[ /Title (ML Series) /Subject (Multilayer Surface Mount Transient Voltage Surge Suppressors) /Autho r () /Keywords (TVS, Transient Suppression, Protection, Automotive, Load Dump, Alternator Field Decay, ML Series Data Sheet Multilayer Surface Mount Transient Voltage Surge Suppressors July 1999 File Number 2461.10 Features • Leadless 0603, 0805, 1206 and 1210 Chip Sizes The ML Series is a family of Transient Voltage Surge Suppression devices based on the Harris Multilayer fabrication technology. These components are designed to suppress a variety of transient events, including those specified by the IEC or other standards used for Electromagnetic Compliance (EMC). The ML Series is typically applied to protect integrated circuits and other components at the circuit board level. • Wide Operating Voltage Range VM(DC) = 3.5V to 120V The wide operating voltage and energy range make the ML Series suitable for numerous applications on power supply, control and signal lines. • No Plastic or Epoxy Packaging Assures Better than 94V-0 Flammability Rating • Multilayer Ceramic Construction Technology • -55oC to 125oC Operating Temperature Range • Rated for Surge Current (8 x 20) • Rated for Energy (10 x 1000) • Inherent Bidirectional Clamping • Standard Low Capacitance Types Available The ML Series is manufactured from semiconducting ceramics providing bidirectional voltage clamping and is supplied in leadless, surface mount form, compatible with modern reflow and wave soldering procedures. Harris manufactures other Multilayer Series products. See the MLE Series data sheet (Harris AnswerFAX, 407-724-7800, Doc #2463) for ESD applications. See the AUML Series for automotive applications (AnswerFAX Doc #3387) and the MLN Quad Array (AnswerFAX Doc #4682). Applications • Suppression of Inductive Switching or Other Transient Events Such as EFT and Surge Voltage at the Circuit Board Level • ESD Protection for Components Sensitive to IEC 1000-42, MIL-STD-883C Method 3015.7, and Other Industry Specifications (See Also the MLE or MLN Series) • Provides On-Board Transient Voltage Protection for ICs and Transistors • Used to Help Achieve Electromagnetic Compliance of End Products • Replace Larger Surface Mount TVS Zeners in Many Applications Packaging ML SERIES (LEADLESS CHIP) 5-3 1-800-4-HARRIS or 407-727-9207 | Copyright © Harris Corporation 1999 ML Series Absolute Maximum Ratings For ratings of individual members of a series, see device ratings and specifications table. Continuous: Steady State Applied Voltage: DC Voltage Range (VM(DC)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Voltage Range (VM(AC)RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transient: Non-Repetitive Surge Current, 8/20µs Waveform, (ITM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Surge Energy, 10/1000µs Waveform, (WTM). