UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a Power MOSTET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards. FEATURES * Extremely-low on-resistance * Fast switching speed * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Package UT6302G-AE3-R SOT-23 www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 3 S D Packing Tape Reel 1 of 5 QW-R502-363.a UT6302 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (VGS=-4.5V, Ta=25°C) ID -0.78 A Pulsed Drain Current (Note 2) IDM -4.9 A Peak Diode Recovery dv/dt (Note 3) dv/dt -5.0 V/nS Power Dissipation (Ta=25°C) 540 mW PD 4.3 mW /°C Derate above 25°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. ISD≤-0.61A, di/dt≤76A/µs, VDD≤V(BR)DSS, TJ=150°C THERMAL DATA PARAMETER Junction to Ambient Note: Surface Mounted on FR-4 Board, t≤5sec. SYMBOL θJA MIN TYP MAX 230 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Drain-Source Breakdown Voltage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL BVDSS IDSS IGSS △BVDSS/△TJ VGS(TH) RDS(ON) CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VGS=0 V, ID=-250 µA VDS=-16V,VGS=0V VGS=±12 V, VDS=0 V ID=-1mA, Reference to 25°C VDS =VGS, ID=-250µA VGS=-4.5V, ID=-0.61A (Note 2) VGS=-2.7V, ID=-0.31A (Note 2) VDS=-15V, VGS=0V, f=1.0MHz VGS=-4.5V, VDS=-16V ID=-0.61A (Note 2) VDD=-10V, ID=-0.61A, RG=6.2Ω, RD=16Ω (Note 2) MIN TYP MAX UNIT -1.0 ±100 V µA nA mV/°C -1.5 0.60 0.90 V Ω Ω -20 -4.9 -0.70 97 53 28 2.4 0.56 1.0 13 18 22 22 pF pF pF 3.6 0.84 1.5 nC nC nC nS nS nS nS 2 of 5 QW-R502-363.a UT6302 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-0.61A, VGS=0V (Note 2) Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current (Note 1) TJ=25°C ,IF=-0.61A, Reverse Recovery Time tRR di/dt=100A/µs (Note 2) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX) 2. Pulse Width ≤300μs, Duty Cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 35 26 MAX UNIT -1.2 V -0.54 A -4.9 A 53 39 nS nC 3 of 5 QW-R502-363.a UT6302 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. (3) Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + (2) - - (4) + ** (1) RG dv/dt controlled by RG ISD controlled by Duty Factor “D” D.U.T. – Device Under Test VGS* + - VDD* Fig. 1A Peak Diode Recovery dv/dt Test Circuit (1) Driver Gate Drive Period P.W. D= P.W. Period VGS=10V*** (2) D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt (3) D.U.T. VDS Waveform Body Recovery dv/dt Re-Applied Voltage (4) Inductor Current VDD Body Diode Forward Drop Ripple≤5％ ISD Fig. 1B Peak Diode Recovery dv/dt Waveforms * Reverse Polarity for P-Channel **Use P-Channel Driver for P-Channel Measurements *** VGS=5.0V for Logic Level and 3V Drive Devices UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-363.a UT6302 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Current Regulator Same Type as D.U.T. 50kΩ 12V 0.3µF 0.2µF QG -4.5V D.U.T. V + DS QGS QGD VG VGS -3mA IG ID Current Sampling Resistors Charge Gate Charge Test Circuit Gate Charge Waveforms VDS 90% 10% VGS td(ON) Switching Time Test Circuit tR td(OFF) tF Switching Time Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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