PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX968 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Static Forward Current Transfer Ratio hFE 300 300 200 150 450 450 300 240 50 Transition Frequency fT 80 Output Capacitance Cobo Switching Times ton toff MAX. UNIT CONDITIONS. IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* 1000 MHz IC=-100mA, VCE=-10V f=50MHz 161 pF VCB=-20V, f=1MHz 120 116 ns ns IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX968 ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High gain * Spice model available C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -15 Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -20 A Continuous Collector Current IC -4.5 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -15 -28 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 -20 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-12V VCB=-12V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -50 -100 -220 -100 -150 -300 mV mV mV IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-5A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -930 -1050 mV IC=-5A, IB=-200mA* Base-Emitter Turn-On Voltage VBE(on) -830 -1000 mV IC=-5A, VCE=-1V* D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-334 PARAMETER 3-333 MAX. PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX968 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Static Forward Current Transfer Ratio hFE 300 300 200 150 450 450 300 240 50 Transition Frequency fT 80 Output Capacitance Cobo Switching Times ton toff MAX. UNIT CONDITIONS. IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* 1000 MHz IC=-100mA, VCE=-10V f=50MHz 161 pF VCB=-20V, f=1MHz 120 116 ns ns IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX968 ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High gain * Spice model available C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -15 Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -20 A Continuous Collector Current IC -4.5 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -15 -28 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 -20 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-12V VCB=-12V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -50 -100 -220 -100 -150 -300 mV mV mV IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-5A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -930 -1050 mV IC=-5A, IB=-200mA* Base-Emitter Turn-On Voltage VBE(on) -830 -1000 mV IC=-5A, VCE=-1V* D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-334 PARAMETER 3-333 MAX. ZTX968 ZTX968 TYPICAL CHARACTERISTICS 0.8 0.8 +25 °C 0.6 0.6 IC/IB=250 IC/IB=200 IC/IB=100 IC/IB=50 IC/IB=10 0.4 0.2 0 0 1m 800 400 200 +100 °C +25 °C -55 °C 0.4 0.2 600 IC/IB=50 10m 100m 1 10 1m 100 10m IC - Collector Current (A) VCE(sat) v IC VCE=1V -55 °C +25 °C +100 °C 1.2 +25 °C 0.8 -55 °C 0.4 0 10m 100m 1 10 1m 100 10m I - Collector Current (Amps) VCE=1V -55 °C +25 °C +100 °C 0.7 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 0 1m 10m 100m 1 10 IC - Collector Current (A) VBE(on) v IC 1 10 100 VBE(sat) v IC 100 1.4 100m IC - Collector Current (A) hFE v IC Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 100 IC/IB=50 1.6 IC - Collector Current (A) Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 10 VCE(sat) v IC +100 °C 1m Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 1 IC - Collector Current (A) 0 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 100m 100 Single Pulse Test at Tamb=25°C 10 D.C. 1s 100ms 10ms 1 1.0ms 0.1ms 0.1 0.1 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100