W29C040 512K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K × 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/ program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written (erased and programmed) by using standard EPROM programmers. FEATURES • Single 5-volt write (erase and program) operations • Fast page-write operations • Software and hardware data protection • Low power consumption − Active current: 25 mA (typ.) − 256 bytes per page − Standby current: 20 µA (typ.) − Page write (erase/program) cycle: 5 mS (typ.) • − Effective byte-write (erase/program) cycle time: 19.5 µS Automatic write (erase/program) timing with internal VPP generation • End of write (erase/program) detection − Toggle bit − Optional software-protected data write • Fast chip-erase operation: 50 mS • Two 16 KB boot blocks with lockout • Typical page write (erase/program) cycles: 1K/10K (typ.) • Read access time: 90/120 nS • Ten-year data retention − Data polling • Latched address and data • All inputs and outputs directly TTL compatible • JEDEC standard byte-wide pinouts • Available packages: TSOP and PLCC -1- Publication Release Date: May 1999 Revision A5 W29C040 PIN CONFIGURATIONS BLOCK DIAGRAM VCC VSS CE A 1 2 A 1 5 A A 1 1 6 8 V C C 4 3 2 32 31 30 / W E A 1 7 OE CONTROL WE 1 A7 5 29 A14 A6 6 28 A13 27 A8 A5 7 A4 8 A3 9 A2 32-pin PLCC 26 A9 25 A11 OE A10 10 24 A1 11 23 A0 12 22 DQ0 13 21 16K Byte Boot Block (Optional) A0 . . CE DQ7 16K Byte Boot Block (Optional) A18 A11 A9 A8 A13 A14 A17 WE VCC A18 A16 A15 A12 A7 A6 A5 A4 D Q 2 G N D D Q 3 D Q 4 1 2 32 4 5 8 9 10 11 12 13 14 15 16 D Q 6 31 30 3 6 7 D Q 5 29 28 27 32-pin TSOP CORE ARRAY DECODER . 14 15 16 17 18 19 20 D Q 1 OUTPUT BUFFER 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 PIN DESCRIPTION SYMBOL A0−A18 DQ0−DQ7 -2- PIN NAME Address Inputs Data Inputs/Outputs CE Chip Enable OE Output Enable WE VCC Write Enable Power Supply GND Ground DQ0 . . DQ7 W29C040 FUNCTIONAL DESCRIPTION Read Mode The read operation of the W29C040 is controlled by CE and OE , both Chip of which have to be low for the host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip is de-selected and only standby power will be consumed. OE is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE or OE is high. Refer to the read cycle timing waveforms for further details. Page Write Mode The W29C040 is written (erased/programmed) on a page basis. Every page contains 256 bytes of data. If a byte of data within a page is to be changed, data for the entire page must be loaded into the device. Any byte that is not loaded will be erased to "FF hex" during the write operation of the page. The write operation is initiated by forcing CE and WE low and OE high. The write procedure consists of two steps. Step 1 is the byte-load cycle, in which the host writes to the page buffer of the device. Step 2 is an internal write (erase/program) cycle, during which the data in the page buffers are simultaneously written into the memory array for non-volatile storage. During the byte-load cycle, the addresses are latched by the falling edge of either CE or WE , whichever occurs last. The data are latched by the rising edge of either CE or WE , whichever occurs first. If the host loads a second byte into the page buffer within a byte-load cycle time (TBLC) of 200 µS after the initial byte-load cycle, the W29C040 will stay in the page load cycle. Additional bytes can then be loaded consecutively. The page load cycle will be terminated and the internal write (erase/program) cycle will start if no additional byte is loaded into the page buffer. A8 to A18 specify the page address. All bytes that are loaded into the page buffer must have the same page address. A0 to A7 specify the byte address within the page. The bytes may be loaded in any