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Ambient Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Coefficient (αV) of Clamping Voltage (VC) at Specified Test Current . . . . . . . . . . . . . . . . . ML SERIES UNITS 3.5 to 68 2.5 to 50 V V 30 to 250 0.1 to 1.2 -55 to 125 -55 to 150 <0.01 A J oC oC %/oC Device Ratings and Specifications MAXIMUM RATINGS (125oC) SPECIFICATIONS (25oC) MAXIMUM CONTINUOUS WORKING VOLTAGE MAXIMUM NONREPETITIVE SURGE CURRENT (8/20µs) MAXIMUM NONREPETITIVE SURGE ENERGY (10/1000µs) MAXIMUM CLAMPING VOLTAGE AT 10A (OR AS NOTED) (8/20µs) VN(DC) VN(DC) VM(DC) VM(AC) ITM WTM VC MIN MAX C NOMINAL VOLTAGE AT 1mA DC TEST CURRENT TYPICAL CAPACITANCE AT f = 1MHz PART NUMBER (V) (V) (A) (J) (V) (V) (V) (pF) V3.5MLA0603 3.5 2.5 30 0.1 10 at 2A 3.7 7.0 1100 V3.5MLA0805 3.5 2.5 120 0.3 10 at 5A 3.7 7.0 2200 V3.5MLA0805L 3.5 2.5 40 0.1 10 at 2A 3.7 7.0 1200 V3.5MLA1206 3.5 2.5 100 0.3 14 3.7 7.0 6000 V5.5MLA0603 5.5 4.0 30 0.1 15.5 at 2A 7.1 9.3 660 V5.5MLA0805 5.5 4.0 120 0.3 15.5 at 5A 7.1 9.3 1600 V5.5MLA0805L 5.5 4.0 40 0.1 15.5 at 2A 7.1 9.3 860 V5.5MLA1206 5.5 4.0 150 0.4 15.5 7.1 9.3 4500 V9MLA0603 9.0 6.5 30 0.1 23 at 2A 11.0 16.0 420 V9MLA0805L 9.0 6.5 40 0.1 20 at 2A 11 14 450 V12MLA0805L 12 9.0 40 0.1 25 at 2A 14 18.5 350 V14MLA0603 14 10 30 0.1 30 at 2A 15.9 20.3 150 V14MLA0805 14 10 120 0.3 30 at 5A 15.9 20.3 480 V14MLA0805L 14 10 40 0.1 30 at 2A 15.9 20.3 270 V14MLA1206 14 10 150 0.4 30 15.9 20.3 1600 5-4 ML Series Device Ratings and Specifications (Continued) MAXIMUM RATINGS (125oC) PART NUMBER SPECIFICATIONS (25oC) MAXIMUM CONTINUOUS WORKING VOLTAGE MAXIMUM NONREPETITIVE SURGE CURRENT (8/20µs) MAXIMUM NONREPETITIVE SURGE ENERGY (10/1000µs) MAXIMUM CLAMPING VOLTAGE AT 10A (OR AS NOTED) (8/20µs) VN(DC) VN(DC) VM(DC) VM(AC) ITM WTM VC MIN MAX C NOMINAL VOLTAGE AT 1mA DC TEST CURRENT TYPICAL CAPACITANCE AT f = 1MHz (V) (V) (A) (J) (V) (V) (V) (pF) V18MLA0603 18 14 30 0.1 40 at 2A 22 28.0 125 V18MLA0805 18 14 120 0.3 40 at 5A 22 28.0 450 V18MLA0805L 18 14 40 0.1 40 at 2A 22 28.0 250 V18MLA1206 18 14 150 0.4 40 22 28.0 1100 V18MLA1210 18 14 500 2.5 40 22 28.0 1250 V26MLA0603 26 20 30 0.1 58 at 2A 31 38 90 V26MLA0805 26 20 100 0.3 58 at 5A 29.5 38.5 190 V26MLA0805L 26 20 40 0.1 58 at 2A 29.5 38.5 115 V26MLA1206 26 20 150 0.6 56 29.5 38.5 900 V26MLA1210 26 20 300 1.2 54 29.5 38.5 1000 V30MLA0603 30 25 30 0.1 65 at 2A 37 46 75 V30MLA0805L 30 25 30 0.1 65 at 2A 37 46 80 V30MLA1210 30 25 280 1.2 62 35 43 1575 V30MLA1210L 30 25 220 0.9 62 35 43 1530 V33MLA1206 33 26 180 0.8 72 38 49 550 V42MLA1206 42 30 180 0.8 86 46 60 550 V48MLA1210 48 40 250 1.2 100 54.5 66.5 450 V48MLA1210L 48 40 220 0.9 100 54.5 66.5 430 V56MLA1206 56 40 180 1.0 110 61 77 150 V60MLA1210 60 50 250 1.5 120 67 83 375 V68MLA1206 68 50 180 1.0 130 76 90 150 V85MLA1210 85 67 250 2.5 160 95 115 225 V120MLA1210 120 107 125 2.0 230 135 165 65 NOTES: 1. L suffix is a low capacitance and energy version. Contact Sales for custom capacitance requirements. 2. Typical leakage at 25oC < 25µA, maximum leakage 50µA at VM(DC). 3. Average power dissipation of transients for 0603, 0805, 1206 and 1210 sizes not to exceed 0.05, 0.10W, 0.10W and 0.15W, respectively. 5-5 ML Series Power Dissipation Ratings 100 PERCENT OF RATED VALUE When transients occur in rapid succession the average power dissipation is the energy (watt-seconds) per pulse times the number of pulses per second. The power so developed must be within the specifications shown on the Device Ratings and Characteristics table for the specific device. Certain parameter ratings must be derated at high temperatures as shown in Figure 1. 