ZVN0124A ID(on) -On -State Drain Current (Amps) ID(ON) On State Drain Current(Amps) TYPICAL CHARACTERISTICS 2.0 1.8 80µs pulse VGS=10V 8V 6V 5V 1.6 1.4 1.2 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 0 0 20 40 60 80 100 1.0 VGS=10V 7V 5V 0.8 4V 14 ID= 1A 12 10 8 6 4 500mA 2 100mA 0 0 2 4 6 8 10 ID(ON) -On-State Drain Current (Amps) VDS-Drain Source (Volts) 16 APPLICATIONS * Telephone handsets D G ABSOLUTE MAXIMUM RATINGS. 0.2 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 240 V 2V 0 0 2 4 6 8 10 Continuous Drain Current at T amb=25°C ID 160 mA VDS-Drain Source Voltage (Volts) Pulsed Drain Current I DM 2 A Saturation Characteristics Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C 2.0 1.8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.6 1.4 VDS=25V PARAMETER SYMBOL MIN. VDS=10V Drain-Source Breakdown Voltage BV DSS 240 Gate-Source Threshold Voltage V GS(th) 1 0.4 0.2 Gate-Body Leakage I GSS Zero Gate Voltage Drain Current I DSS On-State Drain Current(1) I D(on) 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 Transfer Characteristics Voltage Saturation Characteristics 2.4 500mA I00mA 1 10 Normalised RDS(on) and VGS(th) ID= 1A 1 UNIT CONDITIONS. V I D=1mA, V GS=0V V ID=1mA, V DS= V GS 20 nA V GS=± 20V, V DS=0V 10 100 µA µA V DS=240 V, V GS=0 V DS=192 V, V GS=0V, T=125°C (2) mA V DS=25 V, V GS=10V 16 Ω V GS=10V,I D=250mA mS V DS=25V,I D=250mA 3 500 Static Drain-Source On-State R DS(on) Resistance (1) 10 MAX. VGS-Gate Source Voltage (Volts) 100 20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage n) (o DS 2.2 2.0 1.8 1.6 e rc ou -S n ai Dr 1.4 1.2 e nc ta sis e R 1.0 0.8 Gate Threshold 0.6 0.4 0 -60 -40 -20 Forward Transconductance (1)(2) g fs 100 R VGS=10V ID=0.25A VGS=VDS ID=1mA Voltage VGS( th) 0 20 40 60 80 100 120 140 160 Temperature (°C) Normalised RDS(on) and VGS(th) V Temperature 3-351 S E-Line TO92 Compatible 3V VGS-Gate Source Voltage (Volts) RDS(ON) -Drain Source Resistance (Ω) ISSUE 1 – MARCH 94 FEATURES * 240 Volt VDS * RDS(on)=16Ω 0.4 Output Characteristics 18 ZVN0124A 0.6 VDS-Drain Source Voltage (Volts) 20 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 8 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-350 ( 3 ZVN0124A ID(on) -On -State Drain Current (Amps) ID(ON) On State Drain Current(Amps) TYPICAL CHARACTERISTICS 2.0 1.8 80µs pulse VGS=10V 8V 6V 5V 1.6 1.4 1.2 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 0 0 20 40 60 80 100 1.0 VGS=10V 7V 5V 0.8 4V 14 ID= 1A 12 10 8 6 4 500mA 2 100mA 0 0 2 4 6 8 10 ID(ON) -On-State Drain Current (Amps) VDS-Drain Source (Volts) 16 APPLICATIONS * Telephone handsets D G ABSOLUTE MAXIMUM RATINGS. 0.2 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 240 V 2V 0 0 2 4 6 8 10 Continuous Drain Current at T amb=25°C ID 160 mA VDS-Drain Source Voltage (Volts) Pulsed Drain Current I DM 2 A Saturation Characteristics Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C 2.0 1.8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.6 1.4 VDS=25V PARAMETER SYMBOL MIN. VDS=10V Drain-Source Breakdown Voltage BV DSS 240 Gate-Source Threshold Voltage V GS(th) 1 0.4 0.2 Gate-Body Leakage I GSS Zero Gate Voltage Drain Current I DSS On-State Drain Current(1) I D(on) 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 Transfer Characteristics Voltage Saturation Characteristics 2.4 500mA I00mA 1 10 Normalised RDS(on) and VGS(th) ID= 1A 1 UNIT CONDITIONS. V I D=1mA, V GS=0V V ID=1mA, V DS= V GS 20 nA V GS=± 20V, V DS=0V 10 100 µA µA V DS=240 V, V GS=0 V DS=192 V, V GS=0V, T=125°C (2) mA V DS=25 V, V GS=10V 16 Ω V GS=10V,I D=250mA mS V DS=25V,I D=250mA 3 500 Static Drain-Source On-State R DS(on) Resistance (1) 10 MAX. VGS-Gate Source Voltage (Volts) 100 20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage n) (o DS 2.2 2.0 1.8 1.6 e rc ou -S n ai Dr 1.4 1.2 e nc ta sis e R 1.0 0.8 Gate Threshold 0.6 0.4 0 -60 -40 -20 Forward Transconductance (1)(2) g fs 100 R VGS=10V ID=0.25A VGS=VDS ID=1mA Voltage VGS( th) 0 20 40 60 80 100 120 140 160 Temperature (°C) Normalised RDS(on) and VGS(th) V Temperature 3-351 S E-Line TO92 Compatible 3V VGS-Gate Source Voltage (Volts) RDS(ON) -Drain Source Resistance (Ω) ISSUE 1 – MARCH 94 FEATURES * 240 Volt VDS * RDS(on)=16Ω 0.4 Output Characteristics 18 ZVN0124A 0.6 VDS-Drain Source Voltage (Volts) 20 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 8 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-350 ( 3 ZVN0124A gfs-Forward transconductance (mS) gfs-Forward transconductance (mS) TYPICAL CHARACTERISTICS 500 400 VDS= 25V 300 200 100 0 0 0.2 0.4 0.6 0.8 1.0 500 400 300 VDS= 25V 200 100 0 0 2 ID(On)-Drain Current (Amps) Transconductance v drain current VGS-Gate-Source Voltage (Volts) Ciss 60 C-Capacitance (pF) 50 40 30 20 10 Coss Crss 0 10 20 30 40 50 VDS -Drain-Source Voltage (Volts) PD-Power Dissipation (Watts) 0.8 0.6 0.4 0.2 60 10 VDS= 50V 100V 10 ID=700mA 180V 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Gate charge v gate-source voltage 1.0 40 .8 Q-Charge (nC) Capacitance v drain-source voltage .20 6 Transconductance v gate-source voltage 70 0 4 VGS-Gate-Source Voltage (Volts) 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C) Power v temperature derating curve (ambient) 3-352 2.0