ZSR SERIES 2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR DEVICE DESCRIPTION FEATURES The ZSR Series three terminal fixed positive voltage • 2.85 to 12 Volt regulators feature internal circuit current limit and • Output current up to 200mA thermal shutdown making the devices difficult to • Tight initial tolerance of 2.5% destroy. The circuit design allows creation of any custom voltage in the range 2.85 to 12 volts. The • Low 600a quiescent current devices are available in a small outline surface mount • -55 to 125°C temperature range package, ideal for applications where space saving is • No external components important, as well as through hole TO92 style packaging. The devices are suited to local voltage • Internal thermal shutdown regulation applications, where problems could be • Internal short circuit current limit encountered with distributed single source regulation, • Small outline SOT223 package as well as m ore general v oltage regulation applications. • The ZSR Series show performance characteristics VOLTAGE RANGE superior to other local voltage regulators. The initial TO92 package ZSR285 2.85V ZSR300 3.0V ZSR330 3.3V lower than competitive devices. The ZSR devices are ZSR400 4.0V completely stable with no external components. ZSR485 4.85V ZSR500 5.0V ZSR520 5.2V ZSR600 6.0V ZSR800 8.0V ZSR900 9.0V ZSR1000 10.0V ZSR1200 12.0V output voltage is maintained to within 2.5% with a quiescent current of typically 350µA. Output voltage change, with input voltage and load current, is much Issue 8 - April 2006 1 SEMICONDUCTORS ZSR SERIES ABSOLUTE MAXIMUM RATING Input voltage 20V Output Current(Io) 200mA Power Dissipation (Tamb=25°C) SOT223 2W(Note 3) Operating Temperature -55 to 125°C TO92 Storage Temperature -65 to 150°C 600mW ELECTRICAL CHARACTERISTICS Notes: 3. Maximum power dissipation for the SOT223 and SO8 packages, is calculated assuming that the device is mounted on a PCB measuring 2 inches square. 4. The shut down feature of the device operates if its temperature exceeds its design limit as might occur during external faults, short circuits etc. If the regulator is supplied from an inductive source then a large voltage transient, on the regulator input, can result should the shut down circuit operate. It is advised that a capacitor (1µF or greater) should be applied across the regulator input to ensure that the maximum voltage rating of the device is not exceeded under shutdown conditions. 1. The maximum operating input voltage and output current of the device will be governed by the maximum power dissipation of the selected package. Maximum package power dissipation is specified at 25 °C and must be linearly derated to zero at Tamb=125°C. 2. The following data represents pulse test conditions with junction temperatures as indicated at the initiation of the test. Continuous operation of the devices with the stated conditions might exceed the power dissipation limits of the chosen package. ZSR285 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=6.85V SYMBOL PARAMETER VO CONDITIONS MIN. TYP. MAX. UNITS 2.78 2.85 2.92 V τ 2.736 2.964 V Vin =4.85 to 20V 2.736 I O =1 to 100mA τ 2.964 V Output Voltage I O =1 to 200mA ∆VO Line Regulation V =4.85 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV lq Quiescent Current τ 350 600 µA ∆lq Quiescent Current Change I O =1 to 200mA V in =4.85 to 20V 100 100 µA µA Vn Output Noise Voltage f=10Hz to 10kHz ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T in V in =5.85 to 18V f=120Hz Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O I O =5.0mA 75 µV rms 48 62 dB 4.85 4.55 V 0.1 mV/°C τ =Tj=-55 to 125°C Issue 8 - April 2006 SEMICONDUCTORS 2 ZSR SERIES ZSR300 TEST CONDITIONS (Unless otherwise stated):T j=25°C, IO=100mA, Vin=7V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. UNITS 2.92 3.0 3.08 V I O =1 to 200mA τ 2.88 3.12 V Vin =5 to 20V I O =1 to 100mA 2.88 3.12 V τ ∆VO Line Regulation V =5 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV Quiescent Current τ 350 600 µA 100 100 µA µA lq in ∆lq Quiescent Current Change I O =1 to 200mA V in =5 to 20V Vn Output Noise Voltage ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 75 µV rms 48 62 dB 5 4.7 V 0.1 mV/°C f=10Hz to 10kHz V in =6 to 18V f=120Hz I O =5.0mA τ ZSR330 TEST CONDITIONS (Unless otherwise stated):T j=25°C, IO=100mA, Vin=7.3V SYMBOL PARAMETER VO CONDITIONS MIN. TYP. 3.218 3.3 3.382 V I O =1 to 200mA τ 3.168 3.432 V V in =5.3 to 20V I O =1 to 100mA τ 3.168 3.432 V Output Voltage MAX. UNITS ∆VO Line Regulation V =5.3 to 20V 7.5 30 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV Quiescent Current τ 350 lq in ∆lq Quiescent Current Change I O =1 to 200mA V in =5.3 to 20V Vn Output Noise Voltage ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O I O =5.0mA τ µA µA µA 50 µV rms 50 64 dB 5.3 5 V 0.1 mV/°C f=10Hz to 10kHz V in =6.3 to 18V f=120Hz 600 100 100 =Tj=-55 to 125°C Issue 8 - April 2006 3 SEMICONDUCTORS ZSR SERIES ZSR400 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=8V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. UNITS 3.9 4.0 4.1 V I O =1 to 200mA τ 3.84 4.16 V Vin =6 to 20V I O =1 to 100mA 3.84 4.16 V τ ∆VO Line Regulation V =6 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV 350 in lq Quiescent Current τ ∆lq Quiescent Current Change I O =1 to 200mA V in =6 to 20V Vn Output Noise Voltage f=10Hz to 10kHz Ripple Rejection V in =7 to 18V f=120Hz ∆Vin /∆VO Vin Input Voltage Required To Maintain Regulation 600 µA 100 100 µA µA 75 µV rms 48 62 dB 6 5.3 V ZSR485 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=8.85V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. 4.729 4.85 4.971 UNITS V I O =1 to 200mA τ 4.656 5.044 V V in =6.8 to 20V I O =1 to 100mA 4.656 5.044 V τ ∆VO Line Regulation V =6.85 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV lq Quiescent Current τ 350 600 µA ∆lq Quiescent Current Change I O =1 to 200mA V in =6.85 to 20V 100 100 µA µA Vn Output Noise Voltage ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T in Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 50 µV rms 50 64 dB 6.85 6.55 V 0.1 mV/°C f=10Hz to 10kHz V in =7.85 to 18V f=120Hz I O =5.0mA τ =Tj = -55 to 125°C Issue 8 - April 2006 SEMICONDUCTORS 4 ZSR SERIES ZSR1000 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=14V SYMBOL PARAMETER VO CONDITIONS MIN. TYP. 9.75 10 I O =1 to 200mA τ 9.6 V in =12 to 20V I O =1 to 100mA τ 9.6 10.4 V Output Voltage MAX. UNITS 10.25 V 10.4 V ∆VO Line Regulation V =12 to 20V 12 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 9 3 30 mV mV 350 600 µA 100 100 µA µA in Quiescent Current τ ∆lq Quiescent Current Change I O =1 to 200mA V in =12 to 20V Vn Output Noise Voltage lq ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 150 µV rms 43 57 dB 12 11.7 V f=10Hz to 10kHz V in =13 to 18V f=120Hz I O =5.0mA τ 0.25 mV/°C ZSR1200 TEST CONDITIONS (Unless otherwise stated): T j=25°C, IO=100mA, Vin=16V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. 