DIODES ZXMC4A16DN8TC

ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A
P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilises a unique structure that combines the benefits
of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXMC4A16DN8TA
7”
12mm
500
ZXMC4A16DN8TC
13”
12mm
2,500
PINOUT
DEVICE MARKING
• ZXMC
4A16
TOP VIEW
ISSUE 1 - NOVEMBER 2004
1
SEMICONDUCTORS
ZXMC4A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-channel
P-channe|
UNIT
Drain-source voltage
V DSS
40
-40
V
Gate-source voltage
V GS
⫾20
⫾20
V
Continuous drain current
ID
(V GS = 10V; T A =25°C) (b)(d)
5.2
-4.7
A
(V GS = 10V; T A =70°C) (b)(d)
(V GS = 10V; T A =25°C) (a)(d)
4.1
-3.8
A
4.0
-3.6
A
I DM
24
-23
A
Pulsed drain current
(c)
(b)
IS
2.5
2.3
A
Pulsed source current (body diode) (c)
I SM
24
23
A
Power dissipation at T A =25°C (a) (d)
Linear derating factor
PD
Power dissipation at T A =25°C (a) (e)
PD
Continuous source current (body diode)
Linear derating factor
Power dissipation at T A =25°C (b) (d)
PD
Linear derating factor
Operating and storage temperature range
T j , T stg
1.25
W
10
mW/°C
1.8
W
14
mW/°C
2.1
W
17
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a) (d)
Junction to ambient (a) (e)
(b) (d)
Junction to ambient
Junction to ambient
VALUE
UNIT
R ⍜JA
100
°C/W
R ⍜JA
70
°C/W
R ⍜JA
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
2
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
3
SEMICONDUCTORS
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
40
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
I D = 250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
0.5
␮A
V DS =40V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
1.0
V GS(th)
(1)
V
R DS(on)
0.050
⍀
V GS = 10V, I D = 4.5A
V GS = 4.5V, I D = 3.2A
0.075
Forward Transconductance (1) (3)
I D = 250mA, V DS =V GS
g fs
8.6
S
V DS = 15V, I D = 4.5A
Input Capacitance
Ciss
770
pF
Output Capacitance
Coss
92
pF
Reverse Transfer Capacitance
Crss
61
pF
Turn-On-Delay Time
td(on)
3.3
ns
Rise Time
tr
4.7
ns
Turn-Off Delay Time
td(off)
29
ns
Fall Time
tf
14
ns
Total Gate Charge
Qg
17
nC
Gate-Source Charge
Qgs
2.5
nC
Gate Drain Charge
Qgd
3.8
nC
VSD
0.8
trr
20
ns
T j =25°C, I S = 2.5A,
Qrr
16
nC
di/dt=100A/␮s
DYNAMIC (3)
SWITCHING
V DS = 40V, V GS =0V
f=1MHz
(2) (3)
V DD = 30V, I D = 1A
R G ≅6.0⍀, V GS = 10V
V DS = 30V, V GS = 10V
I D = 4.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T j =25°C, I S = 4.5A,
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
4
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
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SEMICONDUCTORS
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
6
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
-40
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
I D = -250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
V DS = -40V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
-1.0
V GS(th)
(1)
V
R DS(on)
0.060
⍀
VGS = -10V, ID = -3.8A
V GS = -4.5V, ID = -2.9A
0.100
Forward Transconductance (1) (3)
ID = -250␮A, VDS =VGS
g fs
6.8
S
Input Capacitance
C iss
1000
pF
Output Capacitance
C oss
180
pF
Reverse Transfer Capacitance
C rss
160
pF
Turn-On-Delay Time
t d(on)
3.7
ns
VDS = -15V, ID = -3.8A
DYNAMIC (3)
SWITCHING
V DS = -20V, V GS =0V
f=1MHz
(2) (3)
Rise Time
tr
5.5
ns
V DD = -20V, I D = -1A
Turn-Off Delay Time
t d(off)
33
ns
R G ≅ 6.0⍀, V GS = 10V
Fall Time
tf
18
ns
Gate Charge
Qg
15
nC
Total Gate Charge
Qg
26
nC
Gate-Source Charge
Q gs
3.2
nC
Gate Drain Charge
Q gd
7.3
nC
V SD
-0.86
V DS = -20V, V GS = -5V
I D = -3.8A
VDS= -20V, VGS= -10V
I D = -3.8A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T j =25°C, I S = -3.4A,
V GS =0V
T j =25°C, I S = -3A,
di/dt=100A/␮s
t rr
27
ns
Q rr
25
nC
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
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SEMICONDUCTORS
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
8
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
9
SEMICONDUCTORS
ZXMC4A16DN8
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2004
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ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
10
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