DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A) • Mold package that does not require an insulating board or insulation bushing Electrode Connection ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) 1. Base 2. Collector Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −3.0 A IC(pulse)* −6.0 A IB(DC) −1.0 A Total power dissipation PT (Tc = 25°C) 25 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) 3. Emitter * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16129EJ2V0DS00 (2nd edition) Date Published July 2002 N CP(K) Printed in Japan © 2002 1998 2SB1453 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. VCB = −60 V, IE = 0 DC current gain hFE1** VCE = −5.0 V, IC = −0.5 A 100 DC current gain hFE2** VCE = −5 V, IC = −3 A 20 MAX. Unit −10 µA 400 − − Collector saturation voltage VCE(sat)** IC = −3.0 A, IB = −300 mA −1.0 V Base saturation voltage VBE(sat)** IC = −3.0 A, IB = −300 mA −2.0 V Gain bandwidth product fT VCE = −5.0 V, IC = −0.5 A 5 MHz Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 80 pF Turn-on time ton 0.4 µs Storage time tstg IC = −2.0 A, IB1 = −IB2 = −200 mA, RL = 15 Ω, VCC ≅ −30 V Refer to the test circuit. 1.7 µs 0.5 µs Fall time tf ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D16129EJ2V0DS 2SB1453 TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16129EJ2V0DS 3 2SB1453 4 Data Sheet D16129EJ2V0DS 2SB1453 [MEMO] Data Sheet D16129EJ2V0DS 5 2SB1453 • The information in this document is current as of July, 2002. 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