ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025⍀; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035⍀; ID= -6.3A Description D1 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. G1 D2 G2 S1 Features Q1 N-Channel • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package S2 Q2 P-Channel S1 D1 G1 D1 S2 D2 G2 D2 Applications • Motor Drive • LCD backlighting SO8 Ordering information Device ZXMC3A18DN8TC Reel size (inches) Tape width (mm) Quantity per reel 13 12 2500 Device marking ZXMC 3A18 Issue 2 - September 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMC3A18DN8 Absolute maximum ratings Parameter Symbol N-channel P-channel Unit Drain-source voltage VDSS 30 -30 V Gate-source voltage VGS ±20 ±20 V ID 7.6 -6.3 A (VGS= 10V; Tamb=70°C)(b)(d) 6.1 -5.0 (VGS= 10V; Tamb=25°C)(a)(d) 5.8 -4.8 IDM 37 -30 A IS 3.6 3.2 A Pulsed source current (body diode)(c) ISM 37 30 A Power dissipation at Tamb =25°C(a)(d) PD Continuous drain current (VGS= 10V; Tamb=25°C)(b)(d) Pulsed drain current(c) Continuous source current (body diode)(b) 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C Tj, Tstg -55 to +150 °C Linear derating factor PD Power dissipation at Tamb =25°C(a)(e) Linear derating factor PD Power dissipation at Tamb =25°C(b)(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Value Unit ambient(a)(d) RJA 100 °C/W Junction to ambient(a)(e) RJA 70 °C/W Junction to ambient(b)(d) RJA 60 °C/W Junction to NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300s, d<= 0.02. Refer to transient thermal impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. Issue 2 - September 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXMC3A18DN8 Characteristics Issue 2 - September 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXMC3A18DN8 N-channel Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS 30 Typ. Max. Unit Conditions Static Drain-source breakdown voltage V ID= 250A, VGS=0V Zero gate voltage drain current IDSS 0.5 A VDS=30V, VGS=0V Gate-body leakage 100 nA VGS=±20V, VDS=0V IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) 1.0 RDS(on) 0.025 V ID= 250A, VDS=VGS VGS= 10V, ID= 5.8A VGS= 4.5V, ID= 5.3A 0.030 Forward transconductance(*)(‡) gfs 17.5 S VDS= 15V, ID= 5.8A VDS= 25V, VGS=0V f=1MHz Dynamic(‡) Input capacitance Ciss 1800 pF Output capacitance Coss 289 pF Reverse transfer capacitance Crss 178 pF Turn-on-delay time td(on) 5.5 ns Rise time tr 8.7 ns Turn-off delay time td(off) 33 ns Fall time tf 8.5 ns Gate charge Qg 19.4 nC VDS= 15V, VGS= 5V ID= 3.5A Total gate charge Qg 36 nC Gate-source charge Qgs 5.5 nC VDS= 15V, VGS= 10V ID= 3.5A Gate drain charge Qgd 7.0 nC Switching (†) (‡) VDD= 15V, ID= 6A RG ≅ 6.0, VGS= 10V Source-drain diode Diode forward voltage(*) VSD Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr 0.95 V Tj=25°C, IS= 6A, VGS=0V 20.5 ns 41.5 nC Tj=25°C, IS= 6A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 - September 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXMC3A18DN8 Typical characteristics Issue 2 - September 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXMC3A18DN8 Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 2 - September 2007 © Zetex Semiconductors plc 2007 Switching time test circuit 6 www.zetex.com ZXMC3A18DN8 P-channel Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS -30 Typ. Max. Unit Conditions Static Drain-source breakdown voltage V ID= -250A, VGS=0V Zero gate voltage drain current IDSS -1.0 A VDS= -30V, VGS=0V Gate-body leakage 100 nA VGS=±20V, VDS=0V IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) -1.0 RDS(on) 0.035 V ID= -250A, VDS=VGS W VGS= -10V, ID= -4.8A VGS= -4.5V, ID= -4.0A 0.050 Forward transconductance(*)(‡) gfs 8.6 S VDS= -15V, ID= -4.8A VDS= -15V, VGS=0V f=1MHz Dynamic(‡) Input capacitance Ciss 1603 pF Output capacitance Coss 434 pF Reverse transfer capacitance Crss 388 pF Turn-on-delay time td(on) 4.8 ns Rise time tr 9.5 ns Turn-off delay time td(off) 60 ns Fall time tf 38 ns Gate charge Qg 25 nC VDS= -15V, VGS= -5V ID= -4.8A Total gate charge Qg 45 nC Gate-source charge Qgs 5.1 nC VDS= -15V, VGS= -10V ID= -4.8A Gate drain charge Qgd 11.5 nC Diode forward voltage(*) VSD 0.82 Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr Switching (†) (‡) VDD= -15V, ID= -1A RG @ 6.0, VGS= 10V Source-drain diode -0.95 V Tj=25°C, IS= -3.7 VGS=0V 32.5 ns 18.4 nC Tj=25°C, IS= -2.2, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 - September 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXMC3A18DN8 Typical characteristics Issue 2 - September 2007 © Zetex Semiconductors plc 2007 8 www.zetex.com ZXMC3A18DN8 Typical characteristics Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms Issue 2 - September 2007 © Zetex Semiconductors plc 2007 Pulse width 1S Duty factor 0.1% td(on) Switching time test circuit 9 www.zetex.com ZXMC3A18DN8 Intentionally left blank Issue 2 - September 2007 © Zetex Semiconductors plc 2007 10 www.zetex.com ZXMC3A18DN8 Package outline - SO8 DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 2 - September 2007 © Zetex Semiconductors plc 2007 11 www.zetex.com ZXMC3A18DN8 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 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Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermannpark Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] © 2007 Published by Zetex Semiconductors plc Issue 2 - September 2007 © Zetex Semiconductors plc 2007 12 www.zetex.com