SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT795A ISSUE 1 - JULY 1999 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T795A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -140 V Collector-Emitter Voltage V CEO -140 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -1 A Continuous Collector Current IC Operating and Storage Temperature Range T j :T stg -0.5 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at T amb = 25°C* Any single die “on” Both die “on” equally P tot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT795A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -140 V I C=-100µA, I E=0 V (BR)CEO -140 V I C=-10mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100µA, I C=0 Collector Cutoff Current I CBO -0.1 µA V CB=-100V Emitter Cutoff Current I EBO -0.1 µA V EB=-4V, I E=0 Collector-Emitter Saturation Voltage V CE(sat) -0.3 -0.3 -0.25 V V V I C=-100mA, I B=-1mA* I C=-200mA, I B=-5mA* I C=-500mA, I B=-50mA* Base-Emitter Saturation Voltage V BE(sat) -0.95 V I C=-500mA, I B=-50mA* Base-Emitter Turn-On Voltage V BE(on) V I C =-500mA, V CE=-2V* -0.75 Static Forward Current h FE Transfer Ratio 300 250 100 Transition Frequency fT 100 Output Capacitance C obo Switching Times 800 I C=-10mA, V CE=-2V* I C=-200mA, V CE=-2V* I C=-300mA, V CE=-2V* MHz I C=-50mA, V CE=-5V f=50MHz 15 pF V CB=-10V f=1MHz t on 100 ns I C=-100mA, V CC=-50V I B1=I B2=-10mA t off 1900 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZDT795A TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25°C 1.6 1.4 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0 1.2 1.0 0.8 0.6 0.4 0 0.1 1 10 0.1 1 10 VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C VCE=2V 1.6 750 1.2 1.0 500 0.8 0.6 250 0.4 0.2 1.4 -55°C +25°C +100°C +175°C IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 1.6 0.01 IC - Collector Current (Amps) 1.4 0 0.001 VBE(sat) - (Volts) 1.6 0.01 IC - Collector Current (Amps) hFE - Typical Gain 0.001 hFE - Normalised Gain IC/IB=40 0.2 0.2 0.1 10 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C VCE=2V 1.4 VBE - (Volts) -55°C +25°C +100°C +175°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 IC - Collector Current (Amps) VBE(on) v IC 10 10