SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123 ✪ ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL – SA S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C ID 170 mA Pulsed Drain Current IDM 680 mA Gate-Source Voltage VGS ± 20 V Peak Gate-Source Voltage VGSM ± 20 V Power Dissipation at Tamb=25°C Ptot 360 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. BVDSS 100 MIN. MAX. UNIT CONDITIONS. V ID=0.25mA, VGS=0V VGS(th) 2.2 2.8 V ID=1mA, VDS= VGS IGSS IDSS 10 1 2 50 15 60 10 nA VGS=± 20V, VDS=0V VDS=100V, VGS=0V VDS=100V, VGS=0V, T=125°C(2) VDS=20V, VGS=0V Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) RDS(on) 5 6 gfs 0.8 80 120 µA µA nA Ω mS Ciss Coss 20 9 pF pF Crss 4 pF td(on) tr td(off) tf 10 10 15 25 ns ns ns ns VGS=10V, ID=100mA VDS=25V, ID=100mA VDS=25V, VGS=0V, f=1MHz VDD ≈30V, ID=280mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator For typical characteristics graphs see ZVN3310F datasheet. 3 - 70