■ Resistance by Part Number 3 0.8 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1 0.95 +0.2 ■ Features ● 1.9±0.2 2.9 –0.05 For digital circuits EIAJ:SC-59 Mini Type Package Internal Connection C R1 B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note) The part numbers in the parenthesis show conventional part number. 1 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions typ max Unit ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA UNR2211 0.5 UNR2212/2214/221E/221D/221M/221N/221T 0.2 UNR2213 0.1 UNR2215/2216/2217/2210 0.01 UNR221F/221K IEBO VEB = 6V, IC = 0 1.0 UNR2219 1.5 UNR2218/221L/221V 2.0 UNR221Z 0.4 mA Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Forward current transfer ratio UNR2211 35 UNR2212/221E 60 UNR2213/2214/221M 80 UNR2215*/2216*/2217*/2210* 160 UNR221F/221D/2219 hFE 460 30 20 UNR221N/221T 80 400 UNR221V 60 200 UNR221V Output voltage high level VCE(sat) VOH Output voltage low level IC = 10mA, IB = 0.3mA 0.25 IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1kΩ 0.04 UNR221D VOL UNR221E Transition frequency V V VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 VCC = 5V, VB = 10V, RL = 1kΩ 0.2 V 0.2 VCB = 10V, IE = –2mA, f = 200MHz 150 UNR2211/2214/2215/221K 10 UNR2212/2217/221T 22 UNR2213/221D/221E/2210 UNR2216/221F/221L/221N/221Z — 0.2 VCC = 5V, VB = 6V, RL = 1kΩ fT 0.25 4.9 VCC = 5V, VB = 2.5V, RL = 1kΩ UNR2213/221K Input resistance VCE = 10V, IC = 5mA UNR2218/221K/221L Collector to emitter saturation voltage MHz 47 R1 (–30%) 4.7 UNR2218 0.51 UNR2219 1 UNR221M/221V 2.2 * hFE rank classification (UNR2215/2216/2217/2210) 2 min Rank Q R S hFE 160 to 260 210 to 340 290 to 460 (+30%) kΩ UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z ■ Electrical Characteristics (continued) Parameter Symbol Conditions min typ max UNR2211/2212/2213/221L 0.8 1.0 1.2 UNR2214 0.17 0.21 0.25 UNR2218/2219 0.08 0.1 0.12 UNR221D Resistance ratio (Ta=25˚C) 4.7 UNR221E UNR221F/221T Unit 2.14 R1/R2 0.47 UNR221K 2.13 UNR221M 0.047 UNR211N 0.1 UNR211V 1.0 UNR211Z 0.21 3 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UNR2211 IC — VCE VCE(sat) — IC Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 140 0.7mA 0.6mA 0.5mA 120 100 0.4mA 0.3mA 80 60 0.2mA 40 20 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 Collector to emitter voltage VCE (V) Ta=75˚C 200 25˚C –25˚C 100 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 4 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 12 hFE — IC 400 Forward current transfer ratio hFE 160 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR2212 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 140 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 25˚C –25˚C 0.03 Collector to emitter voltage VCE (V) 1 3 10 Ta=75˚C 200 25˚C –25˚C 100 30 100 1 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 0.3 Cob — VCB 6 Ta=75˚C 0.1 0.01 0.1 0 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2213 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 120 0.9mA 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 –25˚C VCE=10V Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 5 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2214 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 80 0.4mA 60 0.3mA 40 0.2mA 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 0 –25˚C 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 3 10 30 1 100 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 6 300 0 0.3 Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR2215 IC — VCE VCE(sat) — IC 100 120 0.7mA 0.6mA 0.5mA 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 0 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 –25˚C 0.01 0.1 0.3 1 3 10 Ta=75˚C 250 200 25˚C 150 –25˚C 100 50 30 1 100 3 4 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 300 0 Cob — VCB 5 VCE=10V 350 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE 140 Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UNR2216 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 400 VCE=10V Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 350 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 –25˚C 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 7 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Cob — VCB 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 IO — VIN 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UNR2217 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 100 80 0.4mA 0.3mA 0.2mA 60 40 20 0.1mA 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 250 200 Ta=75˚C 150 25˚C –25˚C 100 50 1 3 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 