90 80 70 60 50 40 30 20 10 0 -55 50 60 70 80 90 100 110 120 130 140 150 AMBIENT TEMPERATURE (oC) PERCENT OF PEAK VALUE FIGURE 1. CURRENT, ENERGY AND POWER DERATING CURVE 100 90 O1 = VIRTUAL ORIGIN OF WAVE EXAMPLE: t = TIME FROM 10% TO 90% OF PEAK FOR AN 8/20µs CURRENT t1 = VIRTUAL FRONT TIME = 1.25 x t WAVEFORM: t2 = VIRTUAL TIME TO HALF VALUE 8µs = t1 = VIRTUAL FRONT (IMPULSE DURATION) TIME 20µs = t2 = VIRTUAL TIME TO HALF VALUE 50 10 O1 t t1 TIME t2 FIGURE 2. PEAK PULSE CURRENT TEST WAVEFORM 5-6 ML Series Maximum Transient V-I Characteristic Curves 100 MAXIMUM CLAMPING VOLTAGE (V) V30MLA0603 V26MLA0603 V18MLA0603 V14MLA0603 V9MLA0603 10 V5.5MLA0603 V3.5MLA0603 MAXIMUM CLAMP VOLTAGE MAXIMUM LEAKAGE 1 100nA TA = 25oC V3.5MLA0603 TO V30MLA0603 VM(AC) RATING 10µA 1µA 100µA 1mA 10mA 100mA 1A 10A 100A CURRENT (I) FIGURE 3. V3.5MLA0603 TO V30MLA0603 MAXIMUM V-I CHARACTERISTIC CURVES 100 MAXIMUM CLAMPING VOLTAGE (V) V26MLA0805 V18MLA0805 V14MLA0805 V5.5MLA0805 10 V3.5MLA0805 MAXIMUM CLAMP VOLTAGE MAXIMUM LEAKAGE 1 100nA TA = 25oC V3.5MLA0805 TO V30MLA0805 VM(AC) RATING 1µA 10µA 100µA 1mA 10mA 100mA 1A 10A CURRENT (I) FIGURE 4. V3.5MLA0805 TO V26MLA0805 MAXIMUM V-I CHARACTERISTIC CURVES 5-7 100A 1000A ML Series Maximum Transient V-I Characteristic Curves (Continued) 100 MAXIMUM CLAMPING VOLTAGE (V) V30MLA0805L V26MLA0805L V18MLA0805L V14MLA0805L V12MLA0805L V9MLA0805L 10 V5.5MLA0805L V3.5MLA0805L MAXIMUM CLAMP VOLTAGE MAXIMUM LEAKAGE 1 100nA 1µA 10µA 100µA TA = 25oC V3.5MLA0805L TO V30MLA0805L VM(AC) RATING 1mA 10mA 100mA 1A 10A 100A 1000A CURRENT (I) FIGURE 5. V3.5MLA0805L TO V30MLA0805L MAXIMUM V-I CHARACTERISTIC CURVES MAXIMUM CLAMPING VOLTAGE (V) 1000 TA = 25oC V3.5MLA1206 TO V68MLA1206 VM(AC) RATING V68MLA1206 V56MLA1206 V42MLA1206 V33MLA1206 V26MLA1206 V18MLA1206 100 V14MLA1206 V5.5MLA1206 10 V3.5MLA1206 MAXIMUM LEAKAGE 1 100nA 1µA 10µA 100µA MAXIMUM CLAMP VOLTAGE 1mA 10mA 100mA 1A 10A CURRENT (I) FIGURE 6. V3.5MLA1206 TO V68MLA1206 MAXIMUM V-I CHARACTERISTIC CURVES 5-8 100A 1000A ML Series Maximum Transient V-I Characteristic Curves MAXIMUM CLAMPING VOLTAGE (V) 1000 (Continued) TA = 25oC V18MLA1210 TO V120MLA1210 VM(AC) RATING V120MLA1210 V85MLA1210 V60MLA1210 MAXIMUM CLAMP VOLTAGE MAXIMUM LEAKAGE 100 V48MLA1210, V48MLA1210L V30MLA1210, V30MLA1210L V26MLA1210 V18MLA1210 10 100nA 10µA 1µA 100µA 1mA 10mA 100mA 1A 10A 100A 1000A CURRENT (I) FIGURE 7. V18MLA1210 TO V120MLA1210 MAXIMUM V-I CHARACTERISTIC CURVES Device Characteristics Speed of Response At low current levels, the V-I curve of the multilayer transient voltage suppressor approaches a linear (ohmic) relationship and shows a temperature dependent affect (Figure 8). At or below the maximum working voltage, the suppressor is in a high resistance mode (approaching 106Ω at its maximum rated working voltage). Leakage currents at maximum rated voltage are below 50µA, typically 25µA. The Multilayer Suppressor is a leadless device. Its response time is not limited by the parasitic lead inductances found in other surface mount packaging. The response time of the Zinc Oxide dielectric material is less than 1 nanosecond and the ML can clamp very fast dV/dT events such as ESD. Additionally, in “real world” applications, the associated circuit wiring is often the greatest factor effecting speed of response. Therefore, transient suppressor placement within a circuit can be considered important in certain instances. When clamping transients at and above the 10mA range, the multilayer suppressor approaches a 1Ω -10Ω characteristic. Here, the multilayer becomes virtually temperature independent (Figure 9). 