DIODES ZVN2110G

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN2110G
VGS=
10V
9V
2.0
1.6
ID(on) -On-State Drain Current (Amps)
ID(on) -On-State Drain Current (Amps)
TYPICAL CHARACTERISTICS
8V
7V
1.2
6V
0.8
5V
4V
0.4
3V
0
0
20
40
60
80
100
1.6
1.2
5V
4
ID=
1A
2
500mA
100mA
0
0
2
4
6
8
10
ID(on) -On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
6
0.4
3V
0
2
8
10
5
ID=
1A
500mA
100mA
10
PARTMARKING DETAIL COMPLEMENTARY TYPE -
100
On-resistance v gate-source voltage
G
PARAMETER
SYMBOL
Drain-Source Voltage
V DS
VALUE
100
UNIT
V
Continuous Drain Current at T amb=25°C
ID
500
mA
Pulsed Drain Current
I DM
6
A
Saturation Characteristics
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
Operating and Storage Temperature Range
T j:T stg
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VDS=25V
2.0
VDS=10V
1.6
1.2
0.8
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
CONDITIONS.
Drain-Source Breakdown Voltage
BVDSS
100
ID=1mA, VGS=0V
Gate-Source Threshold Voltage
VGS(th)
0.8
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
0.4
0
0
2
4
6
8
2.2
n)
(o
DS
2.0
1.8
1.6
rc
ou
-S
ain
Dr
1.4
1.2
1.0
eR
nc
ta
sis
e
eR
VGS=10V
ID=1 A
VGS=VDS
ID=1mA
Gate Threshold Voltage VGS(TH)
0.8
0.6
-40 -20
0
V
0.1
10
Transfer Characteristics
VGS-Gate Source Voltage (Volts)
D
ZVN2110
ZVP2110G
VDS - Drain Source Voltage (Volts)
2.4
1
S
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State
Resistance (1)
RDS(on)
VGS-Gate Source Voltage (Volts)
Normalised RDS(on) and VGS(th)
RDS(on)-Drain Source Resistance (Ω)
6
2.4
Voltage Saturation Characteristics
1
4
2.8
VGS-Gate Source Voltage (Volts)
10
D
4V
Output Characteristics
8
ISSUE 3 – OCTOBER 1995
✪
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
ABSOLUTE MAXIMUM RATINGS.
0.8
VDS - Drain Source Voltage (Volts)
10
VGS=
10V
9V
8V
7V
6V
2.0
ZVN2110G
20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
1.5
2.4
V
ID=1mA, VDS= VGS
20
nA
VGS=± 20V, VDS=0V
1
100
µA
µA
VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
2
4
250
350
A
VDS=25V, VGS=10V
Ω
VGS=10V, ID=1A
mS
VDS=25V, ID=1A
Forward Transconductance (1)(2)
gfs
Input Capacitance (2)
Ciss
59
75
pF
Common Source Output
Capacitance (2)
Coss
16
25
pF
Reverse Transfer Capacitance (2)
Crss
4
8
pF
Turn-On Delay Time (2)(3)
td(on)
4
7
ns
Rise Time (2)(3)
tr
4
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
13
ns
Fall Time (2)(3)
tf
8
13
ns
VDS=25 V, VGS=0V, f=1MHz
VDD ≈25V, ID=1A
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER
SYMBOL
Diode Forward Voltage (1)
V SD
MIN. TYP. MAX. UNIT
0.82
V
I S=0.32A, V GS=0
CONDITIONS.
