ONSEMI MMBD330T1G

MMBD330T1G,
MMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high-- efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT-- 323/SC-- 70 package which is designed for low-- power surface
mount applications.
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1
Features





Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD330T1
MMBD770T1
Forward Continuous Current (DC)
Nonrepetitive Peak Forward Current
(Note 1)
Forward Power Dissipation
TA = 25C
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
30
70
Vdc
IF
200
mA
IFSM
1.0
A
PF
120
mW
TJ
-- 55 to +125
C
Tstg
-- 55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
3
MARKING
DIAGRAMS
3
1
XX M G
G
2
SC-- 70/SOT-- 323
CASE 419
1
XX
= Specific Device Code
4T
= MMBD330T1
5H
= MMBD770T1
M
= Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBD330T1G
SC--70
(Pb--Free)
3000/Tape & Reel
MMBD770T1G
SC--70
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 5
1
Publication Order Number:
MMBD330T1/D
MMBD330T1G, MMBD770T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
MMBD330T1
MMBD770T1
Diode Capacitance
(VR = 15 Volts, f = 1.0 MHZ)
(VR = 20 Volts, f = 1.0 MHZ)
MMBD330T1
MMBD770T1
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
MMBD330T1
MMBD770T1
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
CT
IR
VF
MMBD330T1
MMBD770T1
Min
Typ
Max
30
70
---
---
---
0.9
0.5
1.5
1.0
---
13
9.0
200
200
-----
0.38
0.52
0.42
0.70
0.45
0.60
0.50
1.0
Unit
Volts
pF
nAdc
Vdc
TYPICAL CHARACTERISTICS
MMBD330T1
500
MMBD330T1
2.4
τ , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
2.8
f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
MMBD330T1
400
KRAKAUER METHOD
300
200
100
0
30
0
Figure 1. Total Capacitance
100
TA = 100C
TA = 75C
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
MMBD330T1
TA = - 40C
10
TA = 85C
1.0
TA = 25C
0.01
0.001
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
MMBD330T1
0.1
20
Figure 2. Minority Carrier Lifetime
10
1.0
10
24
0.1
30
TA = 25C
0.2
Figure 3. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
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2
1.0
1.2
MMBD330T1G, MMBD770T1G
TYPICAL CHARACTERISTICS
MMBD770T1
500
CT, TOTAL CAPACITANCE (pF)
MMBD770T1
1.6
τ , MINORITY CARRIER LIFETIME (ps)
2.0
f = 1.0 MHz
1.2
0.8
0.4
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
MMBD770T1
400
KRAKAUER METHOD
300
200
100
0
50
0
10
Figure 5. Total Capacitance
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
MMBD770T1
TA = 100C
TA = 75C
0.1
80
90
100
Figure 6. Minority Carrier Lifetime
10
1.0
30
50
70
40
60
IF, FORWARD CURRENT (mA)
20
MMBD770T1
10
TA = 85C
TA = - 40C
1.0
0.01
0.001
TA = 25C
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
0.1
50
Figure 7. Reverse Leakage
TA = 25C
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Forward Voltage
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1.6
2.0
MMBD330T1G, MMBD770T1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
c
A2
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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MMBD330T1/D