ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold D2 • Low gate drive D1 • Low profile SOIC package G2 APPLICATIONS • DC - DC converters G1 S2 • Power management functions S1 • Disconnect switches • Motor control Pin-out ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL 7 12 embossed 1,000 ZXM63N03NXTA ZXM63N03NXTC 13 12 embossed S1 G1 1 D1 D1 S2 D2 G2 D2 4,000 Top view DEVICE MARKING ZXM63N03 ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXMD63N03X ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate- Source Voltage V GS ±20 V (V GS =4.5V; T A =25°C)(b)(d) I D (V GS =4.5V; T A =70°C)(b)(d) Pulsed Drain Current (c)(d) I DM Continuous Source Current (Body Diode)(b)(d) IS 2.3 1.8 A 14 A 1.5 A Continuous Drain Current I SM 14 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C Pulsed Source Current (Body Diode)(c)(d) THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 143 °C/W Junction to Ambient (b)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 120 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 1 - OCTOBER 2005 2 SEMICONDUCTORS ZXMD63N03X CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 SEMICONDUCTORS ZXMD63N03X ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS 30 TYP. MAX. UNIT CONDITIONS V I D =250µA, V GS =0V V DS =30V, V GS =0V STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current I DSS 1 µA Gate-Body Leakage I GSS 100 nA Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 1.0 0.135 0.200 1.9 V GS =⫾20V, V DS =0V V I =250µA, V DS = V GS Ω Ω V GS =10V, I D =1.7A V GS =4.5V, I D =0.85A S V DS =10V,I D =0.85A D DYNAMIC (3) Input Capacitance C iss 290 pF Output Capacitance C oss 70 pF Reverse Transfer Capacitance C rss 20 pF V DS =25 V, V GS =0V, f=1MHz SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.5 ns Rise Time tr 4.1 ns Turn-Off Delay Time t d(off) 9.6 ns Fall Time tf 4.4 Total Gate Charge Qg 8 nC Gate-Source Charge Q gs 1.2 nC Gate Drain Charge Q gd 2 nC V SD 0.95 V DD =15V, I D =1.7A R G =6.1Ω, R D =8.7Ω (Refer to test circuit) ns V DS =24V,V GS =10V, I D =1.7A (Refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage (1) V T j =25°C, I S =1.7A, V GS =0V T j =25°C, I F =1.7A, di/dt= 100A/µs Reverse Recovery Time (3) t rr 16.9 ns Reverse Recovery Charge(3) Q rr 9.5 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 4 SEMICONDUCTORS ZXMD63N03X TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 5 SEMICONDUCTORS ZXMD63N03X TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 6 SEMICONDUCTORS ZXMD63N03X PACKAGE DETAILS PAD LAYOUT DETAILS c e 1.02 0.040 E E1 4.8 0.189 R1 mm inches D L R A2 A 0.41 0.016 A1 b 0.65 0.023 PACKAGE DIMENSIONS DIM Millimeters MIN Inches MAX MIN MAX 0.044 0.91 A1 0.10 0.20 0.004 0.008 B 0.25 0.36 0.010 0.014 C 0.13 D 2.95 e 1.11 0.036 A 0.18 3.05 0.005 0.116 0.65NOM e1 0.007 0.120 0.0256 0.33NOM 0.0128 E 2.95 3.05 H 4.78 L 0.41 0.66 0.016 0.026 ° 0° 6° 0° 6° 5.03 0.116 0.120 0.188 0.198 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 7 1