SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310G ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS(ON) = .54Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive ID - Drain Current (Amps) 10 9 RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS VGS= 20V 10V 12V 9V 8V 7V 8 7 6V 6 5 5V 4 3 2 4V 1 3V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) Saturation Characteristics 4V VGS=3V 5V 6V 8V10V 10 PARTMARKING DETAIL - 2.0 1.8 1.6 1.4 1.2 Dr 1.0 e rc ou -S n ai ist Gate Thre 0.8 0.6 s Re ce an gfs-Transconductance (S) Normalised RDS(on) and VGS(th) ) on S( VGS=10V ID=3.3A VGS=VDS ID=1mA shold Volta ge V GS(TH ) -50 -25 0 100 10 1 ID-Drain Current (Amps) 4 VDS=10V 2 1 0 0 2 6 4 8 10 12 14 300 Ciss 100 0 10 20 30 40 Coss Crss 50 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 400 0 18 20 Transconductance v drain current VDD= 10V 20V 50V 100V 16 200 16 ID(on)- Drain Current (Amps) Tj-Junction Temperature (°C) 500 VDS-Drain Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 1.67 A Pulsed Drain Current IDM 12 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 3 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 3 25 50 75 100 125 150 175 200 225 Normalised RDS(on) and VGS(th) v Temperature D ABSOLUTE MAXIMUM RATINGS. 0.1 0.1 5 RD ZVN4310 G 2.6 2.2 D S 1.0 On-resistance v drain current 2.4 ZVN4310G Gate charge v gate-source voltage PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 100 BVDSS VGS(th) TYP. 1 IGSS IDSS On-State Drain ID(on) Current(1) Static Drain-Source RDS(on) On-State Resistance (1) 9 Forward Transconductance (1) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) 0.6 gfs 0.4 0.5 MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS 20 10 100 nA VGS=± 20V, VDS=0V VDS=100V, VGS=0V VDS=80V, VGS=0V, T=125°C(2) 0.54 0.75 µA µA A VDS=25V, VGS=10V Ω Ω S VDS=25V,ID=3.3A VDS=25 V, VGS=0V, f=1MHz Ciss Coss 350 140 pF pF Crss 20 pF td(on) 8 ns tr td(off) 25 30 ns ns tf 16 ns VGS=10V, ID=3.3A VGS=5V, ID=1.5A VDD ≈25V, VGEN=10V, ID=3A RGS =50Ω (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 414 3 - 413 SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310G ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS(ON) = .54Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive ID - Drain Current (Amps) 10 9 RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS VGS= 20V 10V 12V 9V 8V 7V 8 7 6V 6 5 5V 4 3 2 4V 1 3V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) Saturation Characteristics 4V VGS=3V 5V 6V 8V10V 10 PARTMARKING DETAIL - 2.0 1.8 1.6 1.4 1.2 Dr 1.0 e rc ou -S n ai ist Gate Thre 0.8 0.6 s Re ce an gfs-Transconductance (S) Normalised RDS(on) and VGS(th) ) on S( VGS=10V ID=3.3A VGS=VDS ID=1mA shold Volta ge V GS(TH ) -50 -25 0 100 10 1 ID-Drain Current (Amps) 4 VDS=10V 2 1 0 0 2 6 4 8 10 12 14 300 Ciss 100 0 10 20 30 40 Coss Crss 50 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 400 0 18 20 Transconductance v drain current VDD= 10V 20V 50V 100V 16 200 16 ID(on)- Drain Current (Amps) Tj-Junction Temperature (°C) 500 VDS-Drain Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 1.67 A Pulsed Drain Current IDM 12 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 3 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 3 25 50 75 100 125 150 175 200 225 Normalised RDS(on) and VGS(th) v Temperature D ABSOLUTE MAXIMUM RATINGS. 0.1 0.1 5 RD ZVN4310 G 2.6 2.2 D S 1.0 On-resistance v drain current 2.4 ZVN4310G Gate charge v gate-source voltage PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 100 BVDSS VGS(th) TYP. 1 IGSS IDSS On-State Drain ID(on) Current(1) Static Drain-Source RDS(on) On-State Resistance (1) 9 Forward Transconductance (1) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) 0.6 gfs 0.4 0.5 MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS 20 10 100 nA VGS=± 20V, VDS=0V VDS=100V, VGS=0V VDS=80V, VGS=0V, T=125°C(2) 0.54 0.75 µA µA A VDS=25V, VGS=10V Ω Ω S VDS=25V,ID=3.3A VDS=25 V, VGS=0V, f=1MHz Ciss Coss 350 140 pF pF Crss 20 pF td(on) 8 ns tr td(off) 25 30 ns ns tf 16 ns VGS=10V, ID=3.3A VGS=5V, ID=1.5A VDD ≈25V, VGEN=10V, ID=3A RGS =50Ω (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 414 3 - 413