order; sequential loading is not required. In the internal write cycle, all data in the page buffers, i.e., 256 bytes of data, are written simultaneously into the memory array. The typical write (erase/program) time is 5 mS. The entire memory array can be written in 10.4 seconds. Before the completion of the internal write cycle, the host is free to perform other tasks such as fetching data from other locations in the system to prepare to write the next page. Software-protected Data Write The device provides a JEDEC-approved optional software-protected data write. Once this scheme is enabled, any write operation requires a three-byte command sequence (with specific data to a specific address) to be performed before the data load operation. The three-byte load command sequence begins the page load cycle, without which the write operation will not be activated. This write scheme provides optimal protection against inadvertent write cycles, such as cycles triggered by noise during system power-up and power-down. The W29C040 is shipped with the software data protection enabled. To enable the software data protection scheme, perform the three-byte command cycle at the beginning of a page load cycle. The device will then enter the software data protection mode, and any subsequent write operation must be preceded by the three-byte command sequence cycle. Once enabled, the software data protection -3- Publication Release Date: May 1999 Revision A5 W29C040 will remain enabled unless the disable commands are issued. A power transition will not reset the software data protection feature. To reset the device to unprotected mode, a six byte command sequence is required. For information about specific codes, see the Command Codes for Software Data Protection in the Table of Operating Modes. For information about timing waveforms, see the timing diagrams below. Hardware Data Protection The integrity of the data stored in the W29C040 is also hardware protected in the following ways: (1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle. (2) VCC Power Up/Down Detection: The write operation is inhibited when VCC is less than 2.5V. (3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This prevents inadvertent writes during power-up or power-down periods. (4) VCC power-on delay: When VCC has reach its sense level, the device will automatically time-out 10 mS before any write (erase/program) operation. Chip Erase Modes The entire device can be erased by using a six-byte software command code. See the Software Chip Erase Timing Diagram. Boot Block Operation There are two boot blocks (16K bytes each) in this device, which can be used to store boot code. One of them is located in the first 16K bytes and the other is located in the last 16K bytes of the memory. The first 16K or last 16K of the memory can be set as a boot block by using a seven-byte command sequence. See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the data for the designated block cannot be erased or programmed (programming lockout); other memory locations can be changed by the regular programming method. Once the boot block programming lockout feature is activated, the chip erase function will be disabled. In order to detect whether the boot block feature is set on the two 16K blocks, users can perform a six-byte command sequence: enter the product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for specific code), and then read from address "00002 hex" (for the first 16K bytes) or "7FFF2 hex" (for the last 16K bytes). If the output data is "FF hex," the boot block programming lockout feature is activated; if the output data is "FE hex," the lockout feature is inactivated and the block can be programmed. To return to normal operation, perform a three-byte command sequence to exit the