300 0 0.3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 8 350 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V –25˚C Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA Collector to emitter saturation voltage VCE(sat) (V) 120 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR2218 IC — VCE VCE(sat) — IC Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 160 120 0.6mA 0.5mA 0.4mA 80 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 Collector to emitter voltage VCE (V) 25˚C –25˚C 40 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 VCB (V) 0.03 0.6 0.8 1.0 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 160 120 0.5mA 0.4mA 80 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 Collector to emitter saturation voltage VCE(sat) (V) 200 0.01 0.1 1.4 0.3 1 3 10 30 100 Output current IO (mA) VCE(sat) — IC 100 240 Ta=25˚C 1.2 Input voltage VIN (V) Characteristics charts of UNR2219 IC — VCE Collector current IC (mA) Ta=75˚C 80 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 120 0 1 0.3 Cob — VCB 6 VCE=10V –25˚C 0.01 0.1 12 hFE — IC 160 hFE — IC 160 IC/IB=10 30 VCE=10V Forward current transfer ratio hFE Collector current IC (mA) 200 Collector to emitter saturation voltage VCE(sat) (V) 100 Forward current transfer ratio hFE 240 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 120 Ta=75˚C 80 25˚C –25˚C 40 –25˚C 0.01 0.1 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 9 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Cob — VCB IO — VIN 4 3 2 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO 10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 0.4 100 0.03 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UNR2210 IC — VCE VCE(sat) — IC 100 Ta=25˚C Collector current IC (mA) 50 40 30 0.4mA 0.5mA 0.6mA 0.7mA 0.3mA 0.1mA 20 10 0 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 0.3 Collector to emitter voltage VCE (V) Ta=75˚C 250 25˚C 200 –25˚C 150 100 50 3 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 1 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 Collector to base voltage 10 300 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 0 Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 60 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR221D IC — VCE VCE(sat) — IC Collector current IC (mA) 25 IB=1.0mA 20 15 0.2mA 0.1mA 10 5 Collector to emitter saturation voltage VCE(sat) (V) 100 Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 0 0 2 4 6 8 10 10 3 1 0.3 –25˚C 0.03 25˚C –25˚C 80 40 10 30 100 1 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) 3 10000 4 Ta=75˚C 120 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V 0 1 0.3 Cob — VCB 6 Ta=75˚C 25˚C 0.1 Collector to emitter voltage VCE (V) 160 IC/IB=10 30 0.01 0.1 12 hFE — IC Forward current transfer ratio hFE 30 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 1.5 100 VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221E IC — VCE VCE(sat) — IC Collector current IC (mA) 50 40 0.3mA 0.4mA 0.5mA 30 0.2mA 0.1mA 20 10 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 hFE — IC IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 160 VCE=10V Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA 100 Collector to emitter saturation voltage VCE(sat) (V) 60 Ta=75˚C 120 25˚C –25˚C 80 40 –25˚C 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector current IC (mA) 11 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 1 1.5 100 VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 0.3 1 3 10 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221F IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 0.9mA 0.8mA 0.7mA 0.6mA 160 120 IB=1.0mA 0.5mA 80 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 IC/IB=10 30 10 3 Ta=75˚C 1 0.3 25˚C 0.1 0.03 0.01 0.1 12 Collector to emitter voltage VCE (V) 25˚C –25˚C 40 1 3 10 30 1 100 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 3 10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 80 0 0.3 10000 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 12 120 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C 5 VCE=10V –25˚C Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR221K IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.2mA 120 1.0mA 0.8mA 80 0.6mA 0.4mA 40 0.2mA 0 0 2 4 6 8 10 IC/IB=10 10 1 25˚C –25˚C 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 1 3 10 30 100 300 1000 1 Collector current IC (mA) 3 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 f=1MHz IE=0 Ta=25˚C 4 3 2 VO=0.2V Ta=25˚C 30 Input voltage VIN (V) Collector output capacitance Cob (pF) VCE=10V 0.01 12 Cob — VCB 