80 VNOM VALUE AT 25oC (%) SUPPRESSOR VOLTAGE IN PERCENT OF 100 60 50 40 30 20 25 10 10-9 10-8 50 75 100 125oC 10-7 10-6 10-5 10-4 SUPPRESSOR CURRENT (ADC) 10-3 10-2 FIGURE 8. TYPICAL TEMPERATURE DEPENDENCE OF THE CHARACTERISTIC CURVE IN THE LEAKAGE REGION 5-9 ML Series Energy Absorption/Peak Current Capability CLAMPING VOLTAGE (V) 100 Energy dissipated within the ML is calculated by multiplying the clamping voltage, transient current and transient duration. An important advantage of the multilayer is its interdigitated electrode construction within the mass of dielectric material. This results in excellent current distribution and the peak temperature per energy absorbed is very low. The matrix of semiconducting grains combine to absorb and distribute transient energy (heat) (Figure 10). This dramatically reduces peak temperature, thermal stresses and enhances device reliability. V26MLA1206 V5.5MLA1206 10 -60 -40 -20 0 20 40 60 80 100 120 As a measure of the device capability in energy handling and peak current, the V26MLA1206A part was tested with multiple pulses at its peak current rating (150A, 8/20µs). At the end of the test, 10,000 pulses later, the device voltage characteristics are still well within specification (Figure 11). 140 TEMPERATURE (oC) FIGURE 9. CLAMPING VOLTAGE OVER TEMPERATURE (VC AT 10A) FIRED CERAMIC DIELECTRIC METAL END TERMINATION METAL ELECTRODES METAL END TERMINATION DEPLETION REGION DEPLETION REGION GRAINS FIGURE 10. MULTILAYER INTERNAL CONSTRUCTION 100 PEAK CURRENT = 150A 8/20µs DURATION, 30s BETWEEN PULSES VOLTAGE V26MLA1206 10 0 2000 4000 6000 8000 NUMBER OF PULSES FIGURE 11. REPETITIVE PULSE CAPABILITY 5-10 10000 12000 ML Series Soldering Recommendations 300 MAXIMUM WAVE 260oC 250 TEMPERATURE (oC) The principal techniques used for the soldering of components in surface mount technology are Infra Red (IR) Reflow, Vapor Phase Reflow and Wave Soldering. When wave soldering, the ML suppressor is attached to the substrate by means of an adhesive. The assembly is then placed on a conveyor and run through the soldering process. With IR and Vapor Phase Reflow the device is placed in a solder paste on the substrate. As the solder paste is heated it reflows, and solders the unit to the board. SECOND PREHEAT 100 FIRST PREHEAT 0 0 0.5 1.0 1.5 2.0 2.5 3.0 TIME (MINUTES) 3.5 4.0 4.5 FIGURE 12. WAVE SOLDER PROFILE 250 MAXIMUM TEMPERATURE 222oC 200 TEMPERATURE (oC) Once the soldering process has been completed, it is still necessary to ensure that any further thermal shocks are avoided. One possible cause of thermal shock is hot printed circuit boards being removed from the solder process and subjected to cleaning solvents at room temperature. The boards must be allowed to cool to less than 50oC before cleaning. 