identification mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection. Data Polling (DQ7)- Write Status Detection The W29C040 includes a data polling feature to indicate the end of a write cycle. When the W29C040 is in the internal write cycle, any attempt to read DQ7 of the last byte loaded during the page/byte-load cycle will receive the complement of the true data. Once the write cycle is completed. DQ7 will show the true data. See the DATA Polling Timing Diagram. -4- W29C040 Toggle Bit (DQ6)- Write Status Detection In addition to data polling, the W29C040 provides another method for determining the end of a write cycle. During the internal write cycle, any consecutive attempts to read DQ6 will produce alternating 0's and 1's. When the write cycle is completed, this toggling between 0's and 1's will stop. The device is then ready for the next operation. See Toggle Bit Timing Diagram. Product Identification The product ID operation outputs the manufacturer code and device code. Programming equipment automatically matches the device with its proper erase and programming algorithms. The manufacturer and device codes can be accessed by software or hardware operation. In the software access mode, a six-byte command sequence can be used to access the product ID. A read from address "00000 hex" outputs the manufacturer code "DA hex." A read from address "00001 hex" outputs the device code "46 hex." The product ID operation can be terminated by a three-byte command sequence. In the hardware access mode, access to the product ID is activated by forcing CE and OE low, WE high, and raising A9 to 12 volts. TABLE OF OPERATING MODES Operating Mode Selection Operating Range: 0 to 70° C (Ambient Temperature), VDD = 5V ±10%, VSS = 0V, VHH = 12V MODE PINS ADDRESS DQ. CE OE WE Read VIL VIL VIH AIN Dout Write VIL VIH VIL AIN Din Standby VIH X X X High Z X VIL X X High Z/DOUT X X VIH X High Z/DOUT X VIH X X High Z VIL VIL VIH A0 = VIL; A1−A18 = VIL; A9 = VHH Manufacturer Code DA (Hex) VIL VIL VIH A0 = VIH; A1−A18 = VIL; A9 = VHH Device Code 46 (Hex) Write Inhibit Output Disable Product ID -5- Publication Release Date: May 1999 Revision A5 W29C040 Command Codes for Software Data Protection BYTE SEQUENCE TO ENABLE PROTECTION TO DISABLE PROTECTION ADDRESS DATA 0 Write 5555H AAH ADDRESS 5555H AAH 1 Write 2AAAH 55H 2AAAH 55H 2 Write 5555H A0H 5555H 80H 3 Write - - 5555H AAH 4 Write - - 2AAAH 55H 5 Write - - 5555H 20H Software Data Protection Acquisition Flow Software Data Protection Enable Flow (Optional page-load operation) Software Data Protection Disable Flow Load data AA to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 55 to address 2AAA Load data A0 to address 5555 Load data 80 to address 5555 Sequentially load up to 256 bytes of page data Load data AA to address 5555 Load data 55 to address 2AAA Pause 10 mS Exit Load data 20 to address 5555 Pause 10 mS Exit Notes for software program code: Data Format: DQ7−DQ0 (Hex) Address Format: A14−A0 (Hex) -6- DATA W29C040 Command Codes for Software Chip Erase BYTE SEQUENCE ADDRESS DATA 0 Write 5555H AAH 1 Write 2AAAH 55H 2 Write 5555H 80H 3 Write 5555H AAH 4 Write 2AAAH 55H 5 Write 5555H 10H Software Chip Erase Acquisition Flow Load data AA to address 5555 Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 10 to address 5555 Pause 50 mS Exit Notes for software chip erase: Data Format: DQ7−DQ0 (Hex) Address Format: A14−A0 (Hex) -7- Publication Release Date: May 1999 Revision A5 W29C040 Command Codes for Product Identification and Boot Block Lockout Detection BYTE SEQUENCE ALTERNATE PRODUCT (7) IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY SOFTWARE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY SOFTWARE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION EXIT ADDRESS DATA ADDRESS DATA ADDRESS