Reverse Recovery Time
T RR
112
ns
I F=0.32A, V GS=0, I R=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 388
3 - 387
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN2110G
VGS=
10V
9V
2.0
1.6
ID(on) -On-State Drain Current (Amps)
ID(on) -On-State Drain Current (Amps)
TYPICAL CHARACTERISTICS
8V
7V
1.2
6V
0.8
5V
4V
0.4
3V
0
0
20
40
60
80
100
1.6
1.2
5V
4
ID=
1A
2
500mA
100mA
0
0
2
4
6
8
10
ID(on) -On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
6
0.4
3V
0
2
8
10
5
ID=
1A
500mA
100mA
10
PARTMARKING DETAIL COMPLEMENTARY TYPE -
100
On-resistance v gate-source voltage
G
PARAMETER
SYMBOL
Drain-Source Voltage
V DS
VALUE
100
UNIT
V
Continuous Drain Current at T amb=25°C
ID
500
mA
Pulsed Drain Current
I DM
6
A
Saturation Characteristics
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
Operating and Storage Temperature Range
T j:T stg
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VDS=25V
2.0
VDS=10V
1.6
1.2
0.8
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
CONDITIONS.
Drain-Source Breakdown Voltage
BVDSS
100
ID=1mA, VGS=0V
Gate-Source Threshold Voltage
VGS(th)
0.8
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
0.4
0
0
2
4
6
8
2.2
n)
(o
DS
2.0
1.8
1.6
rc
ou
-S
ain
Dr
1.4
1.2
1.0
eR
nc
ta
sis
e
eR
VGS=10V
ID=1 A
VGS=VDS
ID=1mA
Gate Threshold Voltage VGS(TH)
0.8
0.6
-40 -20
0
V
0.1
10
Transfer Characteristics
VGS-Gate Source Voltage (Volts)
D
ZVN2110
ZVP2110G
VDS - Drain Source Voltage (Volts)
2.4
1
S
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State
Resistance (1)
RDS(on)
VGS-Gate Source Voltage (Volts)
Normalised RDS(on) and VGS(th)
RDS(on)-Drain Source Resistance (Ω)
6
2.4
Voltage Saturation Characteristics
1
4
2.8
VGS-Gate Source Voltage (Volts)
10
D
4V
Output Characteristics
8
ISSUE 3 – OCTOBER 1995
✪
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
ABSOLUTE MAXIMUM RATINGS.
0.8
VDS - Drain Source Voltage (Volts)
10
VGS=
10V
9V
8V
7V
6V
2.0
ZVN2110G
20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
1.5
2.4
V
ID=1mA, VDS= VGS
20
nA
VGS=± 20V, VDS=0V
1
100
µA
µA
VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
2
4
250
350
A
VDS=25V, VGS=10V
Ω
VGS=10V, ID=1A
mS
VDS=25V, ID=1A
Forward Transconductance (1)(2)
gfs
Input Capacitance (2)
Ciss
59
75
pF
Common Source Output
Capacitance (2)
Coss
16
25
pF
Reverse Transfer Capacitance (2)
Crss
4
8
pF
Turn-On Delay Time (2)(3)
td(on)
4
7
ns
Rise Time (2)(3)
tr
4
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
13
ns
Fall Time (2)(3)
tf
8
13
ns
VDS=25 V, VGS=0V, f=1MHz
VDD ≈25V, ID=1A
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER
SYMBOL
Diode Forward Voltage (1)
V SD
MIN. TYP. MAX. UNIT
0.82
V
I S=0.32A, V GS=0
CONDITIONS.
Reverse Recovery Time
T RR
112
ns
I F=0.32A, V GS=0, I R=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 388
3 - 387
ZVN2110G
TYPICAL CHARACTERISTICS
500
gfs-Transconductance (mS)
gfs-Transconductance (mS)
500
400
300
VDS=25V
200
100
0
0
0.2
0.4
0.6
0.8
400
300
VDS=25V
200
100
0
1.0
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
ID(on)- Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
C-Capacitance (pF)
80
60
Ciss
40
20
Coss
Crss
0
10
20
30
40
50
VGS-Gate Source Voltage (Volts)
16
100
14
ID=1A
12
VDS=
20V
50V
80V
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Q-Charge (nC)
VDS-Drain Source Voltage (Volts)
Gate charge v gate-source voltage
Capacitance v drain-source voltage
3 - 389