ZVN1409A TYPICAL CHARACTERISTICS 70 50 ID-Drain Current (mA) ID-Drain Current (mA) 40 VGS= 10V 8V 30 6V 20 5V VGS= 10V 60 50 8V 40 6V 30 5V 20 4V 10 3V 0 10 20 30 40 50 0 6 8 10 Output Characteristics Saturation Characteristics 50 8 6 4 ID= 24mA 2 18mA 12mA ID-Drain Current (mA) VDS-Drain Source Voltage (Volts) 4 VDS - Drain Source Voltage (Volts) 4 6 8 20 10 0 10 VGS=4V 5V 4 6 8 10 Transfer Characteristics 6V 8V 10V 2.4 500 100 10 100 Normalised RDS(on) and VGS(th) 1000 1 2 VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics ID-Drain Current (mA) On-resistance v drain current 2.2 n) (o DS 2.0 1.8 1.6 r ou -S ain r D 1.4 1.2 eR nc ta VGS=10V sis e R ID=5mA ce 1.0 Gate Thresh old 0.8 VGS=VDS ID=1mA Voltage VGS (th ) 0.6 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj-Junction Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3-359 ISSUE 2 – MARCH 94 FEATURES * 90 Volt VDS * Low input capacitance * Fast switching D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 90 UNIT V Continuous Drain Current ID 10 mA mA Pulsed Drain Current I DM 40 Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 30 0 2 VDS= 10V 40 VGS-Gate Source Voltage (Volts) RDS-Drain Source Resistance (Ω) 2 VDS - Drain Source Voltage (Volts) 10 ZVN1409A 4V 10 3V 0 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 90 Gate-Source Breakdown Voltage V GS(th) 0.8 Gate Body Leakage Zero Gate Voltage Drain Current UNIT CONDITIONS. V I D=0.1mA, V GS=0V 2.4 V ID=0.1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V I DSS 1 µA 100 (2) µA On State Drain Current (1) I D(on) Static Drain Source On State Resistance (1) R DS(on) Forward Transconductance (1)( g fs 2) MAX. 10 250 2 mA V DS=25 V, V GS=10V Ω V GS=10V,I D=5mA mS V DS=25V,I D=10mA Input Capacitance (2) C iss 6.5 pF Common Source Output Capacitance (2) C oss 3 pF Reverse Transfer Capacitance (2) C rss 0.65 pF Turn-On Delay Time (2)(3)(4) t d(on) 0.3 ns Rise Time (2)(3)(4) tr 0.5 ns Turn-Off Delay Time (2)(3)(4) t d(off) 0.35 ns Fall Time (2)(3)(4) tf 0.5 ns 3-358 V DS=90V, V GS=0V V DS=72V, V GS=0V, T=125°C V DS=25 V, V GS=0V f=1MHz V DD ≈25V, I D=5mA ( 1 ZVN1409A TYPICAL CHARACTERISTICS 70 50 ID-Drain Current (mA) ID-Drain Current (mA) 40 VGS= 10V 8V 30 6V 20 5V VGS= 10V 60 50 8V 40 6V 30 5V 20 4V 10 3V 0 10 20 30 40 50 0 6 8 10 Output Characteristics Saturation Characteristics 50 8 6 4 ID= 24mA 2 18mA 12mA ID-Drain Current (mA) VDS-Drain Source Voltage (Volts) 4 VDS - Drain Source Voltage (Volts) 4 6 8 20 10 0 10 VGS=4V 5V 4 6 8 10 Transfer Characteristics 6V 8V 10V 2.4 500 100 10 100 Normalised RDS(on) and VGS(th) 1000 1 2 VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics ID-Drain Current (mA) On-resistance v drain current 2.2 n) (o DS 2.0 1.8 1.6 r ou -S ain r D 1.4 1.2 eR nc ta VGS=10V sis e R ID=5mA ce 1.0 Gate Thresh old 0.8 VGS=VDS ID=1mA Voltage VGS (th ) 0.6 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj-Junction Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3-359 ISSUE 2 – MARCH 94 FEATURES * 90 Volt VDS * Low input capacitance * Fast switching D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 90 UNIT V Continuous Drain Current ID 10 mA mA Pulsed Drain Current I DM 40 Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 30 0 2 VDS= 10V 40 VGS-Gate Source Voltage (Volts) RDS-Drain Source Resistance (Ω) 2 VDS - Drain Source Voltage (Volts) 10 ZVN1409A 4V 10 3V 0 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 90 Gate-Source Breakdown Voltage V GS(th) 0.8 Gate Body Leakage Zero Gate Voltage Drain Current UNIT CONDITIONS. V I D=0.1mA, V GS=0V 2.4 V ID=0.1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V I DSS 1 µA 100 (2) µA On State Drain Current (1) I D(on) Static Drain Source On State Resistance (1) R DS(on) Forward Transconductance (1)( g fs 2) MAX. 10 250 2 mA V DS=25 V, V GS=10V Ω V GS=10V,I D=5mA mS V DS=25V,I D=10mA Input Capacitance (2) C iss 6.5 pF Common Source Output Capacitance (2) C oss 3 pF Reverse Transfer Capacitance (2) C rss 0.65 pF Turn-On Delay Time (2)(3)(4) t d(on) 0.3 ns Rise Time (2)(3)(4) tr 0.5 ns Turn-Off Delay Time (2)(3)(4) t d(off) 0.35 ns Fall Time (2)(3)(4) tf 0.5 ns 3-358 V DS=90V, V GS=0V V DS=72V, V GS=0V, T=125°C V DS=25 V, V GS=0V f=1MHz V DD ≈25V, I D=5mA ( 1 ZVN1409A TYPICAL CHARACTERISTICS 10 gfs-Transconductance (mS) gfs-Transconductance (mS) 10 8 6 VDS=10V 4 2 0 0 10 20 30 40 VDS=10V 8 6 4 2 0 2 0 50 4 6 8 10 VGS-Gate Source Voltage (Volts) ID(on)- Drain Current (mA) Transconductance v drain current Transconductance v gate-source voltage C-Capacitance (pF) 8 6 4 Coss Ciss 2 Crss 0 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) 16 10 14 ID=25mA 12 VDS= 30V 60V 90V 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Q-Charge (nC) VDS-Drain Source Voltage (Volts) Gate charge v gate-source voltage Capacitance v drain-source voltage 3-360