SITI 42

42-DL312
Version
: A.06
Issue Date : 2004-04-19
File Name : 42-DL312-A.06.doc
Total Pages : 6
Optical Fiber Receiving IC
新竹市展業一路九號四樓之三
SILICON TOUCH TECHNOLOGY INC.
9-4F-3, Prosperity Road I, Hsin-Chu, Taiwan, R.O.C.
Fax:886-3-5645626
Tel:886-3-5645656
點晶科技股份有限公司
42-DL312
SILICON TOUCH TECHNOLOGY INC.
42-DL312
OPTICAL FIBER RECEIVING IC
GENERAL DESCRIPTION
42-DL312 receiver is designed for the application of high-speed optical fiber
transmission. As an OEIC, 42-DL312 integrates photo sensor, ATC (Automatic Threshold
Control) and signal processing circuit for high-speed application, and is fabricated by using
CMOS technology. 42-DL312 is designed to operate by positive logic in which the output
voltage is set to high level when optical flux is received.
FEATURES
1. Low jitter (Δtj: TYP. 1ns)
2. High speed (Up to 13.2Mb/s, NRZ signal)
3. Built-in photo sensor and signal processing circuit.
4. Built-in ATC (Automatic Threshold Control) circuit used for stabilized output at a wide range
of optical power level
BLOCK DIAGRAM And APPLICATION CIRCUIT
VDD
VDD
42-DL312
AVDD
AMP
DVDD
COMP
OUT
ATC
AVSS
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DVSS
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Version:A.06
點晶科技股份有限公司
42-DL312
SILICON TOUCH TECHNOLOGY INC.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
Item
Symbol
Rating
Unit
VDD
-0.5 to +7
V
P
100
mW
Operating Temperature
Topr
-40 to +85
℃
Storage Temperature
Tstg
-55 to +100
℃
High Level Output Current
IOH
-1
mA
Low Level Output Current
IOL
20
mA
Supply Voltage
Power dissipation
RECOMMENDED OPERATING CONDITIONS
ITEM
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VDD
4.75
5.0
5.25
V
High Level Output Current
IOH
-
-
-150
uA
Low Level Output Current
IOL
-
-
1.6
mA
ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25℃ )
ITEM
Peak sensitivity
wavelength
Maximum Input Optical
Power for High level
Minimum Input Optical
Power for High level
SYMBOL
CONDITIONS
λP
-
PCMAX
PCMIN
Current Consumption
IDD
High Level Output Voltage
VOH
Low Level Output Voltage
VOL
Rise Time
Tr
Fall Time
Tf
Pulse Width Distortion
(note.1)
Δtw
Jitter
Δtj
Data Rate
FDATA
MIN. TYP. MAX. UNIT
-
700
-
nm
-17.5
-
-
dBm
-
-
-24
dBm
-
5
10
mA
2.4
-
VDD
V
0
-
0.4
V
-
4.5
6
ns
-
4.5
6
ns
-17
-
17
ns
PC=-15dBm
-
1
10
ns
PC=-24dBm
-
-
10
ns
0.1
-
13.2
Mb/s
Input optical
wavelength=650nm
Input optical
wavelength=650nm
VDD = 5V
IOH = -0.15mA
VDD= 5V
IOL = -1.6mA
CL=10pF
CL=10pF
Pulse width=165ns
Pulse cycle=330ns,
CL=10pF
NRZ Code, Duty 50%
Input
Note.1 Between input of an optical fiber transmitting module and output of 42-DL312.
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Version:A.06
點晶科技股份有限公司
42-DL312
SILICON TOUCH TECHNOLOGY INC.
PAD DESCRIPTIONS
Pad Name
VDD_A
VDD_D
VSS_A
VSS_D
OUT
Size
Center Coordinates (unit: um)
100um*100um
( 60, 728.15 )
100um*100um
( 60, 60 )
100um*100um
( 634.7, 72.4 )
100um*100um
( 509.7, 72.4 )
100um*100um
( 910.5, 72.4 )
I/O
Power
Power
Ground
Ground
Output
Description
Analog Power Supply
Digital Power Supply
Analog Power Ground
Digital Power Ground
Signal Output
DIE CONFIGURATION
(970.5, 790.5)
VDD_A
Photo Sensor
(648.2, 468,15)
42-DL312
VDD_D
(0, 0)
VSS_A
VSS_D
OUT
Unit:um
Die Size: 970.5um*790.5um
PD Size: 250000um×1
The Center Coordinates of PD: (648.2um, 468.15um)
* Note: SiTI reserves the right to alter the device geometry and manufacturing
processes without prior notice. Though these alterations may result in
geometrical changes, they will not affect die electrical characteristics and
pad layouts in any sense.
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點晶科技股份有限公司
42-DL312
SILICON TOUCH TECHNOLOGY INC.
REQUIREMENTS FOR WAFER DELIVERY
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 12 mils(≒300um)
Scribe Line Width: 110um
Malfunctioned die:Marked with red ink or equivalent marking
HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION
(1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during
moving, storing and processing 42-DL312.
(2) Process 42-DL312 in a clean room with proper temperature and humidity.
(3) Ground all working machines and workers wear anti-electrostatic ring to ground during
processing.
(4) Avoid contact 42-DL312with bare hands .If unavoided, wear anti-electrostatic ring and use
anti-electrostatic tool to pick it up.
GUARANTED TEMPERATURE AND RETENTION CYCLE
(1) The device/wafer 42-DL312 should be stored in the nitrogenous chest. The conditions suggested
are as follows:
Temperature = 23±3℃
Relative Humidity = 50±10%
Minimum nitrogen inflow = 3 liters/minute
(2) If the device/wafer, 42-DL312 is incidentally exposed to the air, use it for manufacturing as soon
as possible.
(3) Under the storage environment specified in item (1), six-month safe storage period is
guaranteed.
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點晶科技股份有限公司
42-DL312
SILICON TOUCH TECHNOLOGY INC.
The products listed herein are designed for ordinary electronic applications, such as
electrical appliances, audio-visual equipment, communications devices and so on. Hence,
it is advisable that the devices should not be used in medical instruments, surgical
implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention
equipment and the like. Misusing those products may directly or indirectly endanger
human life, or cause injury and property loss.
Silicon Touch Technology, Inc. will not take any responsibilities regarding the
misusage of the products mentioned above. Anyone who purchases any products
described herein with the above-mentioned intention or with such misused applications
should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its
distributors and all their officers and employees shall defend jointly and severally against
any and all claims and litigation and all damages, cost and expenses associated with such
intention and manipulation.
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