DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC converters and motor drivers. FEATURES • New package with dimensions in between those of small signal and power signal package • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1578 QUALITY GRADES Electrode connection 1. Emitter 2. Collector 3.Base • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V VEBO 6.0 V Collector current (DC) IC(DC) 5.0 A Collector current (pulse) IC(pulse) 7.0 A Base current (DC) IB(DC) 1.0 A 2.0 W Emitter to base voltage PW ≤ 10 ms, duty cycle ≤ 50 % 7.5 cm × 0.7 mm ceramic board mounted 2 Total power dissipation PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16157EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2425 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions TYP. MAX. Unit Collector cutoff current ICBO VCB = 50 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 10 µA DC current gain hFE1 VCE = 1.0 V, IC = 0.1 A 60 180 DC current gain hFE2 VCE = 1.0 V, IC = 2.0 A 100 200 DC current gain hFE3 VCE = 2.0 V, IC = 5.0 A 50 150 − 400 − − Collector saturation voltage VCE(sat) IC = 2.0 A, IB = 0.2 A 90 300 mV Base saturation voltage VBE(sat) IC = 2.0 A, IB = 0.2 A 0.9 1.2 V Turn-on time ton 0.6 µs Storage time tstg IC = 2.0 A, VCC= 10 V IB1 = −IB2 = 0.2 A RL = 5.0 Ω 0.8 µs 0.08 µs Fall time tf hFE CLASSIFICATION Marking AB1 AB2 AB3 hFE2 100 to 200 160 to 320 200 to 400 TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 MIN. Data Sheet D16157EJ1V0DS 2SD2425 Data Sheet D16157EJ1V0DS 3 2SD2425 4 Data Sheet D16157EJ1V0DS 2SD2425 [MEMO] Data Sheet D16157EJ1V0DS 5 2SD2425 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4