NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX696B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Transition Frequency SYMBOL fT Input Capacitance Output Capacitance Switching Times Cibo Cobo ton toff MIN. 70 TYP. MAX. 200 6 80 4400 UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers * Relay / solenoid drivers C B MAX. UNIT 175 116 70 °C/W °C/W °C/W E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER THERMAL CHARACTERISTICS ZTX696B SYMBOL VALUE UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 0.5 A Practical Power Dissipation * Ptotp 1.5 W Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 3-248 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 180 V IC=100µA V(BR)CEO 180 V IC=10mA* V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=145V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.2 0.25 V V V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=200mA, VCE=5V* Static Forward Current Transfer Ratio hFE 500 150 3-247 IC=100mA, VCE=5V* IC=200mA, VCE=5V* NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX696B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Transition Frequency SYMBOL fT Input Capacitance Output Capacitance Switching Times Cibo Cobo ton toff MIN. 70 TYP. MAX. 200 6 80 4400 UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers * Relay / solenoid drivers C B MAX. UNIT 175 116 70 °C/W °C/W °C/W E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER THERMAL CHARACTERISTICS ZTX696B SYMBOL VALUE UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 0.5 A Practical Power Dissipation * Ptotp 1.5 W Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 3-248 PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 180 V IC=100µA V(BR)CEO 180 V IC=10mA* V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=145V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.2 0.25 V V V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=200mA, VCE=5V* Static Forward Current Transfer Ratio hFE 500 150 3-247 IC=100mA, VCE=5V* IC=200mA, VCE=5V* ZTX696B TYPICAL CHARACTERISTICS IC/IB=100 IC/IB=50 IC/IB=10 Tamb=25°C 0.6 0.4 0.2 0.01 0.6 0.4 0.1 1 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=5V 1.0 1K 0.8 0.6 500 0.4 0.2 VBE(sat) - (Volts) 1.2 -55°C +25°C +100°C +175°C 1.6 1.5K hFE - Typical Gain 1.4 0 10 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 1.4 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 10 1 0 0.01 1.4 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=5V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 IC - Collector Current (Amps) IC - Collector Current (Amps) 1.6 0.1 IC - Collector Current (Amps) 0.01 0.1 1 10 Single Pulse Test at Tamb=25°C 1 VBE - (Volts) IC/IB=50 0.2 0 hFE - Normalised Gain -55°C +25°C +100°C +175°C 0.8 VCE(sat) - (Volts) VCE(sat) - (Volts) 0.8 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.001 10 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-249 1000