DIODES ZVN0124A

ZVN0124A
ID(on) -On -State Drain Current (Amps)
ID(ON) On State Drain Current(Amps)
TYPICAL CHARACTERISTICS
2.0
1.8
80µs pulse
VGS=10V
8V
6V
5V
1.6
1.4
1.2
1.0
0.8
4V
0.6
0.4
3V
0.2
2V
0
0
20
40
60
80
100
1.0
VGS=10V
7V
5V
0.8
4V
14
ID=
1A
12
10
8
6
4
500mA
2
100mA
0
0
2
4
6
8
10
ID(ON) -On-State Drain Current (Amps)
VDS-Drain Source (Volts)
16
APPLICATIONS
* Telephone handsets
D
G
ABSOLUTE MAXIMUM RATINGS.
0.2
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
240
V
2V
0
0
2
4
6
8
10
Continuous Drain Current at T amb=25°C
ID
160
mA
VDS-Drain Source Voltage (Volts)
Pulsed Drain Current
I DM
2
A
Saturation Characteristics
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
700
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
2.0
1.8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.6
1.4
VDS=25V
PARAMETER
SYMBOL MIN.
VDS=10V
Drain-Source Breakdown
Voltage
BV DSS
240
Gate-Source Threshold
Voltage
V GS(th)
1
0.4
0.2
Gate-Body Leakage
I GSS
Zero Gate Voltage Drain
Current
I DSS
On-State Drain Current(1)
I D(on)
1.2
1.0
0.8
0.6
0
0
2
4
6
8
10
Transfer Characteristics
Voltage Saturation Characteristics
2.4
500mA
I00mA
1
10
Normalised RDS(on) and VGS(th)
ID=
1A
1
UNIT CONDITIONS.
V
I D=1mA, V GS=0V
V
ID=1mA, V DS= V GS
20
nA
V GS=± 20V, V DS=0V
10
100
µA
µA
V DS=240 V, V GS=0
V DS=192 V, V GS=0V,
T=125°C (2)
mA
V DS=25 V, V GS=10V
16
Ω
V GS=10V,I D=250mA
mS
V DS=25V,I D=250mA
3
500
Static Drain-Source On-State R DS(on)
Resistance (1)
10
MAX.
VGS-Gate Source Voltage (Volts)
100
20
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
n)
(o
DS
2.2
2.0
1.8
1.6
e
rc
ou
-S
n
ai
Dr
1.4
1.2
e
nc
ta
sis
e
R
1.0
0.8
Gate Threshold
0.6
0.4
0
-60 -40 -20
Forward Transconductance
(1)(2)
g fs
100
R
VGS=10V
ID=0.25A
VGS=VDS
ID=1mA
Voltage VGS(
th)
0 20 40 60 80 100 120 140 160
Temperature (°C)
Normalised RDS(on) and VGS(th) V Temperature
3-351
S
E-Line
TO92 Compatible
3V
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt VDS
* RDS(on)=16Ω
0.4
Output Characteristics
18
ZVN0124A
0.6
VDS-Drain Source Voltage (Volts)
20
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
Input Capacitance (2)
C iss
85
pF
Common Source Output
Capacitance (2)
C oss
20
pF
Reverse Transfer
Capacitance (2)
C rss
7
pF
Turn-On Delay Time (2)(3)
t d(on)
7
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
t d(off)
16
ns
Fall Time (2)(3)
tf
8
ns
V DS=25 V, V GS=0V, f=1MHz
V DD ≈25V, I D=250mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
3-350
(
3
ZVN0124A
ID(on) -On -State Drain Current (Amps)
ID(ON) On State Drain Current(Amps)
TYPICAL CHARACTERISTICS
2.0
1.8
80µs pulse
VGS=10V
8V
6V
5V
1.6
1.4
1.2
1.0
0.8
4V
0.6
0.4
3V
0.2
2V
0
0
20
40
60
80
100
1.0
VGS=10V
7V
5V
0.8
4V
14
ID=
1A
12
10
8
6
4
500mA
2
100mA
0
0
2
4
6
8
10
ID(ON) -On-State Drain Current (Amps)
VDS-Drain Source (Volts)
16
APPLICATIONS
* Telephone handsets
D
G
ABSOLUTE MAXIMUM RATINGS.
0.2
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
240
V
2V
0
0
2
4
6
8
10
Continuous Drain Current at T amb=25°C
ID
160
mA
VDS-Drain Source Voltage (Volts)
Pulsed Drain Current
I DM
2
A
Saturation Characteristics
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
700
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
2.0
1.8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.6
1.4
VDS=25V
PARAMETER
SYMBOL MIN.
VDS=10V
Drain-Source Breakdown
Voltage
BV DSS
240
Gate-Source Threshold
Voltage
V GS(th)
1
0.4
0.2
Gate-Body Leakage
I GSS
Zero Gate Voltage Drain
Current
I DSS
On-State Drain Current(1)
I D(on)
1.2
1.0
0.8
0.6
0
0
2
4
6
8
10
Transfer Characteristics
Voltage Saturation Characteristics
2.4
500mA
I00mA
1
10
Normalised RDS(on) and VGS(th)
ID=
1A
1
UNIT CONDITIONS.
V
I D=1mA, V GS=0V
V
ID=1mA, V DS= V GS
20
nA
V GS=± 20V, V DS=0V
10
100
µA
µA
V DS=240 V, V GS=0
V DS=192 V, V GS=0V,
T=125°C (2)
mA
V DS=25 V, V GS=10V
16
Ω
V GS=10V,I D=250mA
mS
V DS=25V,I D=250mA
3
500
Static Drain-Source On-State R DS(on)
Resistance (1)
10
MAX.
VGS-Gate Source Voltage (Volts)
100
20
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
n)
(o
DS
2.2
2.0
1.8
1.6
e
rc
ou
-S
n
ai
Dr
1.4
1.2
e
nc
ta
sis
e
R
1.0
0.8
Gate Threshold
0.6
0.4
0
-60 -40 -20
Forward Transconductance
(1)(2)
g fs
100
R
VGS=10V
ID=0.25A
VGS=VDS
ID=1mA
Voltage VGS(
th)
0 20 40 60 80 100 120 140 160
Temperature (°C)
Normalised RDS(on) and VGS(th) V Temperature
3-351
S
E-Line
TO92 Compatible
3V
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt VDS
* RDS(on)=16Ω
0.4
Output Characteristics
18
ZVN0124A
0.6
VDS-Drain Source Voltage (Volts)
20
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
Input Capacitance (2)
C iss
85
pF
Common Source Output
Capacitance (2)
C oss
20
pF
Reverse Transfer
Capacitance (2)
C rss
7
pF
Turn-On Delay Time (2)(3)
t d(on)
7
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
t d(off)
16
ns
Fall Time (2)(3)
tf
8
ns
V DS=25 V, V GS=0V, f=1MHz
V DD ≈25V, I D=250mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
3-350
(
3
ZVN0124A
gfs-Forward transconductance (mS)
gfs-Forward transconductance (mS)
TYPICAL CHARACTERISTICS
500
400
VDS=
25V
300
200
100
0
0
0.2
0.4
0.6
0.8
1.0
500
400
300
VDS=
25V
200
100
0
0
2
ID(On)-Drain Current (Amps)
Transconductance v drain current
VGS-Gate-Source Voltage (Volts)
Ciss
60
C-Capacitance (pF)
50
40
30
20
10
Coss
Crss
0
10
20
30
40
50
VDS -Drain-Source Voltage (Volts)
PD-Power Dissipation (Watts)
0.8
0.6
0.4
0.2
60
10
VDS=
50V
100V
10
ID=700mA
180V
8
6
4
2
0
0
0.2
0.4
0.6
0.8 1.0
1.2
1.4
1.6
1.8
Gate charge v gate-source voltage
1.0
40
.8
Q-Charge (nC)
Capacitance v drain-source voltage
.20
6
Transconductance v gate-source voltage
70
0
4
VGS-Gate-Source Voltage (Volts)
80 100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
Power v temperature derating curve (ambient)
3-352
2.0