DIODES ZVN4310G

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4310G
ISSUE 3 - FEBRUARY 1996
FEATURES
* Very low RDS(ON) = .54Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
ID - Drain Current (Amps)
10
9
RDS(on)-Drain Source On Resistance (Ω)
TYPICAL CHARACTERISTICS
VGS=
20V 10V
12V 9V 8V
7V
8
7
6V
6
5
5V
4
3
2
4V
1
3V
0
0
1
2
3
4
5
6
7
8
9
10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
4V
VGS=3V
5V 6V 8V10V
10
PARTMARKING DETAIL -
2.0
1.8
1.6
1.4
1.2
Dr
1.0
e
rc
ou
-S
n
ai
ist
Gate
Thre
0.8
0.6
s
Re
ce
an
gfs-Transconductance (S)
Normalised RDS(on) and VGS(th)
)
on
S(
VGS=10V
ID=3.3A
VGS=VDS
ID=1mA
shold
Volta
ge V
GS(TH
)
-50 -25
0
100
10
1
ID-Drain Current (Amps)
4
VDS=10V
2
1
0
0
2
6
4
8
10
12
14
300
Ciss
100
0
10
20
30
40
Coss
Crss
50
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
400
0
18
20
Transconductance v drain current
VDD=
10V
20V
50V
100V
16
200
16
ID(on)- Drain Current (Amps)
Tj-Junction Temperature (°C)
500
VDS-Drain Source Voltage (Volts)
14
ID=3A
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11 12
Q-Charge (nC)
Capacitance v drain-source voltage
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
100
V
Continuous Drain Current at Tamb=25°C
ID
1.67
A
Pulsed Drain Current
IDM
12
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
3
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
3
25 50 75 100 125 150 175 200 225
Normalised RDS(on) and VGS(th) v Temperature
D
ABSOLUTE MAXIMUM RATINGS.
0.1
0.1
5
RD
ZVN4310
G
2.6
2.2
D
S
1.0
On-resistance v drain current
2.4
ZVN4310G
Gate charge v gate-source voltage
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
SYMBOL MIN.
100
BVDSS
VGS(th)
TYP.
1
IGSS
IDSS
On-State Drain
ID(on)
Current(1)
Static Drain-Source
RDS(on)
On-State Resistance (1)
9
Forward
Transconductance (1)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
0.6
gfs
0.4
0.5
MAX.
UNIT CONDITIONS.
V
ID=1mA, VGS=0V
3
V
ID=1mA, VDS= VGS
20
10
100
nA
VGS=± 20V, VDS=0V
VDS=100V, VGS=0V
VDS=80V, VGS=0V, T=125°C(2)
0.54
0.75
µA
µA
A
VDS=25V, VGS=10V
Ω
Ω
S
VDS=25V,ID=3.3A
VDS=25 V, VGS=0V, f=1MHz
Ciss
Coss
350
140
pF
pF
Crss
20
pF
td(on)
8
ns
tr
td(off)
25
30
ns
ns
tf
16
ns
VGS=10V, ID=3.3A
VGS=5V, ID=1.5A
VDD ≈25V, VGEN=10V, ID=3A
RGS =50Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 414
3 - 413
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4310G
ISSUE 3 - FEBRUARY 1996
FEATURES
* Very low RDS(ON) = .54Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
ID - Drain Current (Amps)
10
9
RDS(on)-Drain Source On Resistance (Ω)
TYPICAL CHARACTERISTICS
VGS=
20V 10V
12V 9V 8V
7V
8
7
6V
6
5
5V
4
3
2
4V
1
3V
0
0
1
2
3
4
5
6
7
8
9
10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
4V
VGS=3V
5V 6V 8V10V
10
PARTMARKING DETAIL -
2.0
1.8
1.6
1.4
1.2
Dr
1.0
e
rc
ou
-S
n
ai
ist
Gate
Thre
0.8
0.6
s
Re
ce
an
gfs-Transconductance (S)
Normalised RDS(on) and VGS(th)
)
on
S(
VGS=10V
ID=3.3A
VGS=VDS
ID=1mA
shold
Volta
ge V
GS(TH
)
-50 -25
0
100
10
1
ID-Drain Current (Amps)
4
VDS=10V
2
1
0
0
2
6
4
8
10
12
14
300
Ciss
100
0
10
20
30
40
Coss
Crss
50
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
400
0
18
20
Transconductance v drain current
VDD=
10V
20V
50V
100V
16
200
16
ID(on)- Drain Current (Amps)
Tj-Junction Temperature (°C)
500
VDS-Drain Source Voltage (Volts)
14
ID=3A
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11 12
Q-Charge (nC)
Capacitance v drain-source voltage
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
100
V
Continuous Drain Current at Tamb=25°C
ID
1.67
A
Pulsed Drain Current
IDM
12
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
3
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
3
25 50 75 100 125 150 175 200 225
Normalised RDS(on) and VGS(th) v Temperature
D
ABSOLUTE MAXIMUM RATINGS.
0.1
0.1
5
RD
ZVN4310
G
2.6
2.2
D
S
1.0
On-resistance v drain current
2.4
ZVN4310G
Gate charge v gate-source voltage
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
SYMBOL MIN.
100
BVDSS
VGS(th)
TYP.
1
IGSS
IDSS
On-State Drain
ID(on)
Current(1)
Static Drain-Source
RDS(on)
On-State Resistance (1)
9
Forward
Transconductance (1)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
0.6
gfs
0.4
0.5
MAX.
UNIT CONDITIONS.
V
ID=1mA, VGS=0V
3
V
ID=1mA, VDS= VGS
20
10
100
nA
VGS=± 20V, VDS=0V
VDS=100V, VGS=0V
VDS=80V, VGS=0V, T=125°C(2)
0.54
0.75
µA
µA
A
VDS=25V, VGS=10V
Ω
Ω
S
VDS=25V,ID=3.3A
VDS=25 V, VGS=0V, f=1MHz
Ciss
Coss
350
140
pF
pF
Crss
20
pF
td(on)
8
ns
tr
td(off)
25
30
ns
ns
tf
16
ns
VGS=10V, ID=3.3A
VGS=5V, ID=1.5A
VDD ≈25V, VGEN=10V, ID=3A
RGS =50Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 414
3 - 413