SANYO 2SC5669

Ordering number : ENN6586
2SA2031 / 2SC5669
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2031 / 2SC5669
230V / 15A, AF100W Output Applications
Features
•
•
•
Package Dimensions
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
unit : mm
2022A
[2SA2031 / 2SC5669]
15.6
14.0
3.2
4.8
1.3
1.2
15.0
20.0
2.6
3.5
2.0
1.6
20.0
2.0
0.6
1.0
2
3
1.4
1
0.6
1 : Base
2 : Collector
3 : Emitter
5.45
SANYO : TO-3PB
Specifications
5.45
Note*( ) : 2SA2031
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(−)250
Collector-to-Emitter Voltage
VCEO
(−)230
V
Emitter-to-Base Voltage
VEBO
(−)6
V
IC
ICP
(−)15
A
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
V
(−)30
A
2.5
W
140
W
150
°C
−55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Conditions
Ratings
min
hFE(1)
VCB=(--)250V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
60
hFE(2)
VCE=(--)5V, IC=(--)7.5A
35
typ
max
Unit
(--)0.1
mA
(--)0.1
mA
160
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61500 TS IM TA-2927 No.6586-1/4
2SA2031 / 2SC5669
Continued from preceding page.
Parameter
Symbol
Gain-Bandwidth Product
Output Capacitance
fT
Cob
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
Base-to-Emitter Voltage
VBE
VCE=(--)5V, IC=(--)7.5A
Collector-to-Emitter Saturation Voltage
VCE(sat)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
IC=(--)7.5A, IB=(--)0.75A
IC=(--)5mA, IE=0
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-On Time
Storage Time
Fall Time
Ratings
Conditions
min
typ
Unit
max
(10)15
MHz
(400)200
pF
(--0.3)0.2
IC=(--)50mA, RBE=∞
IE=(--)5mA, IC=0
1.5
V
(--)2.0
V
(--)250
V
(--)230
V
(--)6
V
ton
tstg
See specified test circuit.
(0.45)0.56
µs
See specified test circuit.
(1.75)3.3
µs
tf
See specified test circuit.
(0.25)0.4
µs
Swicthing Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
RB
VR
IB2
RL=
6.67Ω
50Ω
+
470µF
+
100µF
VBE= --2V
VCC=50V
10IB1= --10IB2=IC=7.5A
For PNP, the polarity is reversed.
IC -- VCE
--400mA
--300mA
--200mA
--8
--100mA
--6
--40mA
--4
--2
--3
--4
--5
--6
--7
--8
Collector-to-Emitter Voltage, VCE -- V
0
2
3
Collector Current, IC -- A
12
0°C
25°
--40 C
°C
Ta
=
--2
5
6
7
8
9
10
IT02059
2SC5669
VCE=5V
14
--8
4
IC -- VBE
16
--10
--4
1
Collector-to-Emitter Voltage, VCE -- V
IT02058
--12
--6
IB=0
0
2SA2031
VCE= --5V
--14
40mA
4
--10
IC -- VBE
--16
Collector Current, IC -- A
--9
6
12
10
8
6
20°
C
--1
100mA
8
4
Ta=
1
0
10
2
IB=0
0
200mA
20mA
--20mA
--2
A
300m
2
C
--10
12
400
--40
°
--12
mA
14
Collector Current, IC -- A
Collector Current, IC -- A
2SC5669
25°C
mA
0
--50
--14
IC -- VCE
16
mA
2SA2031
500
--16
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Base-to-Emitter Voltage, VBE -- V
--1.8
--2.0
IT02060
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
1.4
IT02061
No.6586-2/4
2SA2031 / 2SC5669
hFE -- IC
3
25°C
100
7
2
DC Current Gain, hFE
--40°C
5
3
--40°C
5
3
2
3
5 7 --1.0
2
3
10
0.01
5 7 --10
2
IT02062
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
3
2
=1
Ta
25
°C
7
°C
--4
0°
C
20
--0.1
5
5 7 0.1
3
2
3
5 7 1.0
2
3
5 7 10
2
IT02063
VCE(sat) -- IC
2
2SA2031
IC / IB=10
--1.0
3
Collector Current, IC -- A
VCE(sat) -- IC
2
2
2
2SC5669
IC / IB=10
1.0
7
5
3
2
0°
C
2
=1
0.1
Ta
7
C
5 7 --0.1
0°
3
--4
2
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
°C
10
--0.01
3
2
--0.01
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
0.01
0.01
5 7 --10
2
IT02064
Collector Current, IC -- A
ICP=30A
IC=15A
tio
era
op
1.0
7
5
n
3
2
0.1
7
5
3
2
Tc=25°C
Single Pulse
For PNP, the minus sign(--)is omitted
0.01
1.0
2
3
5
7
10
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
IT02065
PC -- Ta
2SA2031 / 2SC5669
DC
10
7
5
3
2
3
3.0
2SA2031 / 2SC5669
1m
s
10 10m
PC 0ms s
=1
40W
Collector Dissipation, PC -- W
3
2
2
Collector Current, IC -- A
Forward Bias A S O
5
Collector Current, IC -- A
25°C
100
2
2
2.5
2.0
No
he
at
1.5
sin
k
1.0
0.5
0
5
7
2
100
Collector-to-Emitter Voltage, VCE -- V
3
IT02066
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02067
PC -- Tc
150
2SA2031 / 2SC5669
140
Collector Dissipation, PC -- W
2SC5669
VCE=5V
Ta=120°C
25
DC Current Gain, hFE
2SA2031
VCE= --5V
Ta=120°C
2
hFE -- IC
3
100
50
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT02068
No.6586-3/4
2SA2031 / 2SC5669
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS No.6586-4/4