SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ZDT694 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T694 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 120 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cutoff Current ICBO 0.1 µA VCB=100V IEBO 0.1 µA VEB=4V PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter Cutoff Current Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Collector-Emitter Saturation VCE(sat) Voltage 0.25 0.5 V V IC=0.1A, IB=0.5mA* IC=0.4A, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 130 Input Capacitance Cibo Output Capacitance Switching Times Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg 0.5 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 9 pF VCB=10V, f=1MHz ton toff 80 2900 ns ns IC=100mA, IB1=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 342 3 - 343 SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ZDT694 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T694 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 120 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cutoff Current ICBO 0.1 µA VCB=100V IEBO 0.1 µA VEB=4V PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter Cutoff Current Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Collector-Emitter Saturation VCE(sat) Voltage 0.25 0.5 V V IC=0.1A, IB=0.5mA* IC=0.4A, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 130 Input Capacitance Cibo Output Capacitance Switching Times Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg 0.5 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 9 pF VCB=10V, f=1MHz ton toff 80 2900 ns ns IC=100mA, IB1=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 342 3 - 343 ZDT694 TYPICAL CHARACTERISTICS IC/IB=200 Tamb=25°C IC/IB=100 0.8 0.8 - (Volts) - (Volts) IC/IB=10 0.6 0.2 0.2 0 0.01 0.1 1 0.01 1 10 VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 1.2 1.0 1K 0.8 0.6 - (Volts) 1.5K IC/IB=100 1.2 1.0 0.6 h V 0.4 1.4 -55°C +25°C +100°C +175°C 0.8 500 h 0.2 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 1.4 - (Volts) 0.1 IC - Collector Current (Amps) - Typical Gain 1.4 10 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 - Normalised Gain 0.6 0.4 0 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.0 0.6 0.4 0.2 0 0.1 IC - Collector Current (Amps) 1.2 0 0.01 IC - Collector Current (Amps) 0.8 V IC/IB=100 V V 0.4 -55°C +25°C +100°C +175°C 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC 3 - 344 10