ZVN2110A VGS= 10V 9V 2.0 1.6 ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 0 0 20 40 60 80 100 1.6 4V 0.4 3V 0 2 ID= 1A 2 500mA 100mA 0 6 8 10 ID(on) -On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 4 4 8 10 2.4 VDS=25V 2.0 VDS=10V 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 2.4 10 5 ID= 1A 500mA 100mA 1 10 100 Normalised RDS(on) and VGS(th) RDS(on)-Drain Source Resistance (Ω) 6 2.8 VGS-Gate Source Voltage (Volts) 1 4 Saturation Characteristics 6 2 D G VGS-Gate Source Voltage (Volts) On-resistance v gate-source voltage 2.2 n) (o DS 2.0 1.8 1.6 rc ou -S in a Dr 1.4 1.2 1.0 e eR eR nc ta sis VGS=10V ID=1 A VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature S E-Line TO92 Compatible 0.8 Output Characteristics 8 ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω 5V VDS - Drain Source Voltage (Volts) 10 ZVN2110A 1.2 VDS - Drain Source Voltage (Volts) 0 VGS= 10V 9V 8V 7V 6V 2.0 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 320 mA Pulsed Drain Current I DM 6 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 1 100 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) A V DS=25V, V GS=10V Ω V GS=10V,I D=1A mS V DS=25V,I D=1A On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs 1.5 4 250 Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 13 ns Fall Time (2)(3) tf 13 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-365 3 ) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ZVN2110A VGS= 10V 9V 2.0 1.6 ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 0 0 20 40 60 80 100 1.6 4V 0.4 3V 0 2 ID= 1A 2 500mA 100mA 0 6 8 10 ID(on) -On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 4 4 8 10 2.4 VDS=25V 2.0 VDS=10V 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 2.4 10 5 ID= 1A 500mA 100mA 1 10 100 Normalised RDS(on) and VGS(th) RDS(on)-Drain Source Resistance (Ω) 6 2.8 VGS-Gate Source Voltage (Volts) 1 4 Saturation Characteristics 6 2 D G VGS-Gate Source Voltage (Volts) On-resistance v gate-source voltage 2.2 n) (o DS 2.0 1.8 1.6 rc ou -S in a Dr 1.4 1.2 1.0 e eR eR nc ta sis VGS=10V ID=1 A VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 3-365 S E-Line TO92 Compatible 0.8 Output Characteristics 8 ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω 5V VDS - Drain Source Voltage (Volts) 10 ZVN2110A 1.2 VDS - Drain Source Voltage (Volts) 0 VGS= 10V 9V 8V 7V 6V 2.0 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 320 mA Pulsed Drain Current I DM 6 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 1 100 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) A V DS=25V, V GS=10V Ω V GS=10V,I D=1A mS V DS=25V,I D=1A On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs 1.5 4 250 Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 13 ns Fall Time (2)(3) tf 13 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-364 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) ZVN2110A TYPICAL CHARACTERISTICS 500 gfs-Transconductance (mS) gfs-Transconductance (mS) 500 400 300 VDS=25V 200 100 0 0 0.2 0.4 0.6 0.8 400 300 VDS=25V 200 100 0 0 1.0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) ID(on)- Drain Current (Amps) Transconductance v drain current Transconductance v gate-source voltage C-Capacitance (pF) 80 60 Ciss 40 20 Coss Crss 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) 16 100 14 ID=1A 12 VDS= 20V 50V 80V 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) VDS-Drain Source Voltage (Volts) Gate charge v gate-source voltage Capacitance v drain-source voltage 3-366