PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT Output Capacitance Cobo Switching times ton toff TYP. MAX. 50 20 140 2000 UNIT CONDITIONS. MHz IC=-20mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-100mA, VC=-100V IB1=10mA, IB2=-20mA C B * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case UNIT °C/W °C/W °C/W 175 116 70 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 PARAMETER SYMBOL D=0.5 D=0.2 UNIT V Collector-Base Voltage VCBO -400 Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 TYP. MAX. V IC=-100µ A Collector-Emitter Breakdown Voltage VCEO(SUS) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.30 -0.25 -0.50 V V V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-100mA, IB=-10mA* Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-100mA, VCE=-5V* D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance Static Forward Current hFE Transfer Ratio 3-268 VALUE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER ZTX758 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* 50 50 40 3-267 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT Output Capacitance Cobo Switching times ton toff TYP. MAX. 50 20 140 2000 UNIT CONDITIONS. MHz IC=-20mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-100mA, VC=-100V IB1=10mA, IB2=-20mA C B * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case UNIT °C/W °C/W °C/W 175 116 70 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 PARAMETER SYMBOL D=0.5 D=0.2 UNIT V Collector-Base Voltage VCBO -400 Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 TYP. MAX. V IC=-100µ A Collector-Emitter Breakdown Voltage VCEO(SUS) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.30 -0.25 -0.50 V V V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-100mA, IB=-10mA* Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-100mA, VCE=-5V* D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance Static Forward Current hFE Transfer Ratio 3-268 VALUE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER ZTX758 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* 50 50 40 3-267 ZTX758 TYPICAL CHARACTERISTICS VCE(sat) - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.001 20 +100°C +25°C -55°C 1.6 300 10 20 IC/IB=10 1.4 200 100 0.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C IC - Collector Current (Amps) 1.0 VBE - (Volts) -55°C +25°C +100°C +175°C VCE=10V 0.6 VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 VCE(sat) v IC 0.8 1.4 0.1 VCE(sat) v IC 1.0 1.6 0.01 IC - Collector Current (Amps) 1.2 0 0.001 1.2 IC - Collector Current (Amps) VBE(sat) - (Volts) hFE - Normalised Gain 1.6 1.4 IC/IB=10 0.2 hFE - Typical Gain 0 0.001 -55°C +25°C +100°C +175°C 1.6 VCE(sat) - (Volts) 1.6 0.01 0.1 1 10 20 Single Pulse Test at Tamb=25°C 0.1 0.01 0.001 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-269 10 20 1000