N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5Ω TYPICAL CHARACTERISTICS VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) VGS=10V 9V 1.0 8V 0.8 7V 0.6 6V 0.4 5V 0.2 4V 3V 0 0 2 4 6 8 10 10 8 D G 6 ID= 1A ABSOLUTE MAXIMUM RATINGS. 2 0.5A 0.25A 0 0 2 0.8 0.6 0.4 0.2 0 2 4 6 8 10 gfs-Forward Transconductance (mS) Normalised RDS(on) and VGS(th) 1.8 1.6 1.4 1.2 Dr n) (o DS eR nc ta sis e eR rc ou -S n ai 1.0 0.8 0.6 0.4 -80 -60 -40 -20 Gate Thresh old Voltage VGS (th ) 0 20 40 60 80 100 120 140 160 5 ID= 1A 0.5A 0.25A 1 1 10 20 Normalised RDS(on) and VGS(th) vs Temperature 3-376 SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 270 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 160 VDS=18V V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 0.5 50 µA µA V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=18V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=500mA mS V DS=18V,I D=500mA 750 5 150 Input Capacitance (2) C iss 35 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) t d(on) 5 ns 140 120 100 MAX. UNIT CONDITIONS. Gate-Body Leakage Forward Transconductance(1)(2 g fs ) 200 180 V DS=18V, V GS=0V, f=1MHz 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID(on) - Drain Current (Amps) T-Temperature (C°) PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). On-resistance vs gate-source voltage 2.4 ID=-0.5A 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics 2.0 8 10 VGS-Gate Source Voltage (Volts) 2.2 6 Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) ID(On) -On-State Drain Current (Amps) Saturation Characteristics 0 4 VGS -Gate Source Voltage (Volts) VDS=10V S E-Line TO92 Compatible 4 VDS - Drain Source Voltage (Volts) 1.0 ZVN3306A Transconductance v drain current Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 6 ns Fall Time (2)(3) tf 8 ns V DD ≈18V, I D=500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% 3-375 2) Sample test. ( N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5Ω TYPICAL CHARACTERISTICS VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) VGS=10V 9V 1.0 8V 0.8 7V 0.6 6V 0.4 5V 0.2 4V 3V 0 0 2 4 6 8 10 10 8 D G 6 ID= 1A ABSOLUTE MAXIMUM RATINGS. 2 0.5A 0.25A 0 0 2 0.8 0.6 0.4 0.2 0 2 4 6 8 10 gfs-Forward Transconductance (mS) Normalised RDS(on) and VGS(th) 1.8 1.6 1.4 1.2 Dr n) (o DS eR nc ta sis e eR rc ou -S n ai 1.0 0.8 0.6 0.4 -80 -60 -40 -20 Gate Thresh old Voltage VGS (th ) 0 20 40 60 80 100 120 140 160 5 ID= 1A 0.5A 0.25A 1 1 10 20 Normalised RDS(on) and VGS(th) vs Temperature 3-376 SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 270 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 160 VDS=18V V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 0.5 50 µA µA V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=18V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=500mA mS V DS=18V,I D=500mA 750 5 150 Input Capacitance (2) C iss 35 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) t d(on) 5 ns 140 120 100 MAX. UNIT CONDITIONS. Gate-Body Leakage Forward Transconductance(1)(2 g fs ) 200 180 V DS=18V, V GS=0V, f=1MHz 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID(on) - Drain Current (Amps) T-Temperature (C°) PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). On-resistance vs gate-source voltage 2.4 ID=-0.5A 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics 2.0 8 10 VGS-Gate Source Voltage (Volts) 2.2 6 Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) ID(On) -On-State Drain Current (Amps) Saturation Characteristics 0 4 VGS -Gate Source Voltage (Volts) VDS=10V S E-Line TO92 Compatible 4 VDS - Drain Source Voltage (Volts) 1.0 ZVN3306A Transconductance v drain current Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 6 ns Fall Time (2)(3) tf 8 ns V DD ≈18V, I D=500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% 3-375 2) Sample test. ( ZVN3306A 200 50 180 160 140 40 120 C-Capacitance (pF) gfs-Transconductance (mS) TYPICAL CHARACTERISTICS VDS=18V 100 80 60 40 Ciss 20 10 Coss Crss 20 0 0 0 1 2 3 4 5 6 7 8 9 0 10 VGS-Gate Source Voltage (Volts) 20 30 40 Capacitance v drain-source voltage VDD=20V 30V 50V 16 14 10 VDS-Drain Source Voltage (Volts) Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 30 ID=800mA 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) Gate charge v gate-source voltage 3-377 50