5 Ta=75˚C 0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 240 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 10 3 1 0.3 0.1 1 0.03 0 3 1 10 30 Collector to base voltage 0.01 0.1 100 VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UNR221L IC — VCE VCE(sat) — IC 240 Collector current IC (mA) 200 160 IB=1.0mA 0.8mA 120 0.6mA 80 0.4mA 40 0.2mA 0 hFE — IC IC/IB=10 10 1 Ta=75˚C 25˚C 0.1 –25˚C 0.01 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 240 VCE=10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 0 1 3 10 30 100 300 Collector current IC (mA) 1000 1 3 10 30 100 300 1000 Collector current IC (mA) 13 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Cob — VCB IO — VIN 100 VO=0.2V Ta=25˚C f=1MHz IE=0 Ta=25˚C 5 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 10 1 0.1 1 0.01 0.1 0 3 1 10 30 100 1 0.3 3 10 30 100 Output current IO (mA) VCB (V) Collector to base voltage Characteristics charts of UNR221M IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 160 0.6mA 0.5mA 0.4mA 0.3mA 120 0.2mA 80 0.1mA 40 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0 –25˚C 0.01 0.003 2 4 6 8 10 400 300 Ta=75˚C 25˚C 200 –25˚C 100 0 1 12 3 10 30 100 300 1 1000 Cob — VCB 3 IO — VIN 104 5 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) Collector current IC (mA) Collector to emitter voltage VCE (V) VO=0.2V Ta=25˚C 30 4 3 2 103 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) VCE=10V 0.001 0 102 101 10 3 1 0.3 0.1 1 0.03 0 0.1 0.3 1 3 10 Collector to base voltage 14 500 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 hFE — IC 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR221N IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 120 100 80 0.3mA 60 0.2mA 40 0.1mA 20 IC/IB=10 VCE=10V 1 Ta=75˚C 0.1 25˚C –25˚C 0.01 0 0 2 4 6 8 10 100 25˚C 240 –25˚C 160 80 1000 10 1 3 2 1000 VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) Output current IO (µA) 4 100 Collector current IC (mA) IO — VIN 10000 f=1MHz IE=0 Ta=25˚C 5 Ta=75˚C 320 Collector current IC (mA) Cob — VCB 6 400 0 10 1 12 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) hFE — IC 480 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 10 1 1 0.4 100 Collector to base voltage VCB (V) 0.6 0.8 1 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR221T IC — VCE VCE(sat) — IC 160 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 120 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 0 hFE — IC 1 Ta=75˚C 0.1 25˚C –25˚C 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 VCE=10V 400 Ta=75˚C 320 25˚C 240 –25˚C 160 80 0 0.01 0 480 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 10 1 10 100 Collector current IC (mA) 1000 1 10 100 1000 Collector current IC (mA) 15 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Cob — VCB IO — VIN 10000 5 4 3 2 VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 10 1 1 0.4 100 Collector to base voltage VCB (V) 0.6 0.8 1 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR221V IC — VCE VCE(sat) — IC 10 Collector current IC (mA) 120 IB=1.0mA 100 0.9mA 0.8mA 0.7mA 80 0.6mA 60 0.5mA 40 0.4mA 20 0.3mA 0.2mA 0 0 2 4 6 8 10 IC/IB=10 1 Ta=75˚C 0.1 25˚C –25˚C 100 Ta=75˚C 120 25˚C 80 –25˚C 40 1 1000 4 3 2 100 1000 VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 160 Collector current IC (mA) 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 1 10 Collector to base voltage 16 200 0 10 1 Cob — VCB 5 VCE=10V 0.01 12 Collector to emitter voltage VCE (V) 6 hFE — IC 240 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 100 VCB (V) 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) 1.4 0.01 0.1 1 10 Output current IO (mA) 100 UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UNR221Z IC — VCE VCE(sat) — IC 10 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 120 100 0.4mA 80 0.3mA 60 0.2mA 40 0.1mA 20 1 Ta=75˚C 0.1 25˚C –25˚C 0 2 4 6 8 10 10 1 12 100 Collector current IC (mA) Cob — VCB IO — VIN 10000 f=1MHz IE=0 Ta=25˚C Output current IO (µA) 5 4 3 2 320 Ta=75˚C 240 25˚C –25˚C 160 80 1 1000 Collector to emitter voltage VCE (V) 6 400 0 0.01 0 Collector output capacitance Cob (pF) VCE=10V 10 100 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 1000 Input voltage VIN (V) Collector current IC (mA) 140 480 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 160 hFE — IC 100 10 VO=0.2V Ta=25˚C 10 1 0.1 1 0 –1 –10 Collector to base voltage –100 VCB (V) 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) 1.4 0.01 0.1 1 10 100 Output current IO (mA) 17 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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