150 50 With the ML suppressor, the recommended solder is a 62/36/2 (Sn/Pb/Ag), 60/40 (Sn/Pb), or 63/37 (Sn/Pb). Harris also recommends an RMA solder flux. Wave soldering operation is the most strenuous of the processes. To avoid the possibility of generating stresses due to thermal shock, a preheat stage in the soldering process is recommended, and the peak temperature of the solder process should be rigidly controlled. When using a reflow process, care should be taken to ensure that the ML chip is not subjected to a thermal gradient steeper than 4 degrees per second; the ideal gradient being 2 degrees per second. During the soldering process, preheating to within 100 degrees of the solders peak temperature is essential to minimize thermal shock. Examples of the soldering conditions for the ML series of suppressors are given in the tables below. 200 40-80 SECONDS ABOVE 183oC 150 RAMP RATE >50oC/s 100 PREHEAT ZONE 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TIME (MINUTES) FIGURE 13. VAPOR PHASE SOLDER PROFILE Termination Options Harris offers two types of electrode termination finish for the Multilayer product series: 250 1. Silver/Platinum (standard) MAXIMUM TEMPERATURE 222oC 2. Silver/Palladium (optional) 200 TEMPERATURE (oC) (The ordering information section describes how to designate them.) 40-80 SECONDS ABOVE 183oC 150 RAMP RATE <2oC/s 100 PREHEAT DWELL PREHEAT ZONE 50 0 0 0.5 1.0 1.5 2.0 2.5 TIME (MINUTES) 3.0 FIGURE 14. REFLOW SOLDER PROFILE 5-11 3.5 4.0 ML Series Recommended Pad Outline C B NOTE A NOTE: Avoid metal runs in this area. PAD SIZE FOR 1210 SIZE DEVICE FOR 1206 SIZE DEVICE FOR 0805 SIZE DEVICE FOR 0603 SIZE DEVICE SYMBOL IN MM IN MM IN MM IN MM A 0.219 5.53 0.203 5.15 0.144 3.65 0.11 2.8 B 0.147 3.73 0.103 2.62 0.084 2.13 0.064 1.62 C 0.073 1.85 0.065 1.65 0.058 1.48 0.044 1.12 Explanation of Terms Rated DC Voltage (VM(DC)) This is the maximum continuous DC voltage which may be applied up to the maximum operating temperature of the device. The rated DC operating voltage (working voltage) is also used as the reference point for leakage current. This voltage is always less than the breakdown voltage of the device. system. The leakage current drawn at this level is very low, as specified in the Device Ratings table. Nominal Voltage (VN(DC)) This is the voltage at which the device changes from the off (standby state) to the on (clamping state) and enters its conduction mode of operation. The voltage value is usually characterized at the 1mA point and has a specified minimum and maximum voltage range. Rated AC Voltage (VM(AC)RMS) Clamping Voltage (VC) This is the maximum continuous sinusoidal rms voltage which may be applied. This voltage may be applied at any temperature up to the maximum operating temperature of the device. This is the peak voltage appearing across the suppressor when measured at conditions of specified pulse current and specified waveform. Maximum Non-Repetitive Surge Current (ITM) This is the capacitance of the device at a specified frequency (1MHz) and bias (1VP-P). This is the maximum peak current which may be applied for an 8/20µs impulse, with rated line voltage also applied, without causing