SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 300 150 10 CONDITIONS. MHz IC=-50mA, VCE=-10V* f=100MHz pF VCB=-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2% NOTE This data is derived from development material and does not necessarily mean that the device will go into production ZUMT591 DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications E C B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -80 V IC=-100µA, IE=-0 VCEO(sus) -60 V IC=-10mA*, IB=-0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=-0 Collector Cut-Off Current ICBO -100 nA VCB=-60V Collector Cut-Off Current ICES -100 nA VCE=-60V Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=-0 Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.6 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn On Voltage VBE(on) -1.0 V IC=-1A, VCE=-5V* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2% SEMICONDUCTORS SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 300 150 10 CONDITIONS. MHz IC=-50mA, VCE=-10V* f=100MHz pF VCB=-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2% NOTE This data is derived from development material and does not necessarily mean that the device will go into production ZUMT591 DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications E C B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -80 V IC=-100µA, IE=-0 VCEO(sus) -60 V IC=-10mA*, IB=-0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=-0 Collector Cut-Off Current ICBO -100 nA VCB=-60V Collector Cut-Off Current ICES -100 nA VCE=-60V Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=-0 Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.6 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn On Voltage VBE(on) -1.0 V IC=-1A, VCE=-5V* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2% SEMICONDUCTORS