N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206C ISSUE 2 JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 Ω G D S E-LINE TO92 COMPATIBLE REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 60 UNIT V Continuous Drain Current at Tamb=25°C ID 600 mA Pulsed Drain Current IDM 8 A Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 0.7 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V IDSS 10 100 µA µA VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) Forward Transconductance(1)(2gfs ) 3 1 1.5 300 A VDS=25V, VGS=10V Ω Ω VGS=10V,ID=1.5A VGS=5V,ID=500mA mS VDS=25V,ID=1.5A Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance Crss (2) 20 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns 3-387 VDS=25V, VGS=0V, f=1MHz VDD ≈ 25V, ID=1.5A (