device failure. The pulse can be applied to the device in either polarity with the same confidence factor. See Figure 2 for waveform description. Maximum Non-Repetitive Surge Energy (WTM) This is the maximum rated transient energy which may be dissipated for a single current pulse at a specified impulse duration (10/1000µs), with the rated DC or RMS voltage applied, without causing device failure. Leakage (IL) at Rated DC Voltage In the nonconducting mode, the device is at a very high impedance (approaching 106Ω at its maximum rated voltage) and appears essentially as an open circuit in the 5-12 Capacitance (C) ML Series Mechanical Dimensions E L D W CHIP SIZE 1210 1206 0805 0603 SYMBOL IN MM IN MM IN MM IN MM D Max. 0.113 2.87 0.071 1.80 0.043 1.1 0.035 0.9 E 0.02 ±0.01 0.50 ±0.25 0.02 ±0.01 0.50 ±0.25 0.01 to 0.029 0.25 to 0.75 0.015 ±0.008 0.4 ±0.2 L 0.125 ±0.012 3.20 ±0.30 0.125 ±0.012 3.20 ±0.03 0.079 ±0.008 2.01 ±0.2 0.063 ±0.006 1.6 ±0.15 W 0.10 ±0.012 2.54 ±0.30 0.06 ±0.011 1.60 ±0.28 0.049 ±0.008 1.25 ±0.2 0.032 ±0.006 0.8 ±0.15 Ordering Information VXXML TYPES V 18 ML X 1206 X X X ML SERIES DEVICE FAMILY Harris TVSS Device PACKING OPTIONS A: <100 pc Bulk Pak H: 7in (178mm) Diameter Reel (Note) T: 13in (330mm) Diameter Reel (Note) MAXIMUM DC WORKING VOLTAGE END TERMINATION OPTION No Letter: Ag/Pt (Standard) W: Ag/Pd MULTILAYER DESIGNATOR PERFORMANCE DESIGNATOR A: Standard E: ESD (See MLE Data Sheet) N4: Array (See MLN Data Sheet) DEVICE SIZE: i.e., 120 mil x 60 mil NOTE: See quantity table. CAPACITANCE OPTION No Letter: Standard L: Low Capacitance Version (Where available - see device ratings for standard versions) Standard Shipping Quantities DEVICE SIZE “13” INCH REEL (“T” OPTION) “7” INCH REEL (“H” OPTION) BULK PACK (“A” OPTION) 1210 8,000 2,000 100 1206 10,000 2,500 100 0805 10,000 2,500 100 0603 10,000 2,500 100 5-13 ML Series Tape and Reel Specifications • Conforms to EIA - 481, Revision A • Can be Supplied to IEC Publication 286 - 3 SYMBOL DESCRIPTION MILLIMETERS A0 Width of Cavity Dependent on Chip Size to Minimize Rotation. B0 Length of Cavity Dependent on Chip Size to Minimize Rotation. K0 Depth of Cavity Dependent on Chip Size to Minimize Rotation. W Width of Tape F Distance Between Drive Hole Centers and Cavity Centers 3.5 ±0.5 E Distance Between Drive Hole Centers and Tape Edge 1.75 ±0.1 P1 Distance Between Cavity Center 4 ±0.1 P2 Axial Distance Between Drive Hole Centers and Cavity Centers 2 ±0.1 P0 Axial Distance Between Drive Hole Centers 4 ±0.1 D0 Drive Hole Diameter 1.55 ±0.05 D1 Diameter of Cavity Piercing 1.05 ±0.05 t1 Embossed Tape Thickness 0.3 Max t2 Top Tape Thickness 0.1 Max 8 ±0.2 NOTE: Dimensions in millimeters. t1 D0 P0 P2 E F K0 W B0 t2 D1 P1 A0 PRODUCT IDENTIFYING LABEL PLASTIC CARRIER TAPE EMBOSSMENT TOP TAPE M0 NOMINAL 178mm OR 330mm DIA. REEL All Harris semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris semiconductor products are sold by description only. Harris Semiconductor Communications Division reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. For information regarding Harris Semiconductor Communications Division and its products, call 1-800-4-HARRIS or see web site http://www.semi.harris.com 5-14