PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC applications fT = 10 GHz TYP., S21e2 = 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin super lead-less minimold (1007 package) BUILT-IN TRANSISTORS 3-pin super lead-less minimold part No. Q1 Q2 NESG2046M33 NESG2107M33 ORDERING INFORMATION Part Number Quantity Supplying Form µPA880TS 50 pcs (Non reel) • 8 mm wide embossed taping µPA880TS-T3 10 kpcs/reel • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10462EJ01V0DS (1st edition) Date Published January 2004 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2004 µPA880TS ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Q1 Q2 Collector to Base Voltage VCBO 13 13 V Collector to Emitter Voltage VCEO 5 5 V Emitter to Base Voltage VEBO 1.5 1.5 V IC 40 100 mA 110 110 mW Collector Current Total Power Dissipation Ptot Note 130 in 2 elements Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB 2 Preliminary Data Sheet PU10462EJ01V0DS µPA880TS ELECTRICAL CHARACTERISTICS (TA = +25°C) (1) Q1 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 100 nA VCE = 1 V, IC = 2 mA 140 180 220 − VCE = 1 V, IC = 15 mA, f = 2 GHz 15 18 − GHz VCE = 1 V, IC = 15 mA, f = 2 GHz 11 13 − dB VCE = 1 V, IC = 3 mA, f = 2 GHz, − 0.8 1.5 dB 9.5 11.5 − dB − 0.2 0.4 pF MIN. TYP. MAX. Unit DC Current Gain hFE Gain Bandwidth Product Note 1 fT S21e 2 Insertion Power Gain Noise Figure NF ZS = Zopt Associated Gain Ga VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = Zopt Reverse Transfer Capacitance Cre Note 2 VCB = 1 V, IE = 0 mA, f = 1 MHz (2) Q2 Parameter Symbol Test Conditions Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 100 nA 140 180 220 − VCE = 1 V, IC = 5 mA, f = 2 GHz 7 10 − GHz VCE = 1 V, IC = 20 mA, f = 2 GHz − 17 − GHz DC Current Gain hFE Note 1 Gain Bandwidth Product (1) fT Gain Bandwidth Product (2) fT VCE = 1 V, IC = 5 mA Insertion Power Gain (1) S21e VCE = 1 V, IC = 5 mA, f = 2 GHz 7.5 9 − dB Insertion Power Gain (2) S21e VCE = 1 V, IC = 20 mA, f = 2 GHz − 10 − dB VCE = 1 V, IC = 5 mA, f = 2 GHz, − 0.9 1.5 dB 7 10 − dB − 0.5 0.7 pF 2 2 Noise Figure NF ZS = Zopt Associated Gain Ga VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt Reverse Transfer Capacitance Cre Note 2 VCB = 1 V, IE = 0 mA, f = 1 MHz Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank FB Marking xK hFE Value of Q1 140 to 220 hFE Value of Q2 140 to 220 Preliminary Data Sheet PU10462EJ01V0DS 3 µPA880TS PACKAGE DIMENSIONS 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) (UNIT: mm) 0.9±0.05 0.7±0.05 6 0.125±0.05 C1 4 E1 C2 0.11+0.1 –0.05 3 0.4 MAX. 5 1 2 0.35 0.35 0.7 1.0±0.05 xK 4 (Top View) Preliminary Data Sheet PU10462EJ01V0DS 1 Q1 2 3 6 5 Q2 4 B1 E2 B2 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector (Q1) Emitter (Q1) Collector (Q2) Base (Q2) Emitter (Q2) Base (Q1) µPA880TS • The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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M8E 00. 4 - 0110 Preliminary Data Sheet PU10462EJ01V0DS 5 µPA880TS For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0310