UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT18P10
Power MOSFET
100V, 19A P-CHANNEL
POWER MOSFET
DESCRIPTION
1
The UTC UTT18P10 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed, cost-effectiveness and a minimum on-state resistance. It can
also withstand high energy in the avalanche.
TO-252
FEATURES
* RDS(ON)<0.20Ω @ VGS=-10V, ID=-11A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT18P10L-TN3-R
UTT18P10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
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QW-R502-619.a
UTT18P10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Continuous,
TC=25°C
-19
A
ID
VGSS@-10V
Drain Current
TC=100°C
-13
A
Pulsed (Note 2)
IDM
-72
A
Avalanche Current (Note 2)
IAR
-19
A
Repetitive (Note 3)
EAS
640
mJ
Avalanche Energy
Single Pulsed (Note 2)
EAR
15
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.5
V/ns
Power Dissipation (TC=25°C)
PD
150
W
Junction Temperature
TJ
-55~+175
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)
4. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
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SYMBOL
θJC
RATINGS
1.0
UNIT
°C/W
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QW-R502-619.a
UTT18P10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
ID=-250µA, VGS=0V
MIN TYP MAX UNIT
-100
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Internal Drain Inductance
Internal Source Inductance
IGSS
VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
LD
LS
VDS=-100V, VGS=0V,
VDS=-80V, VGS=0V, TJ=150°C
VGS=+20V
VGS=-20V
VDS=VGS, ID=-250µA
VGS=-10V, ID=-11A (Note 2)
VDS=-50V, ID=-11A (Note 2)
VDS=-25V, VGS=0V, f=1.0MHz
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
Forward Turn-On Time
tON
-2.0
VDD=-50V, ID=-19A, RG=9.1Ω,
RD = 2.4Ω, See Fig. 1(Note 2)
Between lead, 6
mm (0.25.) from
package and
center of die
contact
V/°C
-100
-500
+100
-100
µA
µA
nA
nA
-4.0
0.20
V
Ω
S
6.2
1400
590
140
pF
pF
pF
61
14
29
16
73
34
57
4.5
nC
nC
nC
ns
ns
ns
ns
nH
7.5
nH
VDS=-80V, VGS=-10V, ID=-19A,
See Fig 3 (Note 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
MOSFET
symbol showing
the integral
Maximum Body-Diode Pulsed Current
ISM
reverse p-n
(Note 1)
junction diode.
Drain-Source Diode Forward Voltage
V
-0.08
7
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
Drain-Source Leakage Current
Gate- Source Leakage Current
TEST CONDITIONS
-19
A
-72
A
TJ=25°C, IS=-19A, VGS=0V
-5.0
V
(Note 2)
130 260 ns
TJ=25°C, IF=-19A, di/dt=100A/µs
(Note 2)
0.35 0.70 µC
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
Notes
1. Repetitive rating; pulse width limited by max. junction temperature.
:
2. Pulse width≤300µs; duty cycle≤2%.
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3 of 6
QW-R502-619.a
UTT18P10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
VDS
VDS
90%
RG
D.U.T.
RD
-10V
VDD
+
Preliminary
Pulse Width≤1μs
Duty Factor≤0.1%
10%
VGS
TD(ON) TR
TD(OFF) TF
Fig. 1a Switching Time Test Circuit
Fig. 1b Switching Time Waveforms
Fig. 2a Unclampled Inductive Test Circuit
Fig. 2b Unclampled Inductive Waveforms
Fig.3a Gate Charge Test Circuit
Fig. 3b Gate Charge Waveform
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www.unisonic.com.tw
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QW-R502-619.a
UTT18P10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
Preliminary
(Note 1)
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
VGS=10V *
(Note 2)
D.U.T. ISD Waveform
Reverse
Recovery
Current
(Note 3)
Body Diode Forward Current
D.U.T. VDS Waveform
Re-Applied
Voltage
Body Diode
di/dt
Diode
Recovery
dv/dt
VDD
Forward Drop
Inductor Curent
Ripple≤5
%
ISD
*** VGS=5V for Logic Level and 3V Drive Devices
For N and P Channel Power MOSFET
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)
3. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-619.a
UTT18P10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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