ZETEX ZX5T849G

ZX5T849G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 30V : RSAT = 28m ; IC = 7A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 30V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
• Extemely low equivalent on-resistance; RSAT = 28m at 6.5A
SOT223
• 7 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T849GTA
7”
13"
12mm
embossed
1000 units
ZX5T849GTC
4000 units
DEVICE MARKING
• X5T849
TOP VIEW
ISSUE 1 - NOVEMBER 2003
1
SEMICONDUCTORS
ZX5T849G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
80
Collector-emitter voltage
BV CEO
30
V
Emitter-base voltage
BV EBO
7
V
Continuous collector current (a)
IC
7
A
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
42
°C/W
Junction to ambient (b)
R ⍜JA
78
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
2
ZX5T849G
CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
3
SEMICONDUCTORS
ZX5T849G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
80
125
MAX. UNIT CONDITIONS
V
I C =100␮A
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CER
80
125
V
Collector-emitter breakdown voltage
BV CEO
30
40
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
Collector cut-off current
20
nA
V CB =70V
0.5
␮A
VCB=70V, Tamb=100⬚C
I CER
20
nA
V CB =70V
Rⱕ1k⍀
0.5
␮A
VCB=70V, Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
10
nA
25
35
mV
I C =0.5A, I B =20mA*
35
50
mV
IC=1A, IB=100mA*
50
65
mV
IC=1A, IB=20mA*
100
125
mV
IC=2A, IB=20mA*
IC=6.5A, IB=300mA*
185
220
mV
Base-emitter saturation voltage
V BE(SAT)
1025
1130
mV
I C =6.5A, I B =300mA*
Base-emitter turn-on voltage
V BE(ON)
920
1000
mV
I C =6.5A, V CE =1V*
Static forward current transfer ratio
h FE
100
175
100
200
100
150
IC=7A, VCE=1V*
20
30
IC=20A, VCE=1V*
140
I C =10mA, V CE =1V*
IC=1A, VCE=1V*
300
MHz IC =100mA, VCE =10V
Transition frequency
fT
Output capacitance
C OBO
48
pF
V CB =10V, f=1MHz*
Switching times
t ON
37
ns
t OFF
425
I C =1A, V CC =10V,
I B1 =-I B2 =100mA
f=50MHz
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
4
ZX5T849G
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
5
SEMICONDUCTORS
ZX5T849G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex plc 2003
Americas
Asia Pacific
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
6