DATA 0 Write 5555 AA 5555H AAH 5555H AAH 1 Write 2AAA 55 2AAAH 55H 2AAAH 55H 2 Write 5555 90 5555H 80H 5555H F0H 3 Write - - 5555H AAH - - 4 Write - - 2AAAH 55H - - 5 Write - - 5555H 60H - Pause 10 µS Pause 10 µS Pause 10 µS Software Product Identification and Boot Block Lockout Detection Acquisition Flow Product Identification Entry (1) Load data AA to address 5555 Product Identification and Boot Block Lockout Detection Mode (3) Product Identification Exit (1) (2) Load data 55 to address 2AAA Read address = 00000 data = DA Load data 80 to address 5555 Read address = 00001 data = 46 Load data AA to address 5555 Read address = 00002 data = FF/FE Load data 55 to address 2AAA Read address = 7FFF2 data = FF/FE (2) (4) Load data AA to address 5555 Load data 55 to address 2AAA Load data F0 to address 5555 (5) Pause 10 uS (6) Load data 60 to address 5555 Normal Mode Pause 10 uS Notes for software product identification/boot block lockout detection: (1) Data Format: DQ7−DQ0 (Hex); Address Format: A14−A0 (Hex) (2) A1−A18 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH. (3) The device does not remain in identification and boot block (address 0002 Hex/7FFF2 Hex respond to first 16K/last 16K) lockout detection mode if power down. (4), (5) If the output data is "FF Hex," the boot block programming lockout feature is activated; if the output data "FE Hex," the lockout feature is inactivated and the block can be programmed. (6) The device returns to standard operation mode. (7) This product supports both the JEDEC standard 3 byte command code sequence and original 6 byte command code sequence. For new designs, Winbond recommends that the 3 byte command code sequence be used. -8- W29C040 Command Codes for Boot Block Lockout Enable BYTE SEQUENCE BOOT BLOCK LOCKOUT FEATURE SET ON FIRST 16K ADDRESS BOOT BLOCK ADDRESS DATA BOOT BLOCK LOCKOUT FEATURE SET ON LAST 16K ADDRESS BOOT BLOCK ADDRESS DATA 0 Write 5555H AAH 5555H AAH 1 Write 2AAAH 55H 2AAAH 55H 2 Write 5555H 80H 5555H 80H 3 Write 5555H AAH 5555H AAH 4 Write 2AAAH 55H 2AAAH 55H 5 Write 5555H 40H 5555H 40H 6 Write 00000H 00H 3FFFFH FFH Pause 10 mS Pause 10 mS Boot Block Lockout Enable Acquisition Flow Boot Block Lockout Feature Set on First 16K Address Boot Block Boot Block Lockout Feature Set on Last 16K Address Boot Block Load data AA to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 55 to address 2AAA Load data 80 to address 5555 Load data 80 to address 5555 Load data AA to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 55 to address 2AAA Load data 40 to address 5555 Load data 40 to address 5555 Load data 00 to address 00000 Load data FF to address 3FFFF Pause 10 mS Pause 10 mS Notes for boot block lockout enable: 1. Data Format: DQ7−DQ0 (Hex) 2. Address Format: A14−A0 (Hex) 3. If you have any questions about this command sequence, please contact the local distributor or Winbond Electronics Corp. -9- Publication Release Date: May 1999 Revision A5 W29C040 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER RATING UNIT -0.5 to +7.0 V 0 to +70 °C -65 to +150 °C D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V -0.5 to 12.5 V Power Supply Voltage to Vss Potential Operating Temperature Storage Temperature Voltage on A9 and OE Pin to Ground Potential Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. Operating Characteristics (VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C) PARAMETER Power Supply Current SYM. ICC TEST CONDITIONS CE = OE = VIL, WE = VIH, all DQs open LIMITS UNIT MIN. TYP. MAX. - - 50 mA - 2 3 mA Address inputs = VIL/VIH, at f = 5 MHz Standby VDD Current (TTL input) ISB1 Standby VDD Current (CMOS input) ISB2 CE = VDD -0.3V, all DQs open - 20 100 µA Input Leakage Current ILI VIN = GND to VDD - - 10 µA Output Leakage Current ILO VIN = GND to VDD - - 10 µA