NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature (°C) Collector-Base Voltage Transient Thermal Resistance Derating curve 0 0.1ms 1ms 10ms 100ms 1s 10s 100s -40 0 40 80 120 160 200 SPICE PARAMETERS *ZETEX ZTX1055A Spice model Last revision 25/1/95 * .MODEL ZTX1055A NPN IS=1.60E-12 NF=1.0 BF=500 IKF=4.0 VAF=120 + ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=15 + + ISC=5.0E-10 NC=1.7 RB=0.1 RE=0.040 RC=0.030 CJC=63.3E-12 CJE=512.6E-12 MJC=0.439 MJE=0.373 + VJC=0.511 VJE=0.800 TF=700E-12 TR=110E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 E E-Line TO92 Compatible re tu D=0.1 0.50 C B ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - (Watts) D=1(D.C) 160 100 ISSUE 3 JANUARY 1995 FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages 1.0 180 ZTX1055A Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. VALUE UNIT VCBO 175 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ZTX1055A ZTX1055A TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 175 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 280 V IC=100µA 175 280 V IC=100µA VCEO 120 150 V IC=10mA VCEV 175 0.8 0.8 +25°C 0.6 0.6 IC/IB=20 IC/IB=30 IC/IB=50 0.4 V 0.2 IC=100µA, VEB=1V 1mA Emitter-Base Breakdown V(BR)EBO Voltage 0.4 0.2 280 5 8.8 V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=130V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=130V Collector-Emitter Saturation Voltage VCE(sat) 22 120 220 50 160 310 mV mV mV IC=0.1A, IB=5mA* IC=1A, IB=20mA* IC=3A, IB=150mA* Base-Emitter Saturation Voltage VBE(sat) 950 1000 mV IC=3A, IB=150mA* Base-Emitter Turn-On Voltage VBE(on) 810 900 mV IC=3A, VCE=10V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 10mA 100mA 1A 10A 400 450 110 15 IC-Collector Current 1.0 +100°C 0.4 +100°C -55°C 200 0.2 100mA IC/IB=20 0.6 +25°C 400 10mA 130 Output Capacitance Cobo 17 Switching Times ton 90 toff 2400 MHz 30 IC=50mA, VCE=10V f=100MHz 1A +175°C 1mA 10A pF VCB=10V, f=1MHz ns IC=1A, IB=10mA, VCC=50V ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC=1A, IB=±10mA, VCC=50V 0.6 0.4 10 1A 10A Single Pulse Test Tamb=25C -55°C 1 +25°C +100°C 0.1 +175°C 0.2 1mA 100mA VBE(sat) v Ic VCE=10V 0.8 10mA IC-Collector Current hFE v IC 1.0 10A 0.8 -55°C +25°C 1mA 1A VCE(sat) v IC VCE=10V 600 100mA IC-Collector Current VCE(sat) v IC IC=10mA, VCE=10V* IC=1A, VCE=10V* IC=3A, VCE=10V* IC=6A, VCE=10V* 1200 10mA 1mA IC-Collector Current 275 300 50 -55°C +25°C +100°C +175°C IC/IB=20 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area 100V ZTX1055A ZTX1055A TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 175 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 280 V IC=100µA 175 280 V IC=100µA VCEO 120 150 V IC=10mA VCEV 175 0.8 0.8 +25°C 0.6 0.6 IC/IB=20 IC/IB=30 IC/IB=50 0.4 V 0.2 IC=100µA, VEB=1V 1mA Emitter-Base Breakdown V(BR)EBO Voltage 0.4 0.2 280 5 8.8 V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=130V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=130V Collector-Emitter Saturation Voltage VCE(sat) 22 120 220 50 160 310 mV mV mV IC=0.1A, IB=5mA* IC=1A, IB=20mA* IC=3A, IB=150mA* Base-Emitter Saturation Voltage VBE(sat) 950 1000 mV IC=3A, IB=150mA* Base-Emitter Turn-On Voltage VBE(on) 810 900 mV IC=3A, VCE=10V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 10mA 100mA 1A 10A 400 450 110 15 IC-Collector Current 1.0 +100°C 0.4 +100°C -55°C 200 0.2 100mA IC/IB=20 0.6 +25°C 400 10mA 130 Output Capacitance Cobo 17 Switching Times ton 90 toff 2400 MHz 30 IC=50mA, VCE=10V f=100MHz 1A +175°C 1mA 10A pF VCB=10V, f=1MHz ns IC=1A, IB=10mA, VCC=50V ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC=1A, IB=±10mA, VCC=50V 0.6 0.4 10 1A 10A Single Pulse Test Tamb=25C -55°C 1 +25°C +100°C 0.1 +175°C 0.2 1mA 100mA VBE(sat) v Ic VCE=10V 0.8 10mA IC-Collector Current hFE v IC 1.0 10A 0.8 -55°C +25°C 1mA 1A VCE(sat) v IC VCE=10V 600 100mA IC-Collector Current VCE(sat) v IC IC=10mA, VCE=10V* IC=1A, VCE=10V* IC=3A, VCE=10V* IC=6A, VCE=10V* 1200 10mA 1mA IC-Collector Current 275 300 50 -55°C +25°C +100°C +175°C IC/IB=20 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area 100V NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature (°C) Collector-Base Voltage Transient Thermal Resistance Derating curve 0 0.1ms 1ms 10ms 100ms 1s 10s 100s -40 0 40 80 120 160 200 SPICE PARAMETERS *ZETEX ZTX1055A Spice model Last revision 25/1/95 * .MODEL ZTX1055A NPN IS=1.60E-12 NF=1.0 BF=500 IKF=4.0 VAF=120 + ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=15 + + ISC=5.0E-10 NC=1.7 RB=0.1 RE=0.040 RC=0.030 CJC=63.3E-12 CJE=512.6E-12 MJC=0.439 MJE=0.373 + VJC=0.511 VJE=0.800 TF=700E-12 TR=110E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 E E-Line TO92 Compatible re tu D=0.1 0.50 C B ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - (Watts) D=1(D.C) 160 100 ISSUE 3 JANUARY 1995 FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages 1.0 180 ZTX1055A Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. VALUE UNIT VCBO 175 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C