DIODES ZVNL120G

SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - JANUARY 1996
FEATURES
* VDS - 200V
* RDS(ON) - 10Ω
ZVNL120G
✪
D
S
PARTMARKING DETAIL - ZVNL120
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
200
V
Continuous Drain Current at T amb=25°C
ID
320
mA
Pulsed Drain Current
I DM
2
A
Gate-Source Voltage
V GS
± 20
V
Power Dissipation at T amb=25°C
P tot
2
W
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BV DSS
200
Gate-Source Threshold Voltage V GS(th)
0.5
MAX. UNIT CONDITIONS.
V
I D=1mA, V GS=0V
1.5
V
I D =1mA, V DS= V GS
Gate-Body Leakage
I GSS
100
nA
V GS=± 20V, V DS=0V
Zero Gate Voltage Drain
Current
I DSS
10
100
µA
µA
V DS=200V, V GS=0V
V DS=160V, V GS=0V,
T=125°C (2)
On-State Drain Current(1)
I D(on)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance(1)(2) g fs
500
10
10
200
mA
V DS=25V, V GS=5V
Ω
Ω
V GS=5V, I D=250mA
V GS=3V, I D=125mA
mS
V DS=25V, I D=250mA
Input Capacitance (2)
C iss
85
pF
Common Source Output
Capacitance (2)
C oss
20
pF
Reverse Transfer Capacitance (2) Crss
7
pF
Turn-On Delay Time (2)(3)
t d(on)
8
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
t d(off)
20
ns
Fall Time (2)(3)
tf
12
ns
V DS=25V, V GS=0V, f=1MHz
V DD≈25V, I D=250mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 420
ZVNL120G
ZVNL120G
TYPICAL CHARACTERISTICS
1.2
5V
1.0
0.8
4V
0.6
0.4
3V
0.2
2V
0
0.8
4V
0.6
0.4
3V
0.2
2V
0
0
5
10
15
20
25
30
35
40
45
50
0
VDS - Drain Source Voltage (Volts)
2
4
6
8
10
RDS(on)-Drain Source On Resistance (Ω)
ID(On)Drain Current (Amps)
ID(On) Drain Current (Amps)
1.4
VGS=
10V
8V
6V
1.0
16
VGS-Gate Source Voltage (Volts)
VGS=
10V
8V
6V
1.6
TYPICAL CHARACTERISTICS
VDS=
50V
14
ID= 700mA
12
100V
10
150V
8
6
4
2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
VDS - Drain Source Voltage (Volts)
Q-Charge (nC)
Saturation Characteristics
20V
1.2
1.0
10V
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
500
gfs-Transconductance (mS)
ID(On) Drain Current (Amps)
1.4
400
300
200
100
0
10
1
2
3
4
5
6
7
8
9
10
Transconductance v gate-source voltage
Transfer Characteristics
500
100
ID=
1A
0.5A
0.1A
10
1
1
10
20
300
200
100
C-Capacitance (pF)
VDS=25V
On-resistance vs gate-source voltage
80
60
Ciss
40
20
Coss
Crss
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
10
20
30
40
50
VDS-Drain Source Voltage (Volts)
ID- Drain Current (Amps)
Capacitance v drain-source voltage
Transconductance v drain current
3 - 421
5V
10V
1
10
1000
100
ID-Drain Current (mA)
2.2
VGS=5V
ID=250mA
2.0
1.8
1.6
e
rc
ou
-S
in
a
Dr
1.4
1.2
Re
e
nc
ta
sis
)
on
S(
RD
VGS=3V
ID=125mA
VGS=VDS
ID=1mA
Gate Th
reshold
Voltage
VGS(th)
1.0
0.8
0.6
0.4
-80 -60 -40 -20
0
20 40 60 80 100 120 140 160
Tj-Junction Temperature (C°)
100
400
4V
2.4
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
gfs-Transconductance (mS)
VDS=25V
3V
On-resistance v drain current
Normalised RDS(on) and VGS(th)
VDS=
40V
1.6
VGS=2V
10
Gate charge v gate-source voltage
RDS(ON) -Drain Source Resistance (Ω)
Output Characteristics
100
3 - 422
Normalised RDS(on) and VGS(th) vs Temperature
ZVNL120G
ZVNL120G
TYPICAL CHARACTERISTICS
1.2
5V
1.0
0.8
4V
0.6
0.4
3V
0.2
2V
0
0.8
4V
0.6
0.4
3V
0.2
2V
0
0
5
10
15
20
25
30
35
40
45
50
0
VDS - Drain Source Voltage (Volts)
2
4
6
8
10
RDS(on)-Drain Source On Resistance (Ω)
ID(On)Drain Current (Amps)
ID(On) Drain Current (Amps)
1.4
VGS=
10V
8V
6V
1.0
16
VGS-Gate Source Voltage (Volts)
VGS=
10V
8V
6V
1.6
TYPICAL CHARACTERISTICS
VDS=
50V
14
ID= 700mA
12
100V
10
150V
8
6
4
2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
VDS - Drain Source Voltage (Volts)
Q-Charge (nC)
Saturation Characteristics
20V
1.2
1.0
10V
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
500
gfs-Transconductance (mS)
ID(On) Drain Current (Amps)
1.4
400
300
200
100
0
10
1
2
3
4
5
6
7
8
9
10
Transconductance v gate-source voltage
Transfer Characteristics
500
100
ID=
1A
0.5A
0.1A
10
1
1
10
20
300
200
100
C-Capacitance (pF)
VDS=25V
On-resistance vs gate-source voltage
80
60
Ciss
40
20
Coss
Crss
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
10
20
30
40
50
VDS-Drain Source Voltage (Volts)
ID- Drain Current (Amps)
Capacitance v drain-source voltage
Transconductance v drain current
3 - 421
5V
10V
1
10
1000
100
ID-Drain Current (mA)
2.2
VGS=5V
ID=250mA
2.0
1.8
1.6
e
rc
ou
-S
in
a
Dr
1.4
1.2
Re
e
nc
ta
sis
)
on
S(
RD
VGS=3V
ID=125mA
VGS=VDS
ID=1mA
Gate Th
reshold
Voltage
VGS(th)
1.0
0.8
0.6
0.4
-80 -60 -40 -20
0
20 40 60 80 100 120 140 160
Tj-Junction Temperature (C°)
100
400
4V
2.4
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
gfs-Transconductance (mS)
VDS=25V
3V
On-resistance v drain current
Normalised RDS(on) and VGS(th)
VDS=
40V
1.6
VGS=2V
10
Gate charge v gate-source voltage
RDS(ON) -Drain Source Resistance (Ω)
Output Characteristics
100
3 - 422
Normalised RDS(on) and VGS(th) vs Temperature