Input Low Voltage VIL - - - 0.8 V Input High Voltage VIH - 2.0 - - V Output Low Voltage VOL IOL = 2.0 mA - - 0.45 V Output High Voltage VOH1 IOH = -400 µA 2.4 - - V Output High Voltage CMOS VOH2 IOH = -100 µA; VCC = 4.5V 4.2 - - V CE = VIH, all DQs open Other inputs = VIL/VIH - 10 - W29C040 Power-up Timing PARAMETER SYMBOL Power-up to Read Operation TPU. READ Power-up to Write Operation TPU. WRITE TYPICAL UNIT 100 µS 10 mS CAPACITANCE (VDD = 5.0V, TA = 25° C, f = 1 MHz) PARAMETER SYMBOL CONDITIONS MAX. UNIT DQ Pin Capacitance CDQ VDQ = 0V 12 pF Input Pin Capacitance CIN VIN = 0V 6 pF AC CHARACTERISTICS AC Test Conditions (VDD = 5.0V ±10% for 90,120 nS PARAMETER CONDITIONS Input Pulse Levels 0V to 3V Input Rise/Fall Time <5 nS Input/Output Timing Level 1.5V/1.5V Output Load 1 TTL Gate and CL = 100 pF for 90/120/150 nS AC Test Load and Waveform +5V 1.8KΩ DOUT 1.3KΩ 100 pF for 90/120 nS (Including Jig and Scope) Input Output 3V 1.5V 1.5V 0V Test Point - 11 - Test Point Publication Release Date: May 1999 Revision A5 W29C040 AC Characteristics, continued Read Cycle Timing Parameters (VDD = 5.0V ±10% for 90,120 and 150 nS, VSS = 0V, TA = 0 to 70° C) PARAMETER SYM. W29C040-90 W29C040-12 MIN. MAX. MIN. MAX. UNIT Read Cycle Time TRC 90 - 120 - nS Chip Enable Access Time TCE - 90 - 120 nS Address Access Time TAA - 90 - 120 nS Output Enable Access Time TOE - 40 - 50 nS CE High to High-Z Output TCHZ - 25 - 30 nS OE High to High-Z Output TOHZ - 25 - 30 nS Output Hold from Address change TOH 0 - 0 - nS MIN. TYP. MAX. UNIT Byte/Page-write Cycle Timing Parameters PARAMETER SYMBOL Write Cycle (erase and program) TWC - - 10 mS Address Setup Time TAS 0 - - nS Address Hold Time TAH 50 - - nS WE and CE Setup Time TCS 0 - - nS WE and CE Hold Time TCH 0 - - nS OE High Setup Time TOES 0 - - nS OE High Hold Time TOEH 0 - - nS CE Pulse Width TCP 70 - - nS WE Pulse Width TWP 70 - - nS WE High Width TWPH 100 - - nS Data Setup Time TDS 50 - - nS Data Hold Time TDH 0 - - nS Byte Load Cycle Time TBLC - - 150 µS Notes: All AC timing signals observe the following guideline for determining setup and hold times: (1) High level signal's reference level is VIH (2) Low level signal's reference level is VIL - 12 - W29C040 AC Characteristics, continued DATA Polling Characteristics (1) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Data Hold Time TDH 10 - - nS OE Hold Time TOEH 10 - - nS OE to Output Delay (2) TOE - - - nS Write Recovery Time TWR 0 - - nS SYMBOL MIN. TYP. MAX. UNIT Data Hold Time TDH 10 - - nS OE Hold Time TOEH 10 - - nS OE to Output Delay (2) TOE - - - nS OE High Pulse TOEHP 150 - - nS Write Recovery Time TWR 0 - - nS Notes: (1) These parameters are characterized and not 100% tested. (2) See TOE spec in A.C. Read Cycle Timing Parameters. Toggle Bit Characteristics (1) PARAMETER Notes: (1) These parameters are characterized and not 100% tested. (2) See TOE spec in A.C. Read Cycle Timing Parameters. TIMING WAVEFORMS Read Cycle Timing Diagram TRC Address A18-0 TCE CE T OE OE T OHZ VIH WE TOH T CHZ High-Z High-Z DQ7-0 Data Valid Data Valid T AA - 13 - Publication Release Date: May 1999 Revision A5 W29C040 Timing Waveforms, continued WE Controlled Write Cycle Timing Diagram TWC TAS TAH Address A18-0 CE TCS TCH TOES T OEH OE TWP WE TWPH TDS DQ7-0 Data Valid TDH Internal write starts CE Controlled Write Cycle Timing Diagram T AS T WC T AH Address A18-0 T WPH T CP CE T OES OE T OEH TCS TCH WE T DS DQ7-0 High Z Data Valid T DH Internal Write Starts - 14 - W29C040 Timing Waveforms, continued Page Write Cycle Timing Diagram TWC Address A18-0 DQ7-0 CE OE TWP TWPH TBLC WE Byte 1 Byte 0 Byte 2 Byte N-1 Byte N Internal Write Start DATA Polling Timing Diagram Address A18-0 WE CE TOEH OE TDH DQ7 TWR TOE HIGH-Z - 15 - Publication Release Date: May 1999 Revision A5 W29C040 Timing