SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 2 – MAY 1997 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * (IR Typically <200pA at 25V) APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators PARTMARKING DETAIL ZC829A – J9A 1 2 1 3 SOT23 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Forward Current IF Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg VALUE UNIT 200 mA 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage VBR 25 Reverse Leakage Current IR TYP. Temperature Coefficient η Diode Capacitance Cd 7.38 Capacitance Ratio Cd / Cd 4.3 Figure of Merit Q 250 8.2 MAX. UNIT CONDITIONS. V IR = 10µA 20 nA VR = 20V 400 ppm/°C VR = 3V, f=1MHz 9.02 pF VR = 2V, f=1MHz 5.8 VR = 2V/20V, f=1MHz VR = 3V, f=50MHz ZC829A TYPICAL CHARACTERISTICS 100 10 1 1 10 VR - Reverse Voltage (V) Capacitance v Reverse Voltage 100 Temp. Coefficient (PPM/ °C) C - Capacitance (pF) 200 1200 Tj = 25 to 125°C 800 400 0 0.1 1 10 100 VR - Reverse Voltage (V) Temp. Coefficient v Reverse Voltage