ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6 • High current capability • Low forward voltage (VFmax=0.5V) • Fast recovery time • Small package size C APPLICATIONS • Mobile telecomms, PCMIA & SCSI • DC-DC Conversion • High frequency rectification A ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZHCS2000TA 7 8mm embossed 3000 units ZHCS2000TC 13 8mm embossed 10000 units C C A C C A Top View DEVICE MARKING ZS20 ISSUE 2 - DECEMBER 2002 1 ZHCS2000 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VR 40 V Forward Current IF 2 A Average Peak Forward Current;D.C.=50% I FAV 4 A Non Repetitive Forward Current t≤ 100µs t≤ 10ms I FSM 20 10 A A Power Dissipation at T amb =25°C P tot 1.1 W Storage Temperature Range T stg -55 to +150 °C Junction Temperature Tj 125 °C PARAMETER SYMBOL Continuous Reverse Voltage THERMAL RESISTANCE VALUE UNIT R θJA 113 °C/W R θJA 73 °C/W PARAMETER SYMBOL Junction to Ambient (a) Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 2 - DECEMBER 2002 2 ZHCS2000 TYPICAL CHARACTERISTICS +V Negative Input Pulse 1nS Rise Time 12R5 To 50R Scope 1nS Rise Time DUT 50R to 12R5 Pulse Transformer t1 D = t1 / t2 12R5 t2 Reverse Recovery Time Circuit Duty Cycle ISSUE 2 - DECEMBER 2002 3 ZHCS2000 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Reverse Breakdown Voltage V (BR)R 40 Forward Voltage VF 290 340 380 420 485 420 Reverse Current IR 160 Diode Capacitance CD Reverse Recovery Time t rr MAX. UNIT CONDITIONS. V I R =1mA 325 385 445 500 615 mV mV mV mV mV mV I F =500mA* I F =1000mA* I F =1500mA* I F =2000mA* I F =3000mA* I F =2000mA*,T amb=100°C* 300 µA V R =30V 50 pF f=1MHz,V R =25V 5.5 ns switched from IF = 500mA to I R = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ISSUE 2 - DECEMBER 2002 4 ZHCS2000 TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2002 5 ZHCS2000 ISSUE 2 - DECEMBER 2002 6 ZHCS2000 ISSUE 2 - DECEMBER 2002 7 ZHCS2000 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2000 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 2 - DECEMBER 2002 8