Waveforms, continued Toggle Bit Timing Diagram WE CE OE TOEH TDH TOE TWR HIGH-Z DQ6 Page Write Timing Diagram Software Data Protection Mode Address A18-0 2AAA 5555 DQ7-0 AA TWC Byte/page load cycle starts Three-byte sequence for software data protection mode 5555 55 A0 CE OE TBLC TWP WE TWPH SW0 SW1 SW2 Byte 0 Byte N-1 Byte N (Last Byte) Internal write starts - 16 - W29C040 Timing Waveforms, continued Reset Software Data Protection Timing Diagram Six-byte sequence for resetting software data protection mode Address A18-0 5555 2AAA 5555 DQ7-0 AA 55 80 5555 AA TWC 2AAA 5555 55 20 SW4 SW5 CE OE TWP TBLC WE TWPH SW0 SW2 SW1 SW3 Internal programming starts 5 Volt-only Software Chip Erase Timing Diagram Six-byte code for 5V-only software chip erase Address A18-0 DQ7-0 5555 2AAA 5555 AA 55 80 5555 AA TWC 2AAA 5555 55 10 SW4 SW5 CE OE TWP TBLC WE TWPH SW0 SW1 SW2 SW3 Internal erasing starts - 17 - Publication Release Date: May 1999 Revision A5 W29C040 ORDERING INFORMATION PART NO. ACCESS POWER STANDBY TIME SUPPLY CURRENT VDD CURRENT (nS) MAX. (mA) MAX. (µA) PACKAGE CYCLING W29C040T-90 90 50 100 Type one TSOP 1K W29C040T-12 120 50 100 Type one TSOP 1K W29C040P-90 90 50 100 32-pin PLCC 1K W29C040P-12 120 50 100 32-pin PLCC 1K W29C040T-90B 90 50 100 Type one TSOP 10K W29C040T-12B 120 50 100 Type one TSOP 10K W29C040P-90B 90 50 100 32-pin PLCC 10K W29C040P-12B 120 50 100 32-pin PLCC 10K Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. - 18 - W29C040 PACKAGE DIMENSIONS 32-pin PLCC HE E 4 1 32 30 Symbol 5 29 A A1 A2 b1 b c D E e GD GE HD HE L y θ GD D HD 21 13 14 c 20 Dimension in Inches Min. Nom. Max. Dimension in mm Min. Nom. Max. 0.140 0.020 3.56 0.50 0.105 0.110 0.115 2.67 2.80 2.93 0.026 0.028 0.032 0.66 0.71 0.81 0.016 0.46 0.018 0.022 0.41 0.008 0.010 0.014 0.20 0.25 0.35 0.547 0.550 0.553 13.89 13.97 14.05 0.447 0.450 0.453 11.35 11.43 11.51 0.044 0.050 0.056 1.12 1.27 1.42 0.490 0.510 0.530 12.45 12.95 13.46 0.390 0.410 0.430 9.91 10.41 10.92 0.585 0.590 0.595 14.86 14.99 15.11 0.485 0.490 0.495 12.32 12.45 12.57 0.075 0.090 0.095 1.91 2.29 2.41 0.56 0.10 0.004 0° 10° 0° 10° Notes: L A2 θ e b b1 Seating Plane A 1. Dimensions D & E do not include interlead flash. 2. Dimension b1 does not include dambar protrusion/intrusion. 3. Controlling dimension: Inches. 4. General appearance spec. should be based on final visual inspection sepc. A1 y GE 40-pin TSOP HD Dimension in Inches Symbol D c A1 e E 0.10 (0.004) b A2 A1 L Y L1 Dimension in mm Min. Nom. Max. 0.047 1.20 0.002 0.006 0.05 A2 0.037 0.039 0.041 0.95 1.00 b 0.007 0.009 0.011 0.17 0.22 0.27 c 0.004 0.006 0.008 0.10 0.15 0.20 0.15 1.05 D 0.72 18.4 18.5 E 0.390 0.394 0.398 9.90 10 10.10 HD 0.780 0.787 0.795 19.8 20.0 0.724 0.728 18.3 e 0.020 L 0.020 0.024 0.028 L1 A θ Nom. Max. A 1 M Min. 0.50 0.031 Y 0.000 θ 0 3 20.2 0.50 0.60 0.70 0.8 0.004 0.00 5 0 0.10 3 5 Controlling dimension: Millimeters - 19 - Publication Release Date: May 1999 Revision A5 W29C040 VERSION HISTORY VERSION DATE PAGE A1 Apr. 1997 - A2 Nov. 1997 4, 8 A4 A5 June 1998 Oct. 1998 May 1999 Initial Issued Correct the address from 3FFF2 to 7FFF2 9 Correct the boot block from 8K to 16K 15 Modify page write cycle timing diagram waveform 1, 18 A3 DESCRIPTION Delete cycling 100K item 6 Add. pause 10 mS 7 Add. pause 50 mS 8 Correct the time from 10 mS to 10 µS 4 Correct power-on delay from 5 mS to 10 mS 11 Correct TPU.WRITE (Typ.) from 5 mS to 10 mS 20 Correct 40-pin TSOP package drawing by 32-pin TSOP 9 Correct the address from 3FFFF to 7FFFF 1, 12, 18 Modify TACC: 90/120/150 nS à 90/120 nS binning 1, 2, 18, 19 Modify package: PDIP/SOP/PLCC/TSOP à PLCC/TSOP Headquarters Winbond Electronics (H.K.) Ltd. Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change without notice. - 20 - Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798