11.7 12 12.3 UNITS V I O =1 to 200mA τ 11.52 12.48 V V in =14 to 20V I O =1 to 100mA τ 11.52 12.48 V ∆VO Line Regulation V =14 to 20V 12 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 9 3 30 mV mV 350 600 µA 100 100 µA µA in Quiescent Current τ ∆lq Quiescent Current Change I O =1 to 200mA V in =14 to 20V Vn Output Noise Voltage lq ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 150 µV rms 43 57 dB 14 13.7 V f=10Hz to 10kHz V in =15 to 18V f=120Hz I O =5.0mA τ 0.25 mV/°C τ =Tj = -55 to 125 °C Issue 8 - April 2006 5 SEMICONDUCTORS ZSR285 ZSR300 ZSR400 ZSR900 ZSR SERIES TYPICAL CHARACTERISTICS Issue 8 - April 2006 SEMICONDUCTORS 6 ZSR285 ZSR300 ZSR400 ZSR900 ZSR SERIES TYPICAL CHARACTERISTICS 5.72 ZSR300 3.00 5.70 2.99 5.68 2.98 Output Voltage (V) Output Voltage (V) 3.01 Io= 5mA Vin= Vo+ 4V 2.86 2.85 5.66 Io= 5mA Vin= Vo+ 4V 4.00 3.98 2.84 3.96 ZSR400 ZSR285 2.82 3.94 -50 -25 0 25 50 75 100 125 -50 -25 Output Voltage Temperature Coefficient 50 100 125 75 450 ZSR900 Io= 0 Vin=Vo+ 4V Io= 5mA Quiescent Current (mA) Vin= Vo+ 4V Output Voltage (V) 25 Output Voltage Temperature Coefficient 9.08 9.04 9.00 8.96 8.92 400 350 300 250 -50 -25 0 25 50 75 100 125 -50 -25 Temperature (°C) 25 50 100 125 75 Quiescent Current v Temperature 2.5 400 2.0 Drop-Out Voltage (V) 500 300 200 Vo=0 Vin=10V 100 0 Temperature (°C) Output Voltage Temperature Coefficient Short-Circuit Output Current (mA) 0 Temperature (°C) Temperature (°C) 0 Io=200mA 1.5 Io=100mA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 -50 Temperature (°C) -25 0 25 50 100 125 75 Temperature (°C) Peak Output Current v Temperature Drop-Out Voltage v Temperature Issue 8 - April 2006 7 SEMICONDUCTORS ZSR SERIES ZSR600 TEST CONDITIONS (Unless otherwise stated): T j=25°C, IO=100mA, Vin=10V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. UNITS 5.85 6 6.15 V I O =1 to 200mA τ 5.76 6.24 V V in =8 to 20V I O =1 to 100mA τ 5.76 6.24 V ∆VO Line Regulation V =8 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 7 2.5 30 mV mV Quiescent Current τ 350 600 µA ∆lq Quiescent Current Change I O =1 to 200mA V in =8 to 20V 100 100 µA µA Vn Output Noise Voltage f=10Hz to 10kHz lq ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T in V in =9 to 18V f=120Hz Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 90 µV rms 48 62 dB 8 7.7 V 0.15 mV/°C I O =5.0mA τ τ =Tj = -55 to 125 °C ZSR500 TEST CONDITIONS (Unless otherwise stated): T j=25°C, IO=100mA, Vin=9V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. UNITS 4.875 5 5.125 V I O =1 to 200mA τ 4.8 5.2 V V in =7 to 20V I O =1 to 100mA τ 4.8 5.2 V ∆VO Line Regulation V =7 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV 350 600 µA 100 100 µA µA in Quiescent Current τ ∆lq Quiescent Current Change I O =1 to 200mA V in =7 to 20V Vn Output Noise Voltage f=10Hz to 10kHz lq ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T V in =8 to 18V f=120Hz Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O I O =5.0mA τ 75 µV rms 48 62 dB 7 6.7 V 0.1 mV/°C Issue 8 - April 2006 SEMICONDUCTORS 8 ZSR SERIES ZSR520 TEST CONDITIONS (Unless otherwise stated): T j=25°C, IO=100mA, SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. 5.070 5.2 5.330 UNITS V I O =1 to 200mA τ 4.99 5.41 V V in =7.2 to 20V I O =1 to 100mA τ 4.99 5.41 V ∆VO Line Regulation V =7.2 to 20V 10 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 5 2 25 mV mV 350 600 µA 100 100 µA µA in Quiescent Current τ ∆lq Quiescent Current Change I O =1 to 200mA V in =7.2 to 20V Vn Output Noise Voltage lq ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 75 µV rms 48 62 dB 7.2 6.9 V 0.1 mV/°C f=10Hz to 10kHz V in =8.2 to 18V f=120Hz I O =5.0mA τ =Tj = -55 to 125 °C ZSR900 TEST CONDITIONS (Unless otherwise stated): T j=25°C, IO=100mA, Vin=13V SYMBOL PARAMETER VO CONDITIONS Output Voltage I O =1 to 200mA Vin =11 to 20V I O =1 to 100mA τ MIN. TYP. MAX. UNITS 8.775 9.0 9.225 V 8.64 9.36 V 8.64 9.36 V τ ∆VO Line Regulation V =11 to 20V 12 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 9 3 30 mV mV 350 600 µA 100 100 µA µA in Quiescent Current τ ∆lq Quiescent Current Change I O =1 to 200mA V in =11 to 20V Vn Output Noise Voltage f=10Hz to 10kHz lq ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T V in =12 to 18V f=120Hz Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O 43 11 I O =5.0mA τ 150 µV rms 57 dB 10.7 V 0.25 mV/°C =Tj = -55 to 125°C Issue 8 - April 2006 9 SEMICONDUCTORS ZSR330 ZSR500 ZSR600 ZSR800 ZSR1000 ZSR SERIES TYPICAL CHARACTERISTICS Issue 8 - April 2006 SEMICONDUCTORS 10 ZSR330 ZSR500 ZSR600 ZSR800 ZSR1000 ZSR SERIES TYPICAL CHARACTERISTICS 4-38 Issue 8 - April 2006 11 SEMICONDUCTORS ZSR SERIES ZSR800 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=12V SYMBOL PARAMETER VO CONDITIONS Output Voltage MIN. TYP. MAX. UNITS 7.8 8 8.2 V I O =1 to 200mA τ 7.68 8.32 V V in =10 to 20V I O =1 to 100mA τ 7.68 8.32 V ∆VO Line Regulation V =10 to 20V 11 40 mV ∆VO Load Regulation I =1 to 200mA O I O =1 to 100mA 8 3 30 mV mV Quiescent Current τ 350 lq in ∆lq Quiescent Current Change I O =1 to 200mA V in =10 to 20V Vn Output Noise Voltage ∆Vin /∆VO Ripple Rejection Vin ∆VO /∆T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O I O =5.0mA τ µA µA µA 115 µV rms 44 60 dB 10 9.7 V f=10Hz to 10kHz V in =11 to 18V f=120Hz 600 100 100 0.25 mV/°C =Tj = -55 to 125°C Issue 8 - April 2006 SEMICONDUCTORS 12 ZSR485 ZSR520 ZSR1200 ZSR SERIES TYPICAL CHARACTERISTICS 4-38 Issue 8 - April 2006 13 SEMICONDUCTORS ZSR SERIES CONNECTION DIAGRAMS TO92 Package Suffix – C SOT223 Package Suffix – G IN GND OUT Top View – Connect pin 4 to pin 2 or leave pin 4 electrically isolated Bottom View ORDERING INFORMATION OPTIONS Part No Package Partmark Voltage Voltage Option TO92 SOT223 ZSR ▲ C TO92 ZSR ▲ 2.85V 285 3 3 3.0V 300 3 3 3.3V 330 3 3 4.0V 400 3 3 4.85V 485 3 3 5.0V 500 3 3 5.2V 520 3 3 6.0V 600 3 3 8.0V 800 3 3 9.0V 900 3 3 10.0V 1000 3 3 12.0V 1200 3 3 ZSR ▲ G SOT223 ZSR ▲ ▲ Voltage Option eg 3V device in TO92 package part number ZSR300C part marked ZSR300 * eg 12V device in SOT223 package part number ZSR1200G part marked ZSR1200 * SOT223 is supplied on tape in 7” reels of 1000, suffix TA or 13” reels of 4000, suffix TC. Order code e.g. ZSR300GTA. TO92 is supplied loose in boxes of 4000, no suffix, or taped and wound on a reel of 1500, suffix STOB, or taped and folded in concertina form of 1500, suffix STZ. * NOTE: Exception. ZSR1000 part mark is ZSR100 for all package options Issue 8 - April 2006 SEMICONDUCTORS 14 ZSR SERIES SCHEMATIC DIAGRAM APPLICATIONS Issue 8 - April 2006 15 SEMICONDUCTORS ZSR485 ZSR520 ZSR1200 ZSR SERIES TYPICAL CHARACTERISTICS 4- Issue 8 - April 2006 SEMICONDUCTORS 16 ZSR SERIES TYPICAL CHARACTERISTICS © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com Issue 8 - April 2006 17 SEMICONDUCTORS