SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ZUMD70-04 ZUMD70-05 ✪ ISSUE 1 - NOVEMBER 1998 . 1 1 1 3 2 3 2 2 3 SERIES PAIR COMMON CATHODE Device Type: ZUMD70-04 Device Type: ZUMD70-05 Partmarking Detail: D94 Partmarking Detail: D95 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j :T stg VALUE UNIT 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Breakdown Voltage V BR 70 Reverse Leakage Current IR Forward Voltage VF Forward Current IF Capacitance CT Effective Minority Lifetime (1) τ MAX. UNIT CONDITIONS. V I R =10µA 200 nA V R=50V 410 mV I F =1mA mA V F =1V 2.0 pF f=1MHz, V R=0 100 ps f=54MHz, I pk= 20mA (Krakauer Test Method) 15 (1) Sample Test For typical characteristics graphs see ZC2800E datasheet.