ZETEX ZVN1409A

ZVN1409A
TYPICAL CHARACTERISTICS
70
50
ID-Drain Current (mA)
ID-Drain Current (mA)
40
VGS=
10V
8V
30
6V
20
5V
VGS=
10V
60
50
8V
40
6V
30
5V
20
4V
10
3V
0
10
20
30
40
50
0
6
8
10
Output Characteristics
Saturation Characteristics
50
8
6
4
ID=
24mA
2
18mA
12mA
ID-Drain Current (mA)
VDS-Drain Source Voltage (Volts)
4
VDS - Drain Source Voltage (Volts)
4
6
8
20
10
0
10
VGS=4V 5V
4
6
8
10
Transfer Characteristics
6V 8V 10V
2.4
500
100
10
100
Normalised RDS(on) and VGS(th)
1000
1
2
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
ID-Drain Current (mA)
On-resistance v drain current
2.2
n)
(o
DS
2.0
1.8
1.6
r
ou
-S
ain
r
D
1.4
1.2
eR
nc
ta
VGS=10V
sis
e
R
ID=5mA
ce
1.0
Gate Thresh
old
0.8
VGS=VDS
ID=1mA
Voltage VGS
(th
)
0.6
0.4
-80 -60 -40 -20
0 20 40 60 80 100 120 140 160
Tj-Junction Temperature (C°)
Normalised RDS(on) and VGS(th) vs Temperature
3-359
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt VDS
* Low input capacitance
* Fast switching
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DS
VALUE
90
UNIT
V
Continuous Drain Current
ID
10
mA
mA
Pulsed Drain Current
I DM
40
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
625
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
30
0
2
VDS=
10V
40
VGS-Gate Source Voltage (Volts)
RDS-Drain Source Resistance (Ω)
2
VDS - Drain Source Voltage (Volts)
10
ZVN1409A
4V
10
3V
0
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown
Voltage
BV DSS
90
Gate-Source Breakdown
Voltage
V GS(th)
0.8
Gate Body Leakage
Zero Gate Voltage Drain
Current
UNIT
CONDITIONS.
V
I D=0.1mA, V GS=0V
2.4
V
ID=0.1mA, V DS= V GS
I GSS
100
nA
V GS=± 20V, V DS=0V
I DSS
1
µA
100 (2) µA
On State Drain Current (1)
I D(on)
Static Drain Source On State
Resistance (1)
R DS(on)
Forward Transconductance (1)( g fs
2)
MAX.
10
250
2
mA
V DS=25 V, V GS=10V
Ω
V GS=10V,I D=5mA
mS
V DS=25V,I D=10mA
Input Capacitance (2)
C iss
6.5
pF
Common Source Output
Capacitance (2)
C oss
3
pF
Reverse Transfer Capacitance
(2)
C rss
0.65
pF
Turn-On Delay Time (2)(3)(4)
t d(on)
0.3
ns
Rise Time (2)(3)(4)
tr
0.5
ns
Turn-Off Delay Time (2)(3)(4)
t d(off)
0.35
ns
Fall Time (2)(3)(4)
tf
0.5
ns
3-358
V DS=90V, V GS=0V
V DS=72V, V GS=0V,
T=125°C
V DS=25 V, V GS=0V
f=1MHz
V DD ≈25V, I D=5mA
(
1
ZVN1409A
TYPICAL CHARACTERISTICS
70
50
ID-Drain Current (mA)
ID-Drain Current (mA)
40
VGS=
10V
8V
30
6V
20
5V
VGS=
10V
60
50
8V
40
6V
30
5V
20
4V
10
3V
0
10
20
30
40
50
0
6
8
10
Output Characteristics
Saturation Characteristics
50
8
6
4
ID=
24mA
2
18mA
12mA
ID-Drain Current (mA)
VDS-Drain Source Voltage (Volts)
4
VDS - Drain Source Voltage (Volts)
4
6
8
20
10
0
10
VGS=4V 5V
4
6
8
10
Transfer Characteristics
6V 8V 10V
2.4
500
100
10
100
Normalised RDS(on) and VGS(th)
1000
1
2
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
ID-Drain Current (mA)
On-resistance v drain current
2.2
n)
(o
DS
2.0
1.8
1.6
r
ou
-S
ain
r
D
1.4
1.2
eR
nc
ta
VGS=10V
sis
e
R
ID=5mA
ce
1.0
Gate Thresh
old
0.8
VGS=VDS
ID=1mA
Voltage VGS
(th
)
0.6
0.4
-80 -60 -40 -20
0 20 40 60 80 100 120 140 160
Tj-Junction Temperature (C°)
Normalised RDS(on) and VGS(th) vs Temperature
3-359
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt VDS
* Low input capacitance
* Fast switching
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DS
VALUE
90
UNIT
V
Continuous Drain Current
ID
10
mA
mA
Pulsed Drain Current
I DM
40
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
625
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
30
0
2
VDS=
10V
40
VGS-Gate Source Voltage (Volts)
RDS-Drain Source Resistance (Ω)
2
VDS - Drain Source Voltage (Volts)
10
ZVN1409A
4V
10
3V
0
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown
Voltage
BV DSS
90
Gate-Source Breakdown
Voltage
V GS(th)
0.8
Gate Body Leakage
Zero Gate Voltage Drain
Current
UNIT
CONDITIONS.
V
I D=0.1mA, V GS=0V
2.4
V
ID=0.1mA, V DS= V GS
I GSS
100
nA
V GS=± 20V, V DS=0V
I DSS
1
µA
100 (2) µA
On State Drain Current (1)
I D(on)
Static Drain Source On State
Resistance (1)
R DS(on)
Forward Transconductance (1)( g fs
2)
MAX.
10
250
2
mA
V DS=25 V, V GS=10V
Ω
V GS=10V,I D=5mA
mS
V DS=25V,I D=10mA
Input Capacitance (2)
C iss
6.5
pF
Common Source Output
Capacitance (2)
C oss
3
pF
Reverse Transfer Capacitance
(2)
C rss
0.65
pF
Turn-On Delay Time (2)(3)(4)
t d(on)
0.3
ns
Rise Time (2)(3)(4)
tr
0.5
ns
Turn-Off Delay Time (2)(3)(4)
t d(off)
0.35
ns
Fall Time (2)(3)(4)
tf
0.5
ns
3-358
V DS=90V, V GS=0V
V DS=72V, V GS=0V,
T=125°C
V DS=25 V, V GS=0V
f=1MHz
V DD ≈25V, I D=5mA
(
1
ZVN1409A
TYPICAL CHARACTERISTICS
10
gfs-Transconductance (mS)
gfs-Transconductance (mS)
10
8
6
VDS=10V
4
2
0
0
10
20
30
40
VDS=10V
8
6
4
2
0
2
0
50
4
6
8
10
VGS-Gate Source Voltage (Volts)
ID(on)- Drain Current (mA)
Transconductance v drain current
Transconductance v gate-source voltage
C-Capacitance (pF)
8
6
4
Coss
Ciss
2
Crss
0
0
10
20
30
40
50
VGS-Gate Source Voltage (Volts)
16
10
14
ID=25mA
12
VDS= 30V
60V
90V
10
8
6
4
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q-Charge (nC)
VDS-Drain Source Voltage (Volts)
Gate charge v gate-source voltage
Capacitance v drain-source voltage
3-360