ZTX869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 70 pF VCB=10V, f=1MHz PARAMETER SYMBOL Switching Times ton toff 60 680 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V Collector-Base Voltage Collector-Emitter Voltage *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Emitter-Base Voltage THERMAL CHARACTERISTICS Practical Power Dissipation* Ptotp IC=10mA, VCE=1V IC=1A, VCE=1V* IC=5A, VCE=1V* IC=20A, VCE=1V* 450 450 400 100 300 300 250 40 PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ZTX869 ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VCBO 60 V VCEO 25 V VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) D.C. 150 t1 100 D=t1/tP MIN. TYP. UNIT CONDITIONS. V(BR)CBO 60 120 MAX. V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 60 120 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 25 35 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA D=0.2 Collector Cut-Off Current ICBO 50 1 µA nA VCB=50V VCB=50V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 µA nA VCB=50V VCB=50V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 25 50 100 180 50 80 200 220 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=5A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 880 950 mV IC=5A, IB=100mA* tP D=0.1 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-307 SYMBOL Collector-Base Breakdown Voltage D=0.6 50 0 0.0001 PARAMETER 3-306 ZTX869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 70 pF VCB=10V, f=1MHz PARAMETER SYMBOL Switching Times ton toff 60 680 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V Collector-Base Voltage Collector-Emitter Voltage *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Emitter-Base Voltage THERMAL CHARACTERISTICS Practical Power Dissipation* Ptotp IC=10mA, VCE=1V IC=1A, VCE=1V* IC=5A, VCE=1V* IC=20A, VCE=1V* 450 450 400 100 300 300 250 40 PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ZTX869 ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High Gain * Ptot=1.2 Watts C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VCBO 60 V VCEO 25 V VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) D.C. 150 t1 100 D=t1/tP MIN. TYP. UNIT CONDITIONS. V(BR)CBO 60 120 MAX. V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 60 120 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 25 35 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA D=0.2 Collector Cut-Off Current ICBO 50 1 µA nA VCB=50V VCB=50V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 µA nA VCB=50V VCB=50V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 25 50 100 180 50 80 200 220 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=5A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 880 950 mV IC=5A, IB=100mA* tP D=0.1 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-307 SYMBOL Collector-Base Breakdown Voltage D=0.6 50 0 0.0001 PARAMETER 3-306 ZTX869 TYPICAL CHARACTERISTICS 1.6 1.0 IC/IB=10 IC/IB=100 0.5 0 675 1.4 1.2 1.0 0.8 0.6 0.1 1 10 VCE=5V VCE=1V 225 0.4 0.2 0 0.01 450 100 0.01 IC - Collector Current (Amps) 0.1 IC - Collector Current (Amps) VCE(sat) v IC VCE=1V 2.0 VBE - (Volts) VBE(sat) - (Volts) hFE v IC IC/IB=100 IC/IB=10 2.0 1.5 1.0 0.5 0.01 0.1 1 10 100 1.0 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.1 0.001 IC - Collector Current (Amps) Single Pulse Test at Tamb=25°C 100 IC - Collector Current (Amps) 1.5 0.5 0.001 1 100 10 1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-308 100 hFE - Typical Gain hFE - Normalised Gain VCE(sat) - (Volts) 1.5