ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor drive • LCD backlighting ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMC4A16DN8TA 7” 12mm 500 ZXMC4A16DN8TC 13” 12mm 2,500 PINOUT DEVICE MARKING • ZXMC 4A16 TOP VIEW ISSUE 1 - NOVEMBER 2004 1 SEMICONDUCTORS ZXMC4A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-channel P-channe| UNIT Drain-source voltage V DSS 40 -40 V Gate-source voltage V GS ⫾20 ⫾20 V Continuous drain current ID (V GS = 10V; T A =25°C) (b)(d) 5.2 -4.7 A (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) 4.1 -3.8 A 4.0 -3.6 A I DM 24 -23 A Pulsed drain current (c) (b) IS 2.5 2.3 A Pulsed source current (body diode) (c) I SM 24 23 A Power dissipation at T A =25°C (a) (d) Linear derating factor PD Power dissipation at T A =25°C (a) (e) PD Continuous source current (body diode) Linear derating factor Power dissipation at T A =25°C (b) (d) PD Linear derating factor Operating and storage temperature range T j , T stg 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL (a) (d) Junction to ambient (a) (e) (b) (d) Junction to ambient Junction to ambient VALUE UNIT R ⍜JA 100 °C/W R ⍜JA 70 °C/W R ⍜JA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 2 ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 3 SEMICONDUCTORS ZXMC4A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS 40 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V I D = 250A, V GS =0V Zero Gate Voltage Drain Current I DSS 0.5 A V DS =40V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold Voltage Static Drain-Source On-State Resistance 1.0 V GS(th) (1) V R DS(on) 0.050 ⍀ V GS = 10V, I D = 4.5A V GS = 4.5V, I D = 3.2A 0.075 Forward Transconductance (1) (3) I D = 250mA, V DS =V GS g fs 8.6 S V DS = 15V, I D = 4.5A Input Capacitance Ciss 770 pF Output Capacitance Coss 92 pF Reverse Transfer Capacitance Crss 61 pF Turn-On-Delay Time td(on) 3.3 ns Rise Time tr 4.7 ns Turn-Off Delay Time td(off) 29 ns Fall Time tf 14 ns Total Gate Charge Qg 17 nC Gate-Source Charge Qgs 2.5 nC Gate Drain Charge Qgd 3.8 nC VSD 0.8 trr 20 ns T j =25°C, I S = 2.5A, Qrr 16 nC di/dt=100A/s DYNAMIC (3) SWITCHING V DS = 40V, V GS =0V f=1MHz (2) (3) V DD = 30V, I D = 1A R G ≅6.0⍀, V GS = 10V V DS = 30V, V GS = 10V I D = 4.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 0.95 V T j =25°C, I S = 4.5A, V GS =0V NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 4 ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 5 SEMICONDUCTORS ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 6 ZXMC4A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS -40 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V I D = -250A, V GS =0V Zero Gate Voltage Drain Current I DSS -1.0 A V DS = -40V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold Voltage Static Drain-Source On-State Resistance -1.0 V GS(th) (1) V R DS(on) 0.060 ⍀ VGS = -10V, ID = -3.8A V GS = -4.5V, ID = -2.9A 0.100 Forward Transconductance (1) (3) ID = -250A, VDS =VGS g fs 6.8 S Input Capacitance C iss 1000 pF Output Capacitance C oss 180 pF Reverse Transfer Capacitance C rss 160 pF Turn-On-Delay Time t d(on) 3.7 ns VDS = -15V, ID = -3.8A DYNAMIC (3) SWITCHING V DS = -20V, V GS =0V f=1MHz (2) (3) Rise Time tr 5.5 ns V DD = -20V, I D = -1A Turn-Off Delay Time t d(off) 33 ns R G ≅ 6.0⍀, V GS = 10V Fall Time tf 18 ns Gate Charge Qg 15 nC Total Gate Charge Qg 26 nC Gate-Source Charge Q gs 3.2 nC Gate Drain Charge Q gd 7.3 nC V SD -0.86 V DS = -20V, V GS = -5V I D = -3.8A VDS= -20V, VGS= -10V I D = -3.8A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T j =25°C, I S = -3.4A, V GS =0V T j =25°C, I S = -3A, di/dt=100A/s t rr 27 ns Q rr 25 nC NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - NOVEMBER 2004 7 SEMICONDUCTORS ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 8 ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 9 SEMICONDUCTORS ZXMC4A16DN8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.050 BSC © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 10 SCXXXX####DS#