SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110G VGS= 10V 9V 2.0 1.6 ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 0 0 20 40 60 80 100 1.6 1.2 5V 4 ID= 1A 2 500mA 100mA 0 0 2 4 6 8 10 ID(on) -On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 6 0.4 3V 0 2 8 10 5 ID= 1A 500mA 100mA 10 PARTMARKING DETAIL COMPLEMENTARY TYPE - 100 On-resistance v gate-source voltage G PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 100 UNIT V Continuous Drain Current at T amb=25°C ID 500 mA Pulsed Drain Current I DM 6 A Saturation Characteristics Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS=25V 2.0 VDS=10V 1.6 1.2 0.8 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS 0.4 0 0 2 4 6 8 2.2 n) (o DS 2.0 1.8 1.6 rc ou -S ain Dr 1.4 1.2 1.0 eR nc ta sis e eR VGS=10V ID=1 A VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0.8 0.6 -40 -20 0 V 0.1 10 Transfer Characteristics VGS-Gate Source Voltage (Volts) D ZVN2110 ZVP2110G VDS - Drain Source Voltage (Volts) 2.4 1 S On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) VGS-Gate Source Voltage (Volts) Normalised RDS(on) and VGS(th) RDS(on)-Drain Source Resistance (Ω) 6 2.4 Voltage Saturation Characteristics 1 4 2.8 VGS-Gate Source Voltage (Volts) 10 D 4V Output Characteristics 8 ISSUE 3 – OCTOBER 1995 ✪ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ABSOLUTE MAXIMUM RATINGS. 0.8 VDS - Drain Source Voltage (Volts) 10 VGS= 10V 9V 8V 7V 6V 2.0 ZVN2110G 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 1.5 2.4 V ID=1mA, VDS= VGS 20 nA VGS=± 20V, VDS=0V 1 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) 2 4 250 350 A VDS=25V, VGS=10V Ω VGS=10V, ID=1A mS VDS=25V, ID=1A Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 59 75 pF Common Source Output Capacitance (2) Coss 16 25 pF Reverse Transfer Capacitance (2) Crss 4 8 pF Turn-On Delay Time (2)(3) td(on) 4 7 ns Rise Time (2)(3) tr 4 8 ns Turn-Off Delay Time (2)(3) td(off) 8 13 ns Fall Time (2)(3) tf 8 13 ns VDS=25 V, VGS=0V, f=1MHz VDD ≈25V, ID=1A DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER SYMBOL Diode Forward Voltage (1) V SD MIN. TYP. MAX. UNIT 0.82 V I S=0.32A, V GS=0 CONDITIONS. Reverse Recovery Time T RR 112 ns I F=0.32A, V GS=0, I R=0.1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 388 3 - 387 SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110G VGS= 10V 9V 2.0 1.6 ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 0 0 20 40 60 80 100 1.6 1.2 5V 4 ID= 1A 2 500mA 100mA 0 0 2 4 6 8 10 ID(on) -On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 6 0.4 3V 0 2 8 10 5 ID= 1A 500mA 100mA 10 PARTMARKING DETAIL COMPLEMENTARY TYPE - 100 On-resistance v gate-source voltage G PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 100 UNIT V Continuous Drain Current at T amb=25°C ID 500 mA Pulsed Drain Current I DM 6 A Saturation Characteristics Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS=25V 2.0 VDS=10V 1.6 1.2 0.8 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS 0.4 0 0 2 4 6 8 2.2 n) (o DS 2.0 1.8 1.6 rc ou -S ain Dr 1.4 1.2 1.0 eR nc ta sis e eR VGS=10V ID=1 A VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0.8 0.6 -40 -20 0 V 0.1 10 Transfer Characteristics VGS-Gate Source Voltage (Volts) D ZVN2110 ZVP2110G VDS - Drain Source Voltage (Volts) 2.4 1 S On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) VGS-Gate Source Voltage (Volts) Normalised RDS(on) and VGS(th) RDS(on)-Drain Source Resistance (Ω) 6 2.4 Voltage Saturation Characteristics 1 4 2.8 VGS-Gate Source Voltage (Volts) 10 D 4V Output Characteristics 8 ISSUE 3 – OCTOBER 1995 ✪ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ABSOLUTE MAXIMUM RATINGS. 0.8 VDS - Drain Source Voltage (Volts) 10 VGS= 10V 9V 8V 7V 6V 2.0 ZVN2110G 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 1.5 2.4 V ID=1mA, VDS= VGS 20 nA VGS=± 20V, VDS=0V 1 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) 2 4 250 350 A VDS=25V, VGS=10V Ω VGS=10V, ID=1A mS VDS=25V, ID=1A Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 59 75 pF Common Source Output Capacitance (2) Coss 16 25 pF Reverse Transfer Capacitance (2) Crss 4 8 pF Turn-On Delay Time (2)(3) td(on) 4 7 ns Rise Time (2)(3) tr 4 8 ns Turn-Off Delay Time (2)(3) td(off) 8 13 ns Fall Time (2)(3) tf 8 13 ns VDS=25 V, VGS=0V, f=1MHz VDD ≈25V, ID=1A DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER SYMBOL Diode Forward Voltage (1) V SD MIN. TYP. MAX. UNIT 0.82 V I S=0.32A, V GS=0 CONDITIONS. Reverse Recovery Time T RR 112 ns I F=0.32A, V GS=0, I R=0.1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 388 3 - 387 ZVN2110G TYPICAL CHARACTERISTICS 500 gfs-Transconductance (mS) gfs-Transconductance (mS) 500 400 300 VDS=25V 200 100 0 0 0.2 0.4 0.6 0.8 400 300 VDS=25V 200 100 0 1.0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) ID(on)- Drain Current (Amps) Transconductance v drain current Transconductance v gate-source voltage C-Capacitance (pF) 80 60 Ciss 40 20 Coss Crss 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) 16 100 14 ID=1A 12 VDS= 20V 50V 80V 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) VDS-Drain Source Voltage (Volts) Gate charge v gate-source voltage Capacitance